Diodes-Incorporated-DMP1022UWS-7
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DMP1022UWS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
I
D
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
-7.2A
-6.5A
18m
Ω
@ V
GS
= -4.5V
22m
Ω
@ V
GS
= -2.5V
-12V
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: V-DFN3020-8
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
–
NiPdAu Annealed over Copper Leadframe.
Power Management Functions
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.011 grams (Approximate)
V-DFN3020-8
D
D
D
D
S
D
D
D
G
G
Gate Protection
Diode
ESD PROTECTED
S
Bottom View
Pin Configuration
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP1022UWS-7
DMP1022UWS-13
Case
V-DFN3020-8
V-DFN3020-8
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
1F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
YM
1F
M = Month (ex: 9 = September)
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
Code
F
G
H
I
J
K
L
M
N
O
P
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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July 2018
© Diodes Incorporated
DMP1022UWS
Document number: DS36945 Rev. 3 – 2
DMP1022UWS
Maximum Ratings
–
P-CHANNEL MOSFET
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
-12
Unit
V
Drain-Source Voltage
Gate-Source Voltage
±8
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
-7.2
-5.3
A
A
I
D
I
D
Continuous Drain Current (Note 6) V
GS
= -4.5V
-9.4
-7.6
t<10s
-1.8
-60
-13
9
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
A
A
I
S
I
DM
I
AS
E
AS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
0.9
Unit
W
Total Power Dissipation (Note 5)
Steady State
135
78
1.4
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
Total Power Dissipation (Note 6)
°C/W
W
R
JA
P
D
Steady State
90
52
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
t<10s
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
15.6
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
–
P-CHANNEL MOSFET
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250
μA
V
DS
= -10V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
µA
µA
—
±10
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.35
—
—
12
-1
18
V
m
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -9A
V
GS
= -2.5V, I
D
= -8.5A
V
GS
= -1.8V, I
D
= -7.5A
V
GS
= 0V, I
S
= -8A
Static Drain-Source On-Resistance
15
22
23
28
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.8
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2847
808
731
9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= -4V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -5V, V
DS
= -4V, I
D
= -10A
30
Total Gate Charge
Q
g
27
Total Gate Charge
Q
g
nC
ns
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -10A
4.1
6.4
20
Gate-Source Charge
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
28
Turn-On Rise Time
V
DS
= -4V, V
GS
= -4.5V,
R
g
=
1Ω
, I
D
= -9.8A
117
93
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Bodyy Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
28
ns
t
RR
I
S
= -9.8A, dI/dt = 100A/
μ
s
13
nC
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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July 2018
© Diodes Incorporated
DMP1022UWS
Document number: DS36945 Rev. 3 – 2
DMP1022UWS
30.0
27.0
24.0
21.0
18.0
15.0
12.0
9.0
30
27
24
21
18
15
12
9
V
DS
= -5V
V
GS
= -1.8V
V
GS
=-2.0V
V
GS
= -2.5V
V
GS
= -3.0V
V
GS
= -4.5V
V
GS
= -1.5V
V
GS
= -8.0V
T
J
=125
℃
6
6.0
T
J
=150
℃
T
J
=85
℃
T
J
=25
℃
T
J
=-55
℃
3
3.0
V
GS
= -1.0V
0
0.0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.08
0.06
0.04
0.02
0
0.06
0.055
0.05
V
GS
= -1.5V
0.045
0.04
0.035
0.03
I
D
= -8.5A
I
D
= -9.0A
V
GS
= -1.8V
V
GS
= -2.5V
0.025
0.02
V
GS
= -4.5V
0.015
0.01
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.018
0.016
0.014
0.012
0.01
1.4
1.3
1.2
1.1
1
V
GS
= -4.5V
V
GS
= -2.5V, I
D
= -8.5A
150
℃
125
℃
85
℃
0.9
0.8
0.7
25
℃
V
GS
= -4.5V, I
D
= -9.0A
-55
℃
0.008
0
3
6
9
12 15 18 21 24 27 30
-50
-25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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July 2018
© Diodes Incorporated
DMP1022UWS
Document number: DS36945 Rev. 3 – 2
DMP1022UWS
0.025
0.02
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
I
D
= -1mA
V
GS
= -2.5V, I
D
= -8.5A
I
D
= -250
μ
A
0.015
0.01
V
GS
= -4.5V, I
D
= -9.0A
0.005
-50
-25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Temperature
10000
30
27
24
21
18
15
12
9
f=1MHz
V
GS
= 0V
C
iss
1000
C
oss
T
J
= 85
℃
C
rss
T
J
= 125
℃
T
J
= 25
℃
6
T
J
= 150
℃
3
T
J
= -55
℃
100
0
0
2
4
6
8
10
12
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Figure 10. Typical Junction Capacitance
100
10
5
4
3
2
1
0
R
DS(ON)
Limited
P
W
=100µs
V
DS
= -4V, I
D
= -10A
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
P
W
=10s
1
0.1
0.01
T
J(Max)
= 150
℃
T
A
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= -4.5V
DC
0
4
8
12
16
20
24
28
32
0.01
0.1
1
10
100
Qg (nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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July 2018
© Diodes Incorporated
DMP1022UWS
Document number: DS36945 Rev. 3 – 2
DMP1022UWS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
D=0.005
D=Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 136
℃
/W
Duty Cycle, D = t1 / t2
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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July 2018
© Diodes Incorporated
DMP1022UWS
Document number: DS36945 Rev. 3 – 2
DMP1022UWS
Package Outline Dimensions
V-DFN3020-8
A
A3
A1
Seating Plane
V-DFN3020-8
Dim Min Max
Typ
0.80
0.02
0.203
0.30
3.00
0.65
2.00
0.35
0.375
A
A1
A3
b
D
e
E
L
Z
0.77
0.83
D
0
0.05
–
–
e
0.25 0.35
2.95 3.05
–
–
( Pin
#1 ID)
E
1.95 2.05
0.30 0.40
–
–
All Dimensions in mm
L
Z
b
Suggested Pad Layout
V-DFN3020-8
X1
X
Y
Value
Dimensions
(in mm)
0.650
1.000
0.400
2.350
0.650
2.300
C
G
X
X1
Y
Y1
Y1
G
C
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July 2018
© Diodes Incorporated
DMP1022UWS
Document number: DS36945 Rev. 3 – 2
DMP1022UWS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
July 2018
© Diodes Incorporated
DMP1022UWS
Document number: DS36945 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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