Diodes-Incorporated-DMNH6042SSDQ-13
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DMNH6042SSDQ
60V DUAL N-CHANNEL 175°C MOSFET
Product Summary
Features and Benefits
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
I
D
Max
V
(BR)DSS
R
DS(ON)
Max
T
C
= +25°C
100% Unclamped Inductive Switching
–
Ensures More Reliable
and Robust End Application
50m
Ω @ V
GS
= 10V
65m
Ω @ V
GS
= 4.5V
16.7A
14.6A
60V
Low R
DS(ON)
–
Minimizes Power Losses
Low Q
G
–
Minimizes Switching Losses
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
Case: SO-8
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (Approximate)
Engine Management Systems
Body Control Electronics
DC-DC Converters
D1
D2
SO-8
S1
G1
S2
D1
D1
D2
D2
G1
G2
G2
S1
S2
Equivalent Circuit
Top View
Top View
Pin Configuration
Ordering Information
(Note 5)
Part Number
DMNH6042SSDQ-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to
http://www.diodes.com/quality/product_compliance_definitions.html.
Marking Information
SO-8
8
5
= Manufacturer’s Marking
H6042SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
H6042SD
WW = Week (01
–
53)
YY
WW
1
4
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August 2016
© Diodes Incorporated
DMNH6042SSDQ
Document number: DS37829 Rev. 4 – 2
DMNH6042SSDQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
±20
V
GSS
Steady
State
T
A
= +25°C
5.3
4.4
A
A
I
D
T
A
= +70°C
T
C
= +25°C
T
C
= +100°C
Continuous Drain Current (Note 7) V
GS
= 10V
Steady
State
16.7
14
I
D
I
DM
I
S
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
35
2.3
3.5
65
A
A
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current (Note 8) L = 10mH
A
I
AS
E
AS
Avalanche Energy (Note 8) L = 10mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
1.5
100
61
W
P
D
R
θ
JA
P
D
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
2.1
Steady State
t<10s
72
44
Thermal Resistance, Junction to Ambient (Note 7)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
7.25
-55 to +175
R
θ
JC
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±100
I
GSS
ON CHARACTERISTICS
(Note 9)
Gate Threshold Voltage
1.0
—
—
—
—
34
45
0.8
3.0
50
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 5.1A
V
GS
= 4.5V, I
D
= 4.4A
V
GS
= 0V, I
S
= 2.6A
Static Drain-Source On-Resistance
65
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
ISS
C
OSS
C
RSS
R
G
584
83
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
24
3.8
4.2
8.8
1.8
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
G
Q
G
V
DS
= 44V, I
D
= 5.2A
Q
GS
Q
GD
t
D(ON)
t
R
1.8
3.4
Gate-Drain Charge
Turn-On Delay Time
1.9
Turn-On Rise Time
V
GS
= 10V, V
DS
= 30V,
R
G
= 6
Ω
, I
D
= 1A
10.1
4.5
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
12.9
5.4
t
RR
I
F
= 2.6A, di/dt = 10
0A/μs
Body Diode Reverse Recovery Charge
Q
RR
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
8. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
= +25°C.
J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMNH6042SSDQ
Document number: DS37829 Rev. 4 – 2
DMNH6042SSDQ
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= 8V
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4.0V
V
DS
= 5V
V
GS
= 10V
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
= 3.3V
4
0.0
0
0
1
2
3
5
1
2
3
4
5
6
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.08
0.07
0.06
0.05
0.04
0.03
0.02
I
D
= 5.1A
V
= 4
.
5
V
GS
V
= 10V
GS
I
D
= 4.4A
0.01
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN SOURCE CURRENT (A)
Fig. 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
V
GS
= 10V, I
D
= 5.1A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2.4
2.2
2
T
J
= 175
o
C
V
GS
= 10V
1.8
1.6
1.4
1.2
1
T
J
= 125
o
C
T
J
= 150
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
= 4.5V, I
D
= 4.4A
0.8
0.6
0.4
0
5
10
15
20
25
30
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25 50 75
100 125 150 175
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
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© Diodes Incorporated
DMNH6042SSDQ
Document number: DS37829 Rev. 4 – 2
DMNH6042SSDQ
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2.8
2.6
2.4
2.2
2
V
GS
= 4.5V, I
D
= 4.4A
I
D
= 1mA
1.8
1.6
1.4
1.2
1
I
D
= 250µA
V
GS
= 10V, I
D
= 5.1A
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
V
GS
= 0V
1000
100
10
30
25
20
15
10
5
f = 1MHz
C
iss
T
A
= 175
o
C
T
A
= 150
o
C
T
A
= 125
o
C
C
oss
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
C
rss
0
0
5
10 15 20 25 30 35 40 45 50 55 60
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
8
100
10
P
W
= 1ms
R
DS(ON)
Limited
P
W
= 100µs
6
DC
1
P
W
= 10s
P
W
= 1s
4
V
DS
= 44V, I
D
= 5.2A
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
0.1
0.01
2
P
W
= 100ms
DUT on 1*MRP Board
P
W
= 10ms
V
GS
= 10V
0
0.1
1
10
100
0
2
4
6
8
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
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© Diodes Incorporated
DMNH6042SSDQ
Document number: DS37829 Rev. 4 – 2
DMNH6042SSDQ
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 100
℃
/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.0001
0.001
1E-05
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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© Diodes Incorporated
DMNH6042SSDQ
Document number: DS37829 Rev. 4 – 2
DMNH6042SSDQ
Package Outline Dimensions
SO-8
SO-8
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
–
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
–
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
E
1
E
E1
E0
e
h
L
b
E1
h
)
Q
sides
All
–
0.62
0.60
–
0.82
0.70
(
7°
9°
c
Q
4°±3°
A
All Dimensions in mm
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
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© Diodes Incorporated
DMNH6042SSDQ
Document number: DS37829 Rev. 4 – 2
DMNH6042SSDQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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August 2016
© Diodes Incorporated
DMNH6042SSDQ
Document number: DS37829 Rev. 4 – 2
