Diodes-Incorporated-DMP1022UFDF-13
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DMP1022UFDF
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
I
D
max
BV
DSS
R
DS(ON)
max
T
A
= +25°C
Low Gate Threshold Voltage
-9.5A
-8.5A
-7.2A
-6.6A
14.8m
Ω
@ V
GS
= -4.5V
19
mΩ @ V
GS
= -2.5V
26m
Ω @ V
GS
= -1.8V
32m
Ω @ V
GS
= -1.5V
Fast Switching Speed
-12V
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
Description
Mechanical Data
This MOSFET is designed specifically for use in battery management
applications.
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe.
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
(Type F)
D
G
ESD PROTECTED
Gate Protection
Diode
S
Pin Out
Bottom View
Internal Schematic
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMP1022UFDF-7
DMP1022UFDF-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions
of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
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January 2020
© Diodes Incorporated
DMP1022UFDF
D
atasheet number: DS36624 Rev. 6 – 2
DMP1022UFDF
Marking Information
Site 1
PU = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
PU
M = Month (ex: 9 = September)
Date Code Key
Year
2013
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
A
…
H
I
J
K
L
M
N
O
P
R
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2
PU = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
P
U
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2013
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
3
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
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January 2020
© Diodes Incorporated
DMP1022UFDF
D
atasheet number: DS36624 Rev. 6 – 2
DMP1022UFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-12
Unit
V
Gate-Source Voltage
±8
V
V
GSS
Steady
State
T
A
= +25°C
-9.5
-7.6
A
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= -4.5V
-11.0
-8.8
t<5s
A
A
A
A
I
D
I
DM
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
-90
T
A
= +25°C
T
C
= +25°C
-2.5
-7.1
Continuous Source-Drain Diode Current
Pulsed Source-Drain Diode Current (
10μs
Pulse, Duty Cycle = 1%)
-50
I
SM
Thermal Characteristics
Characteristic
Symbol
Value
0.73
Unit
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
θ
JA
P
D
0.47
172
128
T
A
= +70°C
Steady State
t<5s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
2.1
T
A
= +25°C
T
A
= +70°C
Steady State
t<5s
1.3
59
45
5.1
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
—
-200
-2
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250
μA
V
DS
= -12V, V
GS
= 0V
V
DS
= -12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
nA
µA
µA
Zero Gate Voltage Drain Current T
J
= +25°C
Zero Gate Voltage Drain Current T
J
= +55°C (Note 8)
Gate-Source Leakage
—
I
DSS
—
±10
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.35
—
—
12
-0.8
14.8
19
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -4A
V
GS
= -2.5V, I
D
= -4A
V
GS
= -1.8V, I
D
= -4A
V
GS
= -1.5V, I
D
= -2A
V
GS
= 0V, I
S
= -8A
15
Static Drain-Source On-Resistance
20
26
23
32
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-0.8
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
2,712
514
467
8.6
—
—
—
18
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
pF
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -8V, V
DS
= -6V, I
D
= -10A
48.3
28.6
4.2
Total Gate Charge
Q
g
Total Gate Charge
Q
g
nC
ns
V
GS
= -4.5V, V
DS
= -6V,
I
D
= -10A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
7.0
25.1
39.8
141
147
Turn-On Delay Time
Turn-On Rise Time
V
DS
= -6V, V
GS
= -4.5V,
R
G
=
1Ω
, I
D
= -8A
Turn-Off Delay Time
Turn-Off Fall Time
t
D(OFF)
t
F
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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January 2020
© Diodes Incorporated
DMP1022UFDF
D
atasheet number: DS36624 Rev. 6 – 2
DMP1022UFDF
20
16
12
8
30
25
20
15
10
5
V
= -5.0V
DS
V
= -8.0V
GS
= -4.5V
V
GS
= -2.5V
V
GS
V
= -2.0V
GS
= -1.8V
V
GS
V
= -1.5V
GS
T
= 150
C
A
T
A
= 125
C
T
= 85
C
A
T
= 25
C
A
4
T
= -55
C
A
V
= -1.2V
GS
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
-V
GS
, GATE-SOURCE VOLTAGE (V)
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
0.03
V
= -4.5V
GS
0.025
0.02
0.015
0.01
0.005
0
V
= -1.5V
GS
T
= 150
C
= 125
C
A
T
A
T
= 85
C
A
V
= -1.8V
GS
T
= 25
C
A
T
= -55
C
A
V
= -2.5V
GS
V
= -4.5V
GS
0
4
8
12
16
20
0
5
10
15
20
25
30
-I
D
, DRAIN SOURCE CURRENT (A)
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and
T
e
mperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.7
0.04
0.03
0.02
0.01
0
1.5
1.3
1.1
0.9
0.7
0.5
V
I
= -2.5V
GS
= -5A
D
V
I
= -2.5V
GS
= -5A
D
V
I
= -4.5V
GS
= -10A
D
V
I
= -4.5V
GS
= -10A
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with
T
emperature
Figure 6 On-Resistance Variation with
T
emperature
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January 2020
© Diodes Incorporated
DMP1022UFDF
D
atasheet number: DS36624 Rev. 6 – 2
DMP1022UFDF
1.4
1.2
1
20
16
12
8
0.8
0.6
0.4
0.2
0
T =
25
C
A
-I =
1mA
D
-I
D
=
2
5
0
µ
A
4
0
0.4
0.6
0.8
1
1.2
-50 -25
0
25
50
75
100 125 150
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Diode Forward Voltage vs. Current
Figure 7 Gate Threshold Variation vs. Ambient
T
emperature
4000
8
6
4
2
0
f = 1MHz
3500
3000
C
iss
2500
2000
1500
1000
V
I
= -6V
DS
= -10A
D
C
oss
500
C
rss
0
0
3
6
9
12
15
0
5
10 15 20 25 30 35 40 45 50
Q
g
, TOTAL GATE CHARGE (nC)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Figure 10 Gate-Charge Characteristics
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 172
℃
/W
Single Pulse
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
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January 2020
© Diodes Incorporated
DMP1022UFDF
D
atasheet number: DS36624 Rev. 6 – 2
DMP1022UFDF
Package Outline Dimensions
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
A3
A1
A
Dim
A
A1
A3
b
Min Max
0.57
0.63
0.00 0.05
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
0.65 BSC
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
z2
D2
E
E2
k1
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325
0.275
0.20 BSC
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z(4x)
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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January 2020
© Diodes Incorporated
DMP1022UFDF
D
atasheet number: DS36624 Rev. 6 – 2
DMP1022UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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January 2020
© Diodes Incorporated
DMP1022UFDF
D
atasheet number: DS36624 Rev. 6 – 2
