Diodes-Incorporated-DMNH6008SCT
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DMNH6008SCT
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D MAX
T
C
= +25°C
130A
Rated to
+
175°C
—
Ideal for High Ambient Temperature
Environments
BV
DSS
R
DS(ON) MAX
60V
8.0m
Ω
@ V
GS
= 10V
100% Unclamped Inductive Switching
—
Ensures More Reliable
and Robust End Application
Low Input Capacitance
Description
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: TO220AB
Motor Control
Case Material: Molded Plastic
, “Green” Molding Compound
.
UL Flammability Classification Rating 94V-0
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: 1.85 grams (Approximate)
Backlighting
DC-DC Converters
Power Management Functions
D
TO220AB
G
S
Top View
Pin Out Configuration
Bottom View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMNH6008SCT
TO220AB
50 Pieces/Tube
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s
definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlori
ne (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
=
Manufacturer’s Marking
6008SCT = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week (01 to 53)
6008S CT
YYWW
1 of 7
September 2018
© Diodes Incorporated
DMNH6008SCT
Document number: DS38138 Rev. 4 – 2
DMNH6008SCT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
20
Unit
V
Gate-Source Voltage
V
V
GSS
Steady
State
T
C
= +25°C
T
C
= +100°C
130
90
A
Continuous Drain Current (Note 5) V
GS
= 10V
I
D
200
80
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
A
A
I
DM
I
S
Maximum Continuous Body Diode Forward Current (Note 5)
Avalanche Current (Note 6) L=0.1mH
62
A
I
AS
E
AS
190
Avalanche Energy (Note 6) L=0.1mH
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5) T
C
= +25°C
T
C
= +100°C
Symbol
Value
210
100
Unit
W
P
D
0.7
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
°C/W
°C
R
ϴ
JC
-55 to +175
T
J
,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 48V, V
GS
= 0V
V
GS
=
16V, V
DS
= 0V
µ
A
nA
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
2
—
4
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
Diode Forward Voltage
—
—
6.0
0.7
8.0
1.2
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2,596
437
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 30V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
118
Reverse Transfer Capacitance
Gate Resistance
2.0
40
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 10V)
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
21
Q
g
nC
V
DD
= 30V, I
D
= 20A
8.3
11.8
5.7
5.0
15.6
3.4
33
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
R
g
= 1
Ω
, I
D
= 20A
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 20A, di/dt = 100A/µs
33
nC
Q
RR
Notes:
5. Device mounted on an infinite heatsink.
6. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
September 2018
© Diodes Incorporated
DMNH6008SCT
Document number: DS38138 Rev. 4 – 2
DMNH6008SCT
20
15
10
5
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 10.0V
V
GS
=5.0V
V
DS
= 5.0V
V
GS
= 4.5V
T
J
=85
℃
T
J
=125
℃
T
J
=150
℃
T
J
=175
℃
V
GS
= 4.0V
V
GS
= 3.5V
T
J
=25
℃
T
J
=-55
℃
0
0.0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
20
18
16
14
12
10
8
10.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1.00
0.00
V
GS
= 10V
6
I
D
= 20A
4
2
0
0
5
10 15 20 25 30 35 40 45 50
I
D
, DRAIN-SOURCE CURRENT (A)
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
14
16
18
20
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.016
0.014
0.012
0.01
2.2
2
V
GS
= 10V
T
J
=175
℃
T
J
=150
℃
1.8
1.6
1.4
1.2
1
T
J
=125
℃
T
J
=85
℃
0.008
0.006
0.004
0.002
0
T
J
=25
℃
T
J
=-55
℃
0.8
0.6
0.4
V
GS
= 10V, I
D
= 20A
0
5
10
15
20
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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September 2018
© Diodes Incorporated
DMNH6008SCT
Document number: DS38138 Rev. 4 – 2
DMNH6008SCT
0.016
0.014
0.012
0.01
3.5
3
I
D
= 1mA
2.5
2
I
D
= 250
μ
A
0.008
0.006
0.004
0.002
0
1.5
1
V
GS
= 10V, I
D
= 20A
0.5
0
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75 100
125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
18
16
14
12
10
8
10000
1000
100
f=1MHz
C
iss
V
GS
= 0V
C
oss
T
J
= 125
℃
T
J
= 85
℃
T
J
= 150
℃
C
rss
6
T
J
= 175
℃
T
J
= 25
℃
T
J
= -55
℃
4
2
0
10
0
0.3
0.6
0.9
1.2
0
5
10
15
20
25
30
35
40
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9.
Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
8
1000
100
10
R
DS(ON)
Limited
P
W
=1µs
P
W
=100µs
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=10µs
6
V
DS
= 30V, I
D
= 20A
4
1
P
W
=1s
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
DUT on infinite heatsink
V
GS
= 10V
0.1
0.01
2
0
0.1
1
10
100
0
10
20
30
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Qg (nC)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
September 2018
© Diodes Incorporated
DMNH6008SCT
Document number: DS38138 Rev. 4 – 2
DMNH6008SCT
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 0.7
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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September 2018
© Diodes Incorporated
DMNH6008SCT
Document number: DS38138 Rev. 4 – 2
DMNH6008SCT
Package Outline Dimensions
TO220AB
E
TO220AB
Dim Min
Max Typ
3.56 4.82
A1
0.51 1.39
A2
2.04 2.92
A
E/2
A1
A
—
—
—
Q
H1
H1
b
0.39 1.01
0.81
D2
b2
1.15 1.77
1.24
D
c
D
0.356 0.61
14.22 16.51
—
—
—
E1
L2
D1
D1
8.39 9.01
D2
11.45 12.87
—
e
e1
E
—
—
—
—
2.54
5.08
—
—
—
L1
9.66 10.66
A2
E1
6.86 8.89
H1
5.85 6.85
b2
L
L
L1
12.70 14.73
4.42
—
—
—
L2
15.80 17.51
16.00
P
Q
3.54 4.08
2.54 3.42
—
—
c
b
All Dimensions in mm
e
e1
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September 2018
© Diodes Incorporated
DMNH6008SCT
Document number: DS38138 Rev. 4 – 2
DMNH6008SCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are
intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
September 2018
© Diodes Incorporated
DMNH6008SCT
Document number: DS38138 Rev. 4 – 2
