Diodes-Incorporated-DMN90H8D5HCT
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NOT RECOMMENDED FOR NEW DESIGN –
NO ALTERNATE PART
DMN90H8D5HCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
Low Input Capacitance
Package
BV
DSS
R
DS(ON)
T
C
= +25°C
High BV
DSS
Rating for Power Application
TO220AB
(Type TH)
Low Input/Output Leakage
900V
2.5A
7
Ω
@V
GS
= 10V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
Case: TO220AB
Motor Control
Case Material: Molded Plastic
, “Green” Molding Compound
, UL
Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
Backlighting
DC-DC Converters
Power Management Functions
TO220AB (Type TH)
Top View
Pin Out Configuration
Bottom View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN90H8D5HCT
Case
TO220AB (Type TH)
Packaging
50 Pieces/Tube
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
=Manufacturer’s Marking
90H8D5H = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Two Digits of Year (ex: 20 = 2020)
WW or WW = Week Code (01 to 53)
90H8D5H
YYWW
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November 2020
© Diodes Incorporated
DMN90H8D5HCT
Document number: DS38117
Rev. 3 – 3
DMN90H8D5HCT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
900
Unit
V
Gate-Source Voltage
±30
V
V
GSS
T
C
= +25°C
T
C
= +100°C
Steady
2.5
1.5
A
Continuous Drain Current, V
GS
= 10V
State
I
D
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 60mH (Note 7)
Avalanche Energy, L = 60mH (Note 7)
Peak Diode Recovery dv/dt
3
A
A
I
S
I
DM
3
1.8
97
3.3
A
I
AS
mJ
V/ns
E
AS
dv/dt
Thermal Characteristics
Characteristic
Symbol
Value
125
50
Unit
T
C
= +25°C
Total Power Dissipation
W
P
D
T
C
= +100°C
50
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
R
JA
R
JC
°C/W
°C
1
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
900
V
BV
DSS
I
DSS
1
V
GS
= 0V, I
D
= 250µA
V
DS
= 900V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
µA
nA
100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
3.0
4
5.0
7
V
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1A
V
GS
= 0V, I
S
= 2A
Static Drain-Source On-Resistance
Diode Forward Voltage
5.5
0.84
1.2
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
470
45
C
iss
C
oss
C
rss
R
G
V
DS
= 25V, f = 1.0MHz,
V
GS
= 0V
Output Capacitance
pF
0.6
1.2
7.9
2.5
2.9
16
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
V
DD
= 720V, I
D
= 2A,
V
GS
= 10V
Gate-Source Charge
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
21
Turn-On Rise Time
V
DD
= 450V, R
G
= 25
, I
D
= 2A,
V
GS
= 10V
ns
17.6
17
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
375
2.9
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
dI/dt = 100A/
μ
s, V
DS
= 100V,
I
F
= 2A
µC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Guaranteed by design. Not subject to production testing.
8. Short duration pulse test used to minimize self-heating effect.
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November 2020
© Diodes Incorporated
DMN90H8D5HCT
Document number: DS38117
Rev. 3 – 3
DMN90H8D5HCT
1
0.8
0.6
0.4
0.2
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=15V
V
DS
= 10V
V
GS
=20V
V
GS
=10V
V
GS
=6.0V
125
℃
85
℃
V
GS
=5.5V
V
GS
=5.0V
150
℃
25
℃
-55
℃
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE( V)
Figure 1. Typical Output Characteristic
Figure 2.
Typical Transfer Characteristic
10
20
18
16
14
12
10
8
9
8
7
6
5
4
3
V
GS
=10V
I
D
=1A
6
4
2
0
0
5
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
15
20
25
30
0
0.5
1
1.5
2
2.5
3
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
3
20
18
16
14
12
10
8
V
GS
= 10V
150
℃
2.5
2
125
℃
85
℃
V
GS
=10V, I
D
=1A
1.5
1
25
℃
6
4
-55
℃
0.5
0
2
0
-50 -25
0
25
50
75
100 125 150
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT(A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
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November 2020
© Diodes Incorporated
DMN90H8D5HCT
Document number: DS38117
Rev. 3 – 3
DMN90H8D5HCT
8
7
6
5
4
3
2
1
0
20
18
16
14
12
10
8
I
D
=1mA
V
GS
=10V, I
D
=1A
I
D
=250µA
6
4
2
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
10000
4
3.5
3
f=1MHz
C
iss
1000
100
10
1
V
GS
=0V,
T
J
=85
℃
C
oss
2.5
2
V
GS
=0V,
T
J
=125
℃
1.5
1
V
GS
=0V,
C
rss
T
J
=25
℃
V
GS
=0V,
T
J
=150
℃
0.5
0
V
GS
=0V,
T
J
=-55
℃
0
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
10
8
R
DS(ON)
Limited
P
W
=100µs
P
W
=10µs P
W
=1µs
6
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
1
V
DS
=720V, I
D
=2A
4
T
J(Max)
=150
℃
T
C
=25
℃
Single Pulse
2
DUT on infinite heatsink
V
GS
=10V
0
0.1
0
1
2
3
4
5
6
7
8
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Qg (nC)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
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November 2020
© Diodes Incorporated
DMN90H8D5HCT
Document number: DS38117
Rev. 3 – 3
DMN90H8D5HCT
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JC
(t)=r(t) * R
θ
JC
R
θ
JC
=1
°C
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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November 2020
© Diodes Incorporated
DMN90H8D5HCT
Document number: DS38117
Rev. 3 – 3
DMN90H8D5HCT
Package Outline Dimensions
TO220AB (Type TH)
A
Eb
A1
TO220AB (Type TH)
Dim
A
A1
A2
b
b2
c
c1
D
D1
D2
D2a
e
e1
E
Ea
Eb
E2
E2a
E2b
H1
L
Min
4.27
1.12
2.39
0.70
1.17
0.30
0.38
Max
4.87
1.42
2.99
1.01
1.50
0.53
0.72
Typ
4.57
1.27
2.69
0.81
1.27
0.38
0.56
Q
H1
01
01
E
E2b
E2a
D
D2
D2a
D1
b2
A2
14.60 15.40 15.00
E2
8.40
5.33
4.54
9.00
6.63
5.84
2.54 BSC
5.08 BSC
10.50 10.16
10.45 10.10
10.65 10.25
8.36
7.97
6.24
6.65
8.70
6.33
5.54
02
L1
b
L
9.88
9.90
9.90
7.06
6.67
4.94
5.70
C1
C
8.06
7.67
5.94
6.30
e
e1
Ea
02(2x)
13.00 13.80 13.40
–
2.50
3.70
4°
L1
Q
ØP
θ1
θ2
4.10
2.99
3.99
10°
6°
3.75
2.74
3.84
7°
0°
3°
All Dimensions in mm
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November 2020
© Diodes Incorporated
DMN90H8D5HCT
Document number: DS38117
Rev. 3 – 3
DMN90H8D5HCT
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WIT
H
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product
described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products.
Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting
the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring
their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-
safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques,
redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from
time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and
will hold Diodes and all companies who
se products are represented herein or on Diodes’ websites, harmless against all damages and liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications.
Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark
applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties
whose products and services may be described in this document or on Diodes’ website) under this document.
5.
Diodes
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products
purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized
use.
Copyright © 2020 Diodes Incorporated
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November 2020
© Diodes Incorporated
DMN90H8D5HCT
Document number: DS38117
Rev. 3 – 3
