Diodes-Incorporated-DMP2008USS-13
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DMP2008USS
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
BV
DSS
R
DS(ON)
max
Low Input Capacitance
T
A
= +25°C
Fast Switching Speed
9m
Ω @ V
GS
= -4.5V
11m
Ω @ V
GS
= -2.5V
16m
Ω @ V
GS
= -1.8V
-13A
-12A
-10A
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony
Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
-20V
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, which makes it
ideal for high-efficiency power management applications.
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections Indicator: See Diagram Below
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Load Switch
Power Management Functions
SO-8
D
S
S
S
G
D
D
G
D
D
S
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP2008USS-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
= Manufacturer’s Marking
P2008US = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 20 = 2020)
WW = Week (01 to 53)
P2008US
YY WW
1
4
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January 2020
© Diodes Incorporated
DMP2008USS
Document number: DS41287 Rev. 3 – 2
DMP2008USS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
Value
-20
Unit
V
V
DSS
GSS
Gate-Source Voltage
±8
V
V
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
-13
-10
-38
Steady
State
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Pulsed Body Diode Forward Current (380μs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7)
-110
-110
-49
A
A
I
DM
I
SM
I
S
A
-119
110
A
I
AS
E
AS
Avalanche Energy (Note 7)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
1.4
Unit
W
Steady State
Steady State
Steady State
Steady State
Total Power Dissipation (Note 5)
87
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
ϴ
JA
P
D
2.3
54
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
ϴ
JA
R
ϴ
JC
T
J,
T
STG
°C/W
7
-55 to +150
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
µA
nA
—
±1 00
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.4
—
—
6.5
-1.0
9
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -12A
V
GS
= -2.5V, I
D
= -11A
V
GS
= -1.8V, I
D
= -9A
V
GS
= 0V, I
S
= -10A
Static Drain-Source On-Resistance
—
8.4
11
—
11.2
-0.7
16
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6820
622
589
2.9
76
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
159
6.9
15.6
22
Q
g
nC
ns
V
DS
= -10V, I
D
= -12A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
33
V
GS
= -4.5V, V
DS
= -10V,
R
G
= 6Ω, I
D
= -12A
Turn-Off Delay Time
291
124
25
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= -12A, di/dt = 100A/µs
I
F
= -12A, di/dt = 100A/µs
16
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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January 2020
© Diodes Incorporated
DMP2008USS
Document number: DS41287 Rev. 3 – 2
DMP2008USS
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= -1.8V
V
GS
= -2.0V
V
GS
= -2.2V
V
GS
= -2.5V
V
GS
= -3.0V
V
DS
= -5V
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -1.5V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
V
GS
= -1.2V
T
J
= 25
℃
T
J
= -55
℃
0.0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.014
0.012
0.01
0.04
0.03
0.02
0.01
0
V
GS
= -1.8V
I
D
= -12A
I
D
= -11A
V
GS
= -2.5V
V
GS
= -4.5V
0.008
0.006
0.004
I
D
= -9A
0
2
4
6
8
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
0.01
0.008
0.006
0.004
0.002
1.6
1.4
1.2
1
T
J
= 150
℃
V
GS
= -4.5V, I
D
= -12A
V
GS
= -2.5V, I
D
= -11A
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -1.8V, I
D
= -9A
T
J
= -55
℃
0.8
0.6
V
GS
= -4.5V
0
5
10
15
20
25
30
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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January 2020
© Diodes Incorporated
DMP2008USS
Document number: DS41287 Rev. 3 – 2
DMP2008USS
0.022
0.02
1
0.8
0.6
0.4
0.2
0
0.018
0.016
0.014
0.012
0.01
V
GS
= -1.8V, I
D
= -9A
V
GS
= -2.5V, I
D
= -11A
I
D
= -1mA
0.008
0.006
0.004
0.002
0
I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -12A
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
100000
V
GS
= 0V
f = 1MHz
C
iss
10000
1000
100
C
oss
C
rss
T
J
= 150
o
C
T
J
= 85
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
10
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
Limited
P
W
= 10ms
P
W
= 100ms
P
W
= 1ms
P
W
= 100µs
6
4
1
T
J(Max)
= 150
℃
T
C
= 25
℃
V
DS
= -10V, I
D
= -12A
P
W
= 1s
P
W
= 10s
2
0.1
0.01
Single Pulse
DUT on
1*MRP Board
V
GS
= -4.5V
DC
0
0
25
50
75
Q
g
(nC)
Figure 11. Gate Charge
100
125
150
175
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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January 2020
© Diodes Incorporated
DMP2008USS
Document number: DS41287 Rev. 3 – 2
DMP2008USS
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 85.6
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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January 2020
© Diodes Incorporated
DMP2008USS
Document number: DS41287 Rev. 3 – 2
DMP2008USS
Package Outline Dimensions
SO-8
SO-8
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
E
1
E
E1
E0
e
h
L
b
E1
—
0.62
0.60
—
0.82
0.70
h
Q
sides)
Q
All
(
7°
9°
All Dimensions in mm
c
4°± 3°
A
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
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January 2020
© Diodes Incorporated
DMP2008USS
Document number: DS41287 Rev. 3 – 2
DMP2008USS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
January 2020
© Diodes Incorporated
DMP2008USS
Document number: DS41287 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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