Diodes-Incorporated-DMP2040UND-7
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DMP2040UND
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
representative.
I
D
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
-5.3A
-3.9A
36m
@ V
GS
= -4.5V
60m
@ V
GS
= -2.5V
-20V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Mechanical Data
Backlighting
Power Management Functions
DC-DC Converters
®
Case: POWERDI
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals Connections Indicator: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Lead
e3
Frame. Solderable
per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
POWERDI3333-8 (Type UXB)
D1
D2
Pin 1
S1
G1
S2
G2
G1
G2
D1
S1
D1
D2
S2
D2
P-Channel MOSFET
P-Channel MOSFET
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMP2040UND-7
DMP2040UND-13
Case
Packaging
2000/Tape & Reel
3000/Tape & Reel
POWERDI3333-8 (Type UXB)
POWERDI3333-8 (Type UXB)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
C6C = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 20 for 2020)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
September 2020
© Diodes Incorporated
DMP2040UND
Document number: DS42189
Rev. 3 – 2
DMP2040UND
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Unit
V
±12
Gate-Source Voltage
V
V
GSS
Steady
State
T
A
= +25°C
-5.3
-4.2
A
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Continuous Drain Current (Note 7) V
GS
= -4.5V
I
D
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Steady
State
-13.6
-10.9
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 8) L = 0.1mH
-25
-1.9
-19
18
A
A
I
DM
I
S
I
AS
A
Avalanche Energy (Note 8) L = 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.9
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
Steady State
P
D
R
θ
JA
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
148
1.4
°C/W
W
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
88
°C/W
°C/W
°C
R
θ
JA
R
θ
JC
T
J,
T
STG
Steady State
13.2
-55 to +150
Electrical Characteristics
(T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
V
BV
DSS
I
DSS
-1
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
µA
nA
I
GSS
100
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-0.6
-1.5
36
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
28
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -8.9A
V
GS
= -2.5V, I
D
= -6.9A
V
GS
= 0V, I
S
= -2.9A
Static Drain-Source On-Resistance
60
38
Diode Forward Voltage
-1.2
-0.7
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
834
133
105
4.9
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
9.6
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
20
Q
g
nC
V
DS
= -6V, I
D
= -8.9A
1.1
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
2.6
Turn-On Delay Time
14.6
5.5
Turn-On Rise Time
V
DD
= -6V, R
L
= 6
Ω
ns
Turn-Off Delay Time
38.7
18.3
9.8
V
GS
= -4.5V, R
g
= 6
Ω
, I
D
= -1A
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= -8.9A, di/dt = -10
0A/μs
I
F
= -8.9A, di/dt = -10
0A/μs
2.7
nC
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2 of 7
September 2020
© Diodes Incorporated
DMP2040UND
Document number: DS42189
Rev. 3 – 2
DMP2040UND
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= -2.5V
V
DS
= -5V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.0V
V
GS
= -2.0V
V
GS
= -1.8V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
=-55
℃
V
GS
= -1.3V
V
GS
= -1.5V
2.5
0
0.0
0
1
2
3
0
0.5
1
1.5
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= -8.9A
I
D
= -6.9A
0.054
0.044
0.034
0.024
0.014
0.004
V
GS
= -2.5V
V
GS
= -4.5V
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
1.2
1
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -8.9A
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -2.5V, I
D
= -6.9A
T
J
= -55
℃
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
3 of 7
September 2020
© Diodes Incorporated
DMP2040UND
Document number: DS42189
Rev. 3 – 2
DMP2040UND
0.06
0.05
0.04
0.03
0.02
0.01
0
1.5
1.2
0.9
0.6
0.3
0
V
GS
= -2.5V, I
D
= -6.9A
I
D
= -1mA
I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -8.9A
-50 -25
0
25
50
75 100
125 150
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
10000
1000
100
30
25
20
15
10
5
V
GS
= 0V
f=1MHz
C
iss
C
oss
T
J
= 85
℃
T
J
= 150
℃
C
rss
T
J
= 125
℃
T
J
= 25
℃
T
J
= -55
℃
0.9 1.2
10
0
0
5
10
15
20
0
0.3
0.6
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
R
DS(ON)
LIMITED
P
W
=10ms
P
W
=1ms
P
W
=100
μ
s
6
1
P
W
=100ms
4
T
J(MAX)
=150
℃
V
DS
= -6V, I
D
= -8.9A
T
C
=25
℃
P
W
=1s
0.1
0.01
Single Pulse
2
P
W
=10s
DUT on
DC
10
1*MRP board
V
GS
= -4.5V
0
0.1
1
100
0
2
4
6
8
10 12 14 16 18 20 22
Qg (nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
September 2020
© Diodes Incorporated
DMP2040UND
Document number: DS42189
Rev. 3 – 2
DMP2040UND
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 153
℃
/W
Duty Cycle, D = t1 / t2
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000 10000
10000
0
1
000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
September 2020
© Diodes Incorporated
DMP2040UND
Document number: DS42189
Rev. 3 – 2
DMP2040UND
Package Outline Dimensions
POWERDI3333-8
(Type UXB)
A
D
D1
A1
POWERDI3333-8
(Type UXB)
Dim Min
Max Typ
E1 E
A
0.75 0.85 0.80
A1
0.00 0.05
—
b
c
D
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
D1
2.95 3.15 3.05
D2
0.10 0.35 0.23
c
E
3.20 3.40 3.30
L
E1
2.95 3.15 3.05
E2
0.10 0.30 0.20
e
L
a
D2
0.65
0.35 0.55 0.45
0
°
12
°
10
°
E2
All Dimensions in mm
L
b
e
Suggested Pad Layout
POWERDI3333-8
(Type UXB)
X1
Y
Y
Y1
Dimensions Value
(in mm)
C
X
0.650
0.420
2.370
0.730
3.500
X1
Y
Y1
X
C
6 of 7
September 2020
© Diodes Incorporated
DMP2040UND
Document number: DS42189
Rev. 3 – 2
DMP2040UND
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
September 2020
© Diodes Incorporated
DMP2040UND
Document number: DS42189
Rev. 3 – 2
