Diodes-Incorporated-DMP2065UFDB-13
| Part # | Diodes-Incorporated-DMP2065UFDB-13 |
Download  | Diodes-Incorporated-DMP2065UFDB-13 |
DMP2065UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
T
A
= +25°C
BV
DSS
R
DS(ON)
max
Low Input Capacitance
Fast Switching Speed
-4.5A
-3.2A
50
mΩ @V
GS
= -4.5V
100
mΩ @V
GS
= -2.5V
Low Input/Output Leakage
-20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Mechanical Data
Description and Applications
Case: U-DFN2020-6
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu Annealed over Copper Leadframe.
Battery Charging
e4
Solderable per MIL-STD-202, Method 208
Power Management Functions
DC-DC Converters
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Portable Power Adaptors
U-DFN2020-6 (Type B)
D1
S1
D2
S2
G2
D2
D1
D1
G1
G2
D2
G1
S1
S2
Pin1
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMP2065UFDB
-7
DMP2065UFDB
-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
1 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
DMP2065UFDB
Marking Information
Site 1
P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
P5
M = Month (ex: 9 = September)
Date Code Key
Year
2016
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
D
…
H
I
J
K
L
M
N
O
P
R
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2
P5 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
P
5
Date Code Key
Year
2016
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
6
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
2 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
DMP2065UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Unit
V
Gate-Source Voltage
±12
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +85°C
-4.5
-3.6
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
-25
-1.4
-13
9
A
A
I
DM
I
S
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
A
I
AS
E
AS
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
0.74
171
131
1.54
82
Unit
Total Power Dissipation (Note 5)
W
T
A
= +25°C
Steady State
t<10s
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
θ
JA
P
D
T
A
= +25°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
60
°C/W
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
13
R
θ
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
-1.0
±100
µA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
T
J
= +25°C
—
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.4
—
—
40
-1.0
50
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.0A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -1.8V, I
D
= -1.6A
V
GS
= -1.5V, I
D
= -1.0A
V
GS
= 0V, I
S
= -1A
55
100
150
200
-1.1
Static Drain-Source On-Resistance
75
95
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
-0.75
—
—
—
—
—
—
—
—
—
—
—
752
87
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
G
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
78
15.2
9.1
1.2
1.9
5.4
8.3
47
V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Q
g
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -3.5A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
DS
= -4V, V
GS
= -4.5V,
R
G
= 6
, I
D
= -1A
Turn-Off Delay Time
Turn-Off Fall Time
t
D(OFF)
t
F
20
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
3 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
DMP2065UFDB
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20
18
16
14
12
10
8
V
DS
= -5V
V
GS
= -3.0V
V
GS
= -4.5V
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
= -2.0V
V
GS
= -1.8V
V
GS
= -1.5V
6
6.0
4
4.0
2
2.0
V
GS
= -0.9V
V
GS
= -1.0V
1.5
0
0.0
0.5
1
1.5
2
2.5
3
0
0.5
1
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.15
0.12
0.09
0.06
0.03
0
I
D
= -2.0A
V
GS
= -1.8V
V
GS
= -2.5V
V
GS
= -4.5V
I
D
= -1.0A
0
2
4
6
8
10
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1.6
1.4
1.2
1
V
GS
= -4.5V, I
D
= -2.0A
V
GS
= -4.5V
T
J
= 150
o
C
T
J
= 85
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
V
GS
= -2.5V, I
D
= -2.0A
0.8
0.6
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
4 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
DMP2065UFDB
1
0.8
0.6
0.4
0.2
0.1
0.08
0.06
0.04
0.02
I
D
= -1mA
V
GS
= -2.5V, I
D
= -2.0A
I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.0A
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
10000
20
15
10
5
f = 1MHz
V
GS
= 0V
C
iss
1000
100
10
C
oss
T
J
= 150
o
C
T
J
= 85
o
C
T
J
= 125
o
C
C
rss
T
J
= 25
o
C
T
J
= -55
o
C
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
100
10
8
6
4
2
0
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 100µs
1
DC
P
W
= 10s
P
W
= 1s
V
DS
= -4V, I
D
= -3.5A
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= -4.5V
0.1
0.01
P
W
= 100ms
P
W
= 10ms
10
0
2
4
6
8
10 12 14 16 18
Q
g
(nC)
Figure 11. Gate Charge
0.1
1
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
5 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
DMP2065UFDB
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 171
℃
/W
Duty Cycle, D = t1/t2
D=0.005
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
6 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
DMP2065UFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
Seating Plane
U-DFN2020-6
Type B
Min Max Typ
0.545 0.605 0.575
0.00 0.05 0.02
Dim
A
A1
A3
b
D
D2
e
D
D2
D2
–
–
0.13
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
R
0
.150
–
–
0.65
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
z1
E
E2
z1
–
–
0.45
L
z
z1
0.25 0.35 0.30
k
–
–
–
–
0.225
0.175
All Dimensions in mm
L
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
C
G
G1
X
X1
X2
Y
Y1
Y2
X1(2x)
Y1(2x)
Y2
G
Y
G1
X
7 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
DMP2065UFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
January 2020
© Diodes Incorporated
DMP2065UFDB
Document number: DS36745 Rev. 2 – 2
