Diodes-Incorporated-DMP2040UFDF-13

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Diodes-Incorporated-DMP2040UFDF-13
DMP2040UFDF  
P-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
0.6mm Profile
–
Ideal for Low Profile Applications  
PCB Footprint of 4mm

2  

Low Gate Threshold Voltage  
Low On-Resistance  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
I

D

max  
BV

DSS  

R

DS(ON)

max  
T

C

=
+
25°C  
-13A  
-10A  
32m
Ω @ V

GS

= -4.5V  
53m
Ω @ V

GS

= -2.5V  
-20V  
Description and Applications  
This MOSFET is designed to minimize the on-state resistance  
(R

DS(ON)

) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Mechanical Data  
Case: U-DFN2020-6 (Type F)  
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Battery Management Application  
Power Management Functions  
DC-DC Converters  
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable  
e4  
per MIL-STD-202, Method 208  
Weight: 0.0065 grams (Approximate)  
U-DFN2020-6 (Type F)  
D
G
Pin1  
S
Pin Out  
Bottom View  
Equivalent Circuit  
Bottom View  
Top View  
Ordering Information
(Note 4)  
Part Number  
DMP2040UFDF-7  
DMP2040UFDF-13  
Case  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
U-DFN2020-6 (Type F)  
U-DFN2020-6 (Type F)  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

2. See http://www.diodes.com/quality/lead_free.html

for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-
free “Green‖ products are defined as those which contain <
900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
Marking Information  
4D = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: D = 2016)  
4D  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2016  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
Code  
D
E
F
G
H
I
J
K
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 7  
August 2016  
© Diodes Incorporated  
DMP2040UFDF  
Document number: DS38984
 
Rev. 1 – 2  

DMP2040UFDF  
Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
V

DSS  

Value  
-20  
Units  
V
V
±12  
Gate-Source Voltage  
V

GSS  

Steady  
State  
T

A

= +25°C  
-6.1  
-4.9  
A
A
Continuous Drain Current (Note 6) V

GS

= -4.5V  
Continuous Drain Current (Note 7) V

GS

= -4.5V  
I

D  

T

A

= +70°C  
T

C

= +25°C  
T

C

= +70°C  
Steady  
State  
-13  
-10  
I

D  

Pulsed Drain Current (10
μ
s pulse, duty cycle = 1%)  
Continuous Source-Drain Diode Current (Note 6)  
Avalanche Current (Note 8) L = 0.1mH  
A
A
I

DM  

I

S  

I

AS  

-17  
14  
A
Avalanche Energy (Note 8) L = 0.1mH  
mJ  
E

AS  

Thermal Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
0.8  
149  
95  
1.8  
Units  
W
Total Power Dissipation (Note 5)  
T

A

= +25°C  
Steady State  
t<10s  
P

D  

R

θ
JA  

P

D  

Thermal Resistance, Junction to Ambient (Note 5)  
Total Power Dissipation (Note 6)  
°C/W  
W
T

A

= +25°C  
Steady State  
t<10s  
70  
45  
Thermal Resistance, Junction to Ambient (Note 6)  
°C/W  
R

θ
JA  

Thermal Resistance, Junction to Case (Note 7)  
Operating and Storage Temperature Range  
Steady State  
16  
°C/W  
°C  
R

θ
JC  

-55 to +150  
T

J,

T

STG  

Electrical Characteristics
(T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 9)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-20  
  
V
BV

DSS  

I

DSS  

  
-1  
V

GS

= 0V, I

D

= -250µA  
V

DS

= -16V, V

GS

= 0V  
V

GS

= ±12V, V

DS

= 0V  
µA  
nA  
I

GSS  

100  
ON CHARACTERISTICS (Note 9)  
Gate Threshold Voltage  
-0.6  
-1.5  
32  
V
m
Ω  
V
V

GS(TH)  

R

DS(ON)  

V

SD  

22  
V

DS

= V

GS

, I

D

= -250µA  
V

GS

= -4.5V, I

D

= -8.9A  
V

GS

= -2.5V, I

D

= -6.9A  
V

GS

= 0V, I

S

= -2.9A  
Static Drain-Source On-Resistance  
31  
53  
Diode Forward Voltage  
-0.7  
-1.2  
DYNAMIC CHARACTERISTICS (Note 10)  
Input Capacitance  
C

iss  

C

oss  

C

rss  

R

G  

  
  
—
  
—
  
  
  
—
  
—
  
V

DS

= -10V, V

GS

= 0V,  
f = 1.0MHz  
Output Capacitance  
pF  
Reverse Transfer Capacitance  
Gate Resistance  
Ω
V

DS

= 0V, V

GS

= 0V, f = 1.0MHz  
Total Gate Charge (V

GS

= -4.5V)  
Total Gate Charge (V

GS

= -8V)  
Gate-Source Charge  
Q

g  

Q

g  

nC
  
V

DS

= -6V, I

D

= -8.9A  
Q

gs  

Q

gd  

t

D(ON)  

t

R  

Gate-Drain Charge  
Turn-On Delay Time  
Turn-On Rise Time  
V

DD

= -6V, R

L

= 6
Ω  
ns  
Turn-Off Delay Time  
V

GS

= -4.5V, R

G

= 6
Ω
, I

D

= -1A  
t

D(OFF)  

t

F  

Turn-Off Fall Time  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
ns  
t

RR  

I

F

= -8.9A, di/dt = -10
0A/μs  
I

F

= -8.9A, di/dt = -10
0A/μs  
nC  
Q

RR  

Notes:  
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.  
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.  
7. Thermal resistance from junction to soldering point (on the exposed drain pad).  
8. I

AS

and E

AS

rating are based on low frequency and duty cycles to keep T

J

= +25°C
 
.  
9. Short duration pulse test used to minimize self-heating effect.  
10. Guaranteed by design. Not subject to product testing.  
2 of 7  
August 2016  
© Diodes Incorporated  
DMP2040UFDF  
Document number: DS38984
 
Rev. 1 – 2  

DMP2040UFDF  
20.0  
15.0  
10.0  
5.0  
20  
15  
10  
5
V

GS

= -2.5V  
V

GS

= -3.0V  
V

DS

= -5V  
V

GS

= -2.0V  
V

GS

= -4.0V  
V

GS

= -4.5V  
V

GS

= -1.5V  
V

GS

= -1.0V  
T

J

= 150

o

C  
T

J

= 85

o

C  
T

J

= 25

o

C  
T

J

= 125

o

C  
V

GS

= -1.2V  
T

J

= -55

o

C  
0
0.0  
0
0.5  
1
1.5  
2
2.5  
3
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
V

GS

, GATE-SOURCE VOLTAGE (V)  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. Typical Output Characteristic  
Figure 2. Typical Transfer Characteristic  
0.05  
0.04  
0.03  
0.02  
0.01  
0
0.5  
0.4  
0.3  
0.2  
0.1  
0
I

D

= -8.9A  
V

GS

= -2.5V  
V

GS

= -4.5V  
I

D

= -6.9A  
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
3
6
9
12  
15  
I

D

, DRAIN-SOURCE CURRENT (A)  
Figure 3. Typical On-Resistance vs Drain Current  
and Gate Voltage  
V

GS

, GATE-SOURCE VOLTAGE (V)  
Figure 4. Typical Transfer Characteristic  
0.05  
0.04  
0.03  
0.02  
0.01  
0
1.5  
1.2  
0.9  
0.6  
V

GS

= – 4.5V  
V

GS

= -4.5V, I

D

= -8.9A  
T

J

= 150

o

C  
T

J

= 125

o

C  
T

J

= 85

o

C  
T

J

= 25

o

C  
T

J

= -55

o

C  
V

GS

= -2.5V, I

D

= -6.9A  
-50 -25  
0
25  
T

J

, JUNCTION TEMPERATURE (
℃
)  
Figure 6. On-Resistance Variation with Temperature  
50  
75 100
 
125 150  
0
5
10  
15  
20  
I

D

, DRAIN CURRENT (A)  
Figure 5. Typical On-Resistance vs Drain Current and  
Temperature  
3 of 7  
August 2016  
© Diodes Incorporated  
DMP2040UFDF  
Document number: DS38984
 
Rev. 1 – 2  

DMP2040UFDF  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0
1.2  
1
V

GS

= -2.5V, I

D

= -6.9A  
I

D

= -1mA  
0.8  
0.6  
0.4  
0.2  
0
I

D

= -250µA  
V

GS

= -4.5V, I

D

= -8.9A  
-50 -25  
0
25  
50  
75 100
 
125 150  
-50  
-25  
0
25  
50  
75  
100 125 150  
T

J

, JUNCTION TEMPERATURE (
℃
)  
T

J

, JUNCTION TEMPERATURE (
℃
)  
Figure 8. Gate Threshold Variation vs Junciton  
Temperature  
Figure 7. On-Resistance Variation with Temperature  
V

GS

= 0V  
20  
15  
10  
5
10000  
1000  
100  
f = 1MHz  
C

iss  

T

J

= 150

o

C  
T

J

= 125

o

C  
T

J

= 85

o

C  
C

oss  

C

rss  

T

J

= 25

o

C  
T

J

= -55

o

C  
0
10  
0
0.3  
0.6  
0.9  
1.2  
0
2
4
6
8
10 12 14 16 18 20  
V

SD

, SOURCE-DRAIN VOLTAGE (V)  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 10. Typical Junction Capacitance  
Figure 9. Diode Forward Voltage vs. Current  
8
7
6
5
4
3
2
1
0
100  
10  
R

DS(ON)  

Limited  
P

W

= 1ms  
P

W

= 100µs  
1
DC  
P

W

= 10s  
P

W

= 1s  
T

J(Max)

= 150
℃  
T

C

= 25
℃  
Single Pulse  
V

DS

= -6V, I

D

= -8.9A  
0.1  
0.01  
P

W

= 100ms  
DUT on 1*MRP Board  
V

GS

= -4.5V  
P

W

= 10ms  
10  
0
2
4
6
8
10  
12  
14  
16  
0.1  
1
100  
Q

g

(nC)  
Figure 11. Gate Charge  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 12. SOA, Safe Operation Area  
4 of 7  
August 2016  
© Diodes Incorporated  
DMP2040UFDF  
Document number: DS38984
 
Rev. 1 – 2  

DMP2040UFDF  
1
D=0.9  
D=0.7  
D=0.5  
D=0.3  
0.1  
D=0.1  
D=0.05  
0.01  
D=0.02  
D=0.01  
D=0.005  
R

θ
JA

(t) = r(t) * R

θ
JA  

R

θ
JA

= 147
℃
/W  
Duty Cycle, D = t1/t2  
D=Single Pulse  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, PULSE DURATION TIME (sec)  
Figure 13. Transient Thermal Resistance  
5 of 7  
August 2016  
© Diodes Incorporated  
DMP2040UFDF  
Document number: DS38984
 
Rev. 1 – 2  

DMP2040UFDF  
Package Outline Dimension  
U-DFN2020-6 (Type
 
F)  
U-DFN2020-6  
(Type F)  
A3  
A1  
A
Dim  
A
A1  
A3  
b
Min Max  
0.57 0.63  
0.00 0.05  
Typ  
0.60  
0.03  
0.15  
0.30  
2.00  
0.95  
0.38  
2.00  
1.15  
0.70  
Seating Plane  
–
–
0.25 0.35  
1.95 2.05  
0.85 1.05  
D
D
D2  
e3  
k2  
e4  
D2a
0.33 0.43  
E
E2  
E2a  
e
e2  
e3  
e4  
k
1.95 2.05  
1.05 1.25  
0.65 0.75  
D2a  
E2a  
0.65 BSC  
0.863 BSC  
0.70 BSC  
0.325 BSC  
0.37 BSC  
0.15 BSC  
z2  
D2  
E
E2  
k1  
k1  
k2  
L
e2  
L
k
0.36 BSC  
0.225 0.325
 
0.275  
0.20 BSC  
z1  
z
z1  
z2  
0.110 BSC  
0.20 BSC  
e
b
z( 4x)  
All Dimensions in mm  
Suggested Pad Layout  
U-DFN2020-6 (Type
 
F)  
X3  
Value  
Dimensions  
Y
C
X
(in mm)  
0.650  
0.400  
0.480  
0.950  
1.700  
0.425  
0.800  
1.150  
1.450  
2.300  
C
X
X1  
X2  
X3  
Y
Y1  
Y2  
Y3  
Y4  
Y3  
Y2  
Y1 Y4  
X1  
Pin1  
X2  
6 of 7  
August 2016  
© Diodes Incorporated  
DMP2040UFDF  
Document number: DS38984
 
Rev. 1 – 2  

DMP2040UFDF  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending.
 
Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference.
 
Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2016, Diodes Incorporated  
7 of 7  
August 2016  
© Diodes Incorporated  
DMP2040UFDF  
Document number: DS38984
 
Rev. 1 – 2  

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