Diodes-Incorporated-DMP2045U-13

DMP2045U  

P-CHANNEL ENHANCEMENT MODE MOSFET  

Product Summary  

Features  

















Low On-Resistance  

I

D  

T

A

= +25°C  

-4.3A  

BV

DSS  

R

DS(ON) Max  

Low Input Capacitance  

Fast Switching Speed  

Low Input/Output Leakage  

45m

Ω

@ V

GS

= -4.5V  

58m

Ω

@ V

GS

= -2.5V  

90m

Ω

@ V

GS

= -1.8V  

-20V  

-3.8A  

ESD Protected Gate  

-3.1A  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

For automotive applications requiring specific change control  

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and  

manufactured in IATF 16949 certified facilities), please  

or your local Diodes representative.  

An Automotive-Compliant Part is Available Under Separate  

Datasheet

Description  

This new generation MOSFET is designed to minimize the on-state  

resistance (R

DS(ON)

) yet maintain superior switching performance,  

making it ideal for high efficiency power management applications.  



Applications  





DC-DC Converters  

Power Management Functions  

Mechanical Data  





Case: SOT23  

Case Material: Molded Plastic, “Green” Molding Compound.  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish

⎯

Matte Tin Annealed over Copper Leadframe.  





e3  

Solderable per MIL-STD-202, Method 208  





Terminals Connections: See Diagram Below  

Weight: 0.009 grams (Approximate)  

D

SOT23 (Standard)  

D

G

S

G

ESD protected Gate  

Gate Protection  

Diode  

S

Equivalent Circuit  

Top View  

Top View  

Ordering Information

(Note 4)  

Part Number  

DMP2045U-7  

DMP2045U-13  

Compliance  

Standard  

Standard  

Case  

SOT23 (Standard)  

SOT23 (Standard)  

Packaging  

3,000/Tape & Reel  

10,000/Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

free/ for more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

Marking Information  

45U = Product Type Marking Code  

YM or

 

= Date Code Marking  

YM  

= Year (ex: I = 2021)  

M = Month (ex: 9 = September)  

45U  

Y or  

Y

Date Code Key  

Year  

2017  

…

2021  

2022  

2023  

2024  

2025  

2026  

2027  

2028  

2029  

2030  

Code  

E

…

I

J

K

L

M

N

O

P

R

S

Aug  

Sep  

Oct  

Nov  

Dec  

Month  

Code  

Jan  

Feb  

Mar  

Apr  

May  

Jun  

Jul  

1

2

3

4

5

6

7

8

9

O

N

D

1 of 7  

July 2021  

© Diodes Incorporated  

DMP2045U  

Document number: DS40478 Rev. 4 – 2  

DMP2045U  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

Value  

-20  

Unit  

V

Gate-Source Voltage  

±8  

V

V

GSS  

Steady  

State  

T

A

= +25°C  

T

A

= +70°C  

-4.3  

-3.5  

A

Continuous Drain Current (Note 6) V

GS

= -4.5V  

I

D  

Maximum Continuous Body Diode Forward Current (Note 6)  

-1.2  

-25  

A

A

I

S  

Pulsed Drain Current (10

μ

s Pulse, Duty Cycle = 1%)  

I

DM  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

Value  

0.8  

154  

Unit  

W

Total Power Dissipation (Note 5)  

P

D  

R



JA  

Thermal Resistance, Junction to Ambient (Note 5)  

Total Power Dissipation (Note 6)  

Steady State  

Steady State  

°C/W  

W

1.2  

P

D  

Thermal Resistance, Junction to Ambient (Note 6)  

Operating and Storage Temperature Range  

98  

°C/W  

°C  

R



JA  

-55 to +150  

T

J,

T

STG  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 7)  

Drain-Source Breakdown Voltage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

—

—



 

—

—

-1  

-20  

—

  

—

V

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  

V

DS

= -20V, V

GS

= 0V  

V

GS

= ±8.0V, V

DS

= 0V  

µA  

µA  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

T

J

= +25°C  

±10  

I

GSS  

ON CHARACTERISTICS (Note 7)  

Gate Threshold Voltage  

-0.3  

—

—

32  

-1.0  

45  

V

mΩ  

V

V

GS(TH)  

R

DS(ON)  

V

SD  

V

DS

= V

GS

, I

D

= -250

μ

A  

V

GS

= -4.5V, I

D

= -4.0A  

V

GS

= -2.5V, I

D

= -3.5A  

V

GS

= -1.8V, I

D

= -1.0A  

V

GS

= 0V, I

S

= -1.0A  

—

Static Drain-Source On-Resistance  

42  

58  

—

54  

90  

Diode Forward Voltage  

—

-0.7  

-1.2  

DYNAMIC CHARACTERISTICS (Note 8)  

Input Capacitance  

—

—

—

—

—

—

—

—

—

—

—

—

—

634  

81  

—

—

—

—

—

—

—

—

—

—

—

—

—

pF  

pF  

pF  

Ω

C

iss  

C

oss  

C

rss  

R

g  

V

DS

= -10V, V

GS

= 0V  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Gate Resistance  

66  

20  

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz  

Total Gate Charge  

6.8  

0.7  

1.6  

4.2  

3.4  

23  

nC  

nC  

nC  

ns  

ns  

ns  

ns  

ns  

nC  

Q

g  

V

GS

= -4.5V, V

DS

= -10V  

I

D

= -4A  

Gate-Source Charge  

Gate-Drain Charge  

Q

gs  

Q

gd  

t

D(ON)  

t

R  

Turn-On Delay Time  

Turn-On Rise Time  

Turn-Off Delay Time  

Turn-Off Fall Time  

V

DD

= -10V, V

GS

= -4.5V,  

R

L

= 3.3Ω, R

G

= 1Ω  

t

D(OFF)  

t

F  

9.6  

1.8  

9.4  

Reverse Recovery Time  

Reverse Recovery Charge  

t

RR  

I

F

= -1.0A, di/dt = 1

00A/μs  

I

F

= -1.0A, di/dt = 1

00A/μs  

Q

RR  

Notes:  

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  

7. Short duration pulse test used to minimize self-heating effect.  

8. Guaranteed by design. Not subject to product testing.  

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July 2021  

© Diodes Incorporated  

DMP2045U  

Document number: DS40478 Rev. 4 – 2  

DMP2045U  

20.0  

18.0  

16.0  

14.0  

12.0  

10.0  

8.0  

15  

12  

9

V

GS

= -2.5V  

V

GS

= -3.0V  

V

DS

= -5V  

V

GS

= -2.0V  

V

GS

= -1.8V  

V

GS

= -4.0V  

V

GS

= -4.5V  

6

V

GS

= -1.5V  

6.0  

T

J

= 85

℃

 

T

J

= 25

℃  

4.0  

3

T

J

= 150

℃  

T

J

= 125

℃  

0.5  

2.0  

V

GS

= -1.2V  

2.5  

T

J

= -55

℃  

0.0  

0

0

0.5  

1

1.5  

2

3

0

1

1.5  

2

V

GS

, GATE-SOURCE VOLTAGE (V)  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 1. Typical Output Characteristic  

Figure 2. Typical Transfer Characteristic  

0.1  

0.08  

0.06  

0.04  

0.02  

0

0.5  

0.45  

0.4  

I

D

= -4.0A  

V

GS

= -1.8V  

V

GS

= -2.5V  

0.35  

0.3  

0.25  

0.2  

I

D

= -3.5A  

0.15  

0.1  

V

GS

= -4.5V  

0.05  

0

0

2

4

6

8

0

4

8

12  

16  

20  

I

D

, DRAIN-SOURCE CURRENT (A)  

V

GS

, GATE-SOURCE VOLTAGE (V)  

Figure 3. Typical On-Resistance vs. Drain Current and  

Gate Voltage  

Figure 4. Typical Transfer Characteristic  

0.06  

0.05  

0.04  

0.03  

0.02  

0.01  

1.8  

1.6  

1.4  

1.2  

1

V

GS

= -4.5V  

V

GS

= -4.5V, I

D

= -4.0A  

V

GS

= -2.5V, I

D

= -3.5A  

T

J

= 150

℃  

T

J

= 125

℃  

T

J

= 85

℃  

T

J

= 25

℃  

T

J

= -55

℃  

V

GS

= -1.8V, I

D

= -2.0A  

0.8  

0.6  

-50 -25  

0

25  

50  

75  

100 125 150  

0

5

10  

15  

20  

I

D

, DRAIN CURRENT (A)  

Figure 5. Typical On-Resistance vs. Drain Current  

and Junction Temperature  

T

J

, JUNCTION TEMPERATURE (

℃

)  

Figure 6. On-Resistance Variation with Junction  

Temperature  

3 of 7  

July 2021  

© Diodes Incorporated  

DMP2045U  

Document number: DS40478 Rev. 4 – 2  

DMP2045U  

0.09  

0.08  

0.07  

0.06  

0.05  

0.04  

0.03  

0.02  

0.01  

0.8  

0.7  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0

V

GS

= -1.8V, I

D

= -2.0A  

V

GS

= -2.5V, I

D

= -3.5A  

I

D

= -1mA  

I

D

= -250

μ

A  

V

GS

= -4.5V, I

D

= -4.0A  

-50 -25  

0

25  

50  

75  

100 125 150  

-50 -25  

0

25  

50  

75 100

 

125 150  

T

J

, JUNCTION TEMPERATURE (

℃

)  

Figure 8. Gate Threshold Variation vs. Junction  

Temperature  

T

J

, JUNCTION TEMPERATURE (

℃

)  

Figure 7. On-Resistance Variation with Junction  

Temperature  

20  

15  

10  

5

10000  

1000  

100  

f = 1MHz  

V

GS

= 0V  

C

iss  

C

oss  

T

J

= 150

o

C  

T

J

= 85

o

C  

C

rss  

T

J

= 125

o

C  

T

J

= 25

o

C  

T

J

= -55

o

C  

0

10  

0

0.3  

0.6  

0.9  

1.2  

1.5  

0

4

8

12  

16  

20  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 10. Typical Junction Capacitance  

V

SD

, SOURCE-DRAIN VOLTAGE (V)  

Figure 9. Diode Forward Voltage vs. Current  

1000  

100  

10  

8

6

4

2

0

R

DS(ON)  

Limited  

P

W

= 1ms  

P

W

= 10ms  

P

W

= 100ms  

P

W

= 100µs  

1

V

DS

= -10V, I

D

= -4A  

T

J(Max)

= 150

℃

 

T

C

= 25

℃  

Single Pulse  

DUT on 1*MRP  

Board  

P

W

= 1s  

0.1  

0.01  

P

W

= 10s  

DC  

10  

V

GS

= -4.5V  

0

2

4

6

8

10  

12  

0.1  

1

100  

Q

g

(nC)  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Figure 12. SOA, Safe Operation Area  

Figure 11. Gate Charge  

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July 2021  

© Diodes Incorporated  

DMP2045U  

Document number: DS40478 Rev. 4 – 2  

DMP2045U  

1

D = 0.7  

D = 0.5  

D = 0.9  

D = 0.3  

0.1  

D = 0.1  

D = 0.05  

D = 0.02  

D = 0.01  

0.01  

D = 0.005  

D = Single Pulse  

R

θ

JA

(t) = r(t) * R

θ

JA  

R

θ

JA

= 151

℃

/W  

Duty Cycle, D = t1 / t2  

0.001  

0.000001 0.00001

 

0.0001 0.001  

0.01  

0.1  

1

10  

100  

1000  

10000 100000

 

1000000  

t1, PULSE DURATION TIME (sec)  

Figure 13. Transient Thermal Resistance  

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July 2021  

© Diodes Incorporated  

DMP2045U  

Document number: DS40478 Rev. 4 – 2  

DMP2045U  

Package Outline Dimensions  

Please see

for the latest version.  

SOT23 (Standard)  

D

GAUGE PLA

N

E  

0.25  

SOT23 (Standard)  

A1  

Dim  

A

A1  

A2  

b

Min  

0.90  

0.00  

0.85  

0.30  

Max  

Typ  

A2  

A

1.15 1.025  

0.10 0.05  

1.10 0.975  

0.51 0.40  

c

a

L1  

L

b

c

0.080 0.202

 

0.11  

D

E

E1  

e

e1  

F

L1  

L

a

2.80  

2.25  

1.20  

0.89  

1.78  

0.40  

0.45  

0.25  

0°  

3.00  

2.55  

1.40  

1.03 0.915  

2.05 1.83  

0.60 0.535  

0.61  

0.55  

8°  

2.90  

2.40  

1.30  

E

E1  

0.55  

0.40  

—  

e

All Dimensions in mm  

e1  

F

Suggested Pad Layout  

Please see

for the latest version.  

SOT23 (Standard)  

Y

Dimensions Value

 

(in mm)  

C

X

2.0  

0.8  

Y1  

C

X1  

Y

1.35  

0.9  

Y1  

2.9  

X

X1  

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July 2021  

© Diodes Incorporated  

DMP2045U  

Document number: DS40478 Rev. 4 – 2  

DMP2045U  

IMPORTANT NOTICE  

DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,  

1.  

WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED  

WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY  

INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

2.  

The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products  

described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any  

product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes  

products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for  

(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended  

applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well  

as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality  

control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with  

their applications.  

3.  

Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes  

from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such  

use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al

l damages and  

liabilities.  

4.  

Products described herein may be covered by one or more United States, international or foreign patents and pending patent  

applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks  

and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties  

(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu

ment.  

5.  

Dio

des  

products  

are  

provided  

subject  

to  

Diodes’  

Standard  

Terms  

and  

Conditions  

of  

Sale  

or other applicable terms. This document does not  

alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any  

products purchased through unauthorized sales channel.  

6.  

Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is  

prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or  

regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or  

penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless  

against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with  

the applicable laws and regulations, as well as any unintended or unauthorized application.  

7.  

While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain  

technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and  

Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make  

modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described  

herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document  

is the final and determinative format released by Diodes.  

8.  

Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is  

prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such  

unauthorized use.  

Copyright © 2021 Diodes Incorporated  

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July 2021  

© Diodes Incorporated  

DMP2045U  

Document number: DS40478 Rev. 4 – 2