Diodes-Incorporated-DMP1022UFDF-7

DMP1022UFDF  

12V P-CHANNEL ENHANCEMENT MODE MOSFET  

Product Summary  

Features  

















0.6mm profile

–

ideal for low profile

 

applications  

PCB footprint of 4mm

2  

I

D

max  

V

(BR)DSS  

R

DS(ON)

max  

T

A

= +25°C  

Low Gate Threshold Voltage  

-9.5A  

-8.5A  

-7.2A  

-6.6A  

14.8m

Ω

@ V

GS

= -4.5V  

19

mΩ @ V

GS

= -2.5V  

26m

Ω @ V

GS

= -1.8V  

32m

Ω @ V

GS

= -1.5V  

Fast Switching Speed  

-12V  

ESD Protected Gate  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note

3)  

Qualified to AEC-Q101 Standards for High Reliability  

Description  

Mechanical Data  

This MOSFET is designed specifically for use in battery management  

applications.  





Case: U-DFN2020-6  

Case Material: Molded Plastic, “Green” Molding Compound.  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish

–

NiPdAu over Copper Leadframe.  





e4  

Solderable per MIL-STD-202, Method 208  

Weight: 0.0065 grams (Approximate)  



D

U-DFN2020-6  

G

ESD PROTECTED  

Gate Protection  

Diode  

S

Pin Out  

Internal Schematic  

Top View  

Bottom View  

Bottom View  

Ordering Information

(Note 4)  

Part Number  

DMP1022UFDF-7  

DMP1022UFDF-13  

Case  

U-DFN2020-6  

U-DFN2020-6  

Packaging  

3,000/Tape & Reel  

10,000/Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Hal

ogen- and Antimony-free, “Green”  

and Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br

+ Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, go to our website at

Marking Information  

PU = Product Type Marking Code  

YM = Date Code Marking  

Y = Year (ex: A = 2013)  

PU  

M = Month (ex: 9 = September)  

Date Code Key  

Year  

2013  

2014  

2015  

2016  

2017  

2018  

2019  

2020  

2021  

2022  

Code  

A

B

C

D

E

F

G

H

I

J

Month  

Code  

Jan  

1

Feb  

2

Mar  

3

Apr  

4

May  

5

Jun  

6

Jul  

7

Aug  

8

Sep  

9

Oct  

O

Nov  

N

Dec  

D

1 of 6  

October 2015  

© Diodes Incorporated  

DMP1022UFDF  

D

atasheet number: DS36624 Rev. 5 – 2  

DMP1022UFDF  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

Value  

-12  

Units  

V

V

Gate-Source Voltage  

±8  

V

GSS  

Steady  

State  

T

A

= +25°C  

-9.5  

-7.6  

A

I

D  

T

A

= +70°C  

T

A

= +25°C  

T

A

= +70°C  

Continuous Drain Current (Note 6) V

GS

= -4.5V  

-11.0  

-8.8  

t<5s  

A

A

A

A

I

D  

I

DM  

I

S  

Pulsed Drain Current (10

μ

s pulse, duty cycle = 1%)  

-90  

T

A

= +25°C  

T

C

= +25°C  

-2.5  

-7.1  

Continuous Source-Drain Diode Current  

Pulsed Source-Drain Diode Current (

10μs pulse, duty cycle = 1%

)  

-50  

I

SM  

Thermal Characteristics  

Characteristic  

Symbol  

Value  

0.73  

Units  

T

A

= +25°C  

Total Power Dissipation (Note 5)  

W

P

D  

R

θ

JA  

P

D  

0.47  

172  

128  

T

A

= +70°C  

Steady state  

t<5s  

Thermal Resistance, Junction to Ambient (Note 5)  

Total Power Dissipation (Note 6)  

°C/W  

W

2.1  

T

A

= +25°C  

T

A

= +70°C  

Steady state  

t<5s  

1.3  

59  

45  

5.1  

Thermal Resistance, Junction to Ambient (Note 6)  

R

θ

JA  

°C/W  

°C  

Thermal Resistance, Junction to Case (Note 6)  

Operating and Storage Temperature Range  

Steady state  

R

θ

JC  

-55 to +150  

T

J,

T

STG  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 7)  

Drain-Source Breakdown Voltage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

-12  

—

—

—

—

—

—

-200  

-2  

V

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= -250

μA  

V

DS

= -12V, V

GS

= 0V  

V

DS

= -12V, V

GS

= 0V  

V

GS

= ±8V, V

DS

= 0V  

nA  

µA  

µA  

Zero Gate Voltage Drain Current T

J

= +25°C  

Zero Gate Voltage Drain Current T

J

= +55°C

 

(Note 8)  

Gate-Source Leakage  

—

I

DSS  

—

±10  

I

GSS  

ON CHARACTERISTICS (Note 7)  

Gate Threshold Voltage  

-0.35  

—

—

12  

-0.8  

14.8  

19  

V

mΩ  

V

V

GS(th)  

R

DS(ON)  

V

SD  

V

DS

= V

GS

, I

D

= -250

μA  

V

GS

= -4.5V, I

D

= -4A  

V

GS

= -2.5V, I

D

= -4A  

V

GS

= -1.8V, I

D

= -4A  

V

GS

= -1.5V, I

D

= -2A  

V

GS

= 0V, I

S

= -8A  

15  

Static Drain-Source On-Resistance  

20  

26  

23  

32  

—

Diode Forward Voltage  

DYNAMIC CHARACTERISTICS (Note 8)  

Input Capacitance  

-0.8  

-1.2  

—

—

—

—

—

—

—

—

—

—

—

—

2,712  

514  

467  

8.6  

—

—

—

18  

—

—

—

—

—

—

—

—

C

iss  

C

oss  

C

rss  

R

g  

V

DS

= -10V, V

GS

= 0V,  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

pF  

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz  

V

GS

= -8V, V

DS

= -6V, I

D

= -10A  

48.3  

28.6  

4.2  

Total Gate Charge  

Q

g  

Total Gate Charge  

Q

g  

nC  

ns  

V

GS

= -4.5V, V

DS

= -6V,  

I

D

= -10A  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

D(on)  

t

r  

7.0  

25.1  

39.8  

141  

147  

Turn-On Delay Time  

Turn-On Rise Time  

V

DS

= -6V, V

GS

= -4.5V,  

R

G

=

1Ω

, I

D

= -8A  

Turn-Off Delay Time  

Turn-Off Fall Time  

t

D(off)  

t

f  

Notes:  

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.  

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.  

7. Short duration pulse test used to minimize self-heating effect.  

8. Guaranteed by design. Not subject to production testing.  

2 of 6  

October 2015  

© Diodes Incorporated  

DMP1022UFDF  

D

atasheet number: DS36624 Rev. 5 – 2  

DMP1022UFDF  

20  

16  

12  

8

30  

25  

20  

15  

10  

5

V

= -5.0V  

DS  

V

= -8.0V  

GS  

= -4.5V  

V

GS  

= -2.5V  

V

GS  

V

= -2.0V  

GS  

= -1.8V  

V

GS  

V

= -1.5V  

GS  

T

= 150



C  

A

T

A

= 125



C  

T

= 85



C  

A

T

= 25



C  

A

4

T

= -55



C  

A

V

= -1.2V  

GS  

0

0

0

0.5  

1

1.5  

2

2.5  

3

3.5  

4

4.5  

5

0

0.5  

1

1.5  

2

2.5  

3

-V

GS

, GATE-SOURCE VOLTAGE (V)  

-V

DS

, DRAIN -SOURCE VOLTAGE (V)  

Figure 2 Typical Transfer Characteristics  

Figure 1 Typical Output Characteristics  

0.06  

0.05  

0.04  

0.03  

0.02  

0.01  

0

0.03  

0.025  

0.02  

0.015  

0.01  

0.005  

0

V

= -4.5V  

GS  

V

= -1.5V  

GS  

T

= 150



C  

= 125



C  

A

T

A

T

= 85



C  

A

V

= -1.8V  

GS  

T

= 25



C  

A

T

= -55



C  

A

V

= -2.5V  

GS  

V

= -4.5V  

GS  

0

4

8

12  

16  

20  

0

5

10  

15  

20  

25  

30  

-I

D

, DRAIN SOURCE CURRENT (A)  

-I

D

, DRAIN SOURCE CURRENT (A)  

Figure 4 Typical On-Resistance vs.  

Drain Current and

T

e

mperature  

Figure 3 Typical On-Resistance vs.  

Drain Current and Gate Voltage  

1.7  

0.04  

0.03  

0.02  

0.01  

0

1.5  

1.3  

1.1  

0.9  

0.7  

0.5  

V

I

= -2.5V  

GS  

= -5A  

D

V

I

= -2.5V  

GS  

= -5A  

D

V

I

= -4.5V  

GS  

= -10A  

D

V

I

= -4.5V  

GS  

= -10A  

D

-50 -25  

0

25  

50  

75 100

 

125 150  

-50 -25  

0

25  

50  

75 100

 

125 150  

T

J

, JUNCTION TEMPER

A

T

URE (



C)  

T

J

, JUNCTION TEMPERATURE (



C)  

Figure 5 On-Resistance Variation with

T

emperature  

Figure 6 On-Resistance Variation with

T

emperature  

3 of 6  

October 2015  

© Diodes Incorporated  

DMP1022UFDF  

D

atasheet number: DS36624 Rev. 5 – 2  

DMP1022UFDF  

1.4  

1.2  

1

20  

16  

12  

8

0.8  

0.6  

0.4  

0.2  

0

T =

 

25



C  

A

-I =

 

1mA  

D

-I =

 

250µA  

D

4

0

0.4  

0.6  

0.8  

1

1.2  

-50 -25  

0

25  

50  

75  

100 125 150  

-V

SD

, SOURCE-DRAIN VOLTAGE (V)  

T

A

, AMBIENT TEMPERATURE (°C)  

Figure 8 Diode Forward Voltage vs. Current  

Figure 7 Gate Threshold Variation vs. Ambient

T

emperature  

4000  

8

6

4

2

0

f = 1MHz  

3500  

3000  

C

iss  

2500  

2000  

1500  

1000  

V

I

= -6V  

DS  

= -10A  

D

C

oss  

500  

C

rss  

0

0

5

10 15 20 25 30 35 40 45 50  

Q

g

, TOTAL GATE CHARGE (nC)  

0

3

6

9

12  

15  

-V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 9 Typical Junction Capacitance  

Figure 10 Gate-Charge Characteristics  

1

D = 0.7  

D = 0.5  

D = 0.3  

0.1  

D = 0.1  

D = 0.9  

D = 0.05  

D = 0.02  

0.01  

D = 0.01  

D = 0.005  

R



JA

(t) = r(t) * R



JA  

R



JA

= 172°C/W  

Single Pulse  

Duty Cycle, D = t1/ t2  

0.001  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

t1, PULSE DURATION TIMES (sec)  

Figure 11

 

Transient Thermal Resistance  

4 of 6  

October 2015  

© Diodes Incorporated  

DMP1022UFDF  

D

atasheet number: DS36624 Rev. 5 – 2  

DMP1022UFDF  

Package Outline Dimensions  

Please see AP02002 at

r the latest version.  

U-DFN2020-6  

(Type F)  

A3  

A1  

A

Dim  

A

A1  

A3  

b

Min Max  

0.57 0.63  

0.00 0.05  

Typ  

0.60  

0.03  

0.15  

0.30  

2.00  

0.95  

0.38  

2.00  

1.15  

0.70  

Seating Plane  

–

–

D

0.25 0.35  

1.95 2.05  

0.85 1.05  

D

D2  

e3  

k2  

e4  

D2a

0.33 0.43  

E

E2  

E2a  

e

e2  

e3  

e4  

k

1.95 2.05  

1.05 1.25  

0.65 0.75  

D2a  

E2a  

z2  

0.65 BSC  

0.863 BSC  

0.70 BSC  

0.325 BSC  

0.37 BSC  

0.15 BSC  

D2  

E

E2  

k1  

e2  

k1  

k2  

L

L

k

z1  

0.36 BSC  

0.225 0.325

 

0.275  

0.20 BSC  

z

z1  

z2  

0.110 BSC  

0.20 BSC  

e

b

z( 4x)  

All Dimensions in mm  

Suggested Pad Layout  

Please see AP02001 at

r the latest version.  

X3  

Y

C

X

Value  

Dimensions  

(in mm)  

0.650  

0.400  

0.480  

0.950  

1.700  

0.425  

0.800  

1.150  

1.450  

2.300  

C

X

X1  

X2  

X3  

Y

Y1  

Y2  

Y3  

Y4  

Y3  

Y2  

Y1 Y4  

X1  

Pin1  

X2  

5 of 6  

October 2015  

© Diodes Incorporated  

DMP1022UFDF  

D

atasheet number: DS36624 Rev. 5 – 2  

DMP1022UFDF  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others.

 

Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated.

 

Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2015, Diodes Incorporated  

6 of 6  

October 2015  

© Diodes Incorporated  

DMP1022UFDF  

D

atasheet number: DS36624 Rev. 5 – 2