Diodes-Incorporated-DMP2008UFG-13
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DMP2008UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
Features
•
•
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
I
D
max
V
(BR)DSS
R
DS(ON)
max
T
A
= +25°C
-14A
-10A
-9.3A
-8.3A
8m
Ω
@ V
GS
= -4.5V
9.8m
Ω
@ V
GS
= -2.5V
13m
Ω
@ V
GS
= -1.8V
17m
Ω
@ V
GS
= -1.5V
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
-20V
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Applications
•
•
•
•
•
Load Switch
Power Management Functions
•
Drain
POWERDI3333-8
Pin 1
S
S
S
G
Gate
D
D
D
Source
D
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMP2008UFG-7
DMP2008UFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Se
e http://www.diodes.com/quality/lead_free.html fo
r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
S36 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
1 of 6
August 2014
© Diodes Incorporated
DMP2008UFG
Document number: DS35694
Rev. 14 – 2
DMP2008UFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Units
V
V
Gate-Source Voltage (Note 5)
±8
V
GSS
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
-14
-11
-54
Steady
State
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D
Pulsed Drain Current (10
μ
s pulse, duty cycle = 1%)
-80
-2.2
-15
A
A
I
DM
I
S
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8)
A
I
AS
E
AS
Avalanche Energy (Note 8)
-113
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
2.4
Units
T
A
= +25°C
Total Power Dissipation (Note 6)
W
41
52
137
3.0
T
C
= +25°C
(Note 5)
(Note 6)
Thermal Resistance, Junction to Ambient
R
Θ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
Θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
-1
V
µA
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
GS
=
±
8V, V
DS
= 0V
—
±100
nA
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-0.4
—
—
—
—
—
—
42
-1.0
8
V
m
Ω
S
V
GS(th)
R
DS (ON)
|Y
fs
|
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -12A
V
GS
= -2.5V, I
D
= -10A
V
GS
= -1.8V, I
D
= -9.3A
V
GS
= -1.5V, I
D
= -8.3A
V
DS
= -5V, I
D
= -12A
—
9.8
13
17
—
Static Drain-Source On-Resistance
—
—
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
6909
635
563
2.5
72
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
G
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
(V
GS
= -4.5V)
Total Gate Charge
(V
GS
= -2.5V)
Gate-Source Charge
Q
g
40
Q
g
nC
ns
V
DD
= -10V, I
D
= -12A
8.6
14.5
22
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
33
Turn-On Rise Time
V
GS
= -4.5V, V
DD
= -10V,
R
G
= 6
Ω
, I
D
= -12A
291
124
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
BODY DIODE CHARACTERISTICS
—
—
—
—
-0.7
-0.7
25
—
—
—
—
V
V
V
GS
= 0V, I
S
= -12A
Diode Forward Voltage
V
SD
V
GS
= 0V, I
S
= -2A
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
ns
nC
t
rr
I
F
= -12A, di/dt = 100A/µs
I
F
= -12A, di/dt = 100A/µs
15
Q
rr
Notes:
5. AEC-Q101 V
GS
maximum is
±
6.4V.
6. R
Θ
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
Θ
JC
is guaranteed by design
JA
while R
Θ
JA
is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
2 of 6
August 2014
© Diodes Incorporated
DMP2008UFG
Document number: DS35694
Rev. 14 – 2
DMP2008UFG
50
40
30
25
V
= 4.5V
GS
V
= -5.0V
DS
V
= 2.5V
GS
V
= 2.0V
GS
20
V
= 1.8V
GS
30
20
V
= 1.5V
GS
15
10
T
= 150
°
C
A
T
= 85
°
C
A
10
0
T
= 125
°
C
A
5
0
V
= 1.2V
GS
T
= 25
°
C
A
T
= -55
°
C
A
0
0.5
1.0
1.5
2.0
0
0.5
-V
GS
, GATE-SOURCE VOL
T
A
GE (V)
Fig. 2 Typical Transfer Characteristics
1.0
1.5
2.0
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0.030
0.025
0.05
0.04
0.020
0.015
0.010
0.03
0.02
I
= -12A
D
T
= 125°C
A
I
= -12A
= 25°C
0.01
0
D
0.005
0
T
A
0
10
20
30
40
50
1
2
3
4
5
6
7
8
V
GS
, GATE-SOURCE VOL
T
A
GE (V)
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.2
2.0
0.020
0.016
V
= -4.5V
GS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
= 150
°
C
0.012
A
T
= 125
°
C
A
0.008
0.004
0
T
= 85
°
C
= 25
°
C
A
T
A
A
T
= -55
°
C
0.2
0
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
°
C)
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 6 On-Resistance Variation with
T
emperature
Fig. 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
POWERDI is a registered trademark of Diodes Incorporated
3 of 6
August 2014
© Diodes Incorporated
DMP2008UFG
Document number: DS35694
Rev. 14 – 2
DMP2008UFG
0.020
0.015
1.2
1.0
0.8
V
I
= -2.5V
GS
= -10A
D
0.010
0.6
0.4
V
I
= -4.5V
GS
= -12A
D
0.005
0
0.2
0
-50 -25
0
25
50
75 100
125 150
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
°
C)
Fig. 7 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient
T
e
mperature
100,000
30
25
f = 1MHz
20
10,000
1,000
C
iss
15
10
C
oss
C
rss
5
0
100
100
10
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
4.5
4.0
R
DS(on)
Limited
3.5
3.0
2.5
2.0
1.5
1.0
DC
= 10s
P
1
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
0.1
T
J(max)
= 150°C
T
A
= 25°C
= 100µs
W
V
GS
= -8V
Single Pulse
DUT on 1 * MRP Board
0.5
0
0.01
0.01
0.1
1
10
100
0
10
20
30
40
50
60
70 80
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 12 SOA, Safe Operation Area
Fig. 11 Gate-Charge Characteristics
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August 2014
© Diodes Incorporated
DMP2008UFG
Document number: DS35694
Rev. 14 – 2
DMP2008UFG
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
A
POWERDI3333-8
Dim Min
Max Typ
A3
A1
D
E
3.25 3.35 3.30
3.25 3.35 3.30
D
D2
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
L
(4x)
A
A1
A3
b
b2
L
L1
e
Z
0.75 0.85 0.80
1
8
4
5
0
−
0.05 0.02
0.203
Pin 1 ID
E2
−
b2
(4x)
0.27 0.37 0.32
0.20
0.35 0.45 0.40
E
−
−
0.39
0.65
0.515
−
−
−
−
−
−
L1
(3x)
Z (4x)
e
b (8x)
All Dimensions in mm
Suggested Pad Layout
X
G
Dimensions
Value (in mm)
0.650
C
G
8
5
4
Y2
Y3
G1
0.230
Y1
G1
Y
0.420
3.700
Y
Y1
Y2
Y3
X
2.250
1.850
0.700
2.370
1
X2
0.420
X2
C
POWERDI is a registered trademark of Diodes Incorporated
5 of 6
August 2014
© Diodes Incorporated
DMP2008UFG
Document number: DS35694
Rev. 14 – 2
DMP2008UFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are
intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated
6 of 6
August 2014
© Diodes Incorporated
DMP2008UFG
Document number: DS35694
Rev. 14 – 2
