Diodes-Incorporated-DMP2075UFDB-7
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DMP2075UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
I
D
Max
T
A
= +25°C
-3.8A
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
75m
Ω
@ V
GS
= -4.5V
137m
Ω @ V
GS
= -2.5V
Low Profile, 0.6mm Max Height
-20V
-3.0A
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This MOSFET is designed to minimize on-state resistance (R
DS(ON)
)
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Applications
Mechanical Data
Load Switch
Case: U-DFN2020-6
Power Management Functions
Portable Power Adaptors
Case Material:
Molded Plastic, “Green” Molding Compound
.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
e4
MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
S2
G2
D2
D1
D1
D2
G1
S1
Pin1
Q1 P-CHANNEL MOSFET
Q2 P-CHANNEL MOSFET
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP2075UFDB
-7
DMP2075UFDB
-13
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900
ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
1 of 8
February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
DMP2075UFDB
Marking Information
Site 1
U-DFN2020-6 (Type B)
O3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
O3
M = Month (ex: 9 = September)
Date Code Key
Year
2017
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
E
…
H
I
J
K
L
M
N
O
P
R
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
Site 2
O3 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
O
3
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2017
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
7
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
A-Z
27-52
53
a-z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
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February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
DMP2075UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Unit
V
Gate-Source Voltage
±8
V
V
GSS
Steady
State
-3.8
-3.0
T
A
= +25°C
T
A
= +70°C
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
I
D
-1.0
-25
-13
8.5
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
A
A
I
S
I
DM
I
AS
E
AS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
0.7
178
Unit
W
°C/W
W
T
A
= +25°C
Steady State
P
D
R
θ
JA
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
1.4
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
92
R
θ
JA
R
θ
JC
T
J,
T
STG
°C/W
°C
22
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±6.4V, V
DS
= 0V
-1.0
±10
μA
μA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
I
GSS
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
-0.35
—
—
53
-1.4
75
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -2.9A
V
GS
= -2.5V, I
D
= -2.3A
V
GS
= 0V, I
S
= -3.0A
Static Drain-Source On-Resistance
64
—
137
-1.2
-0.7
Diode Forward Voltage
—
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
642
98
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
87
26.5
8.8
15
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -10V, I
D
= -3.7A
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Q
g
0.9
2.9
5.5
22.6
34.1
34.3
13
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 3.3
Ω, R
g
= 1
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
RR
I
S
= -3.0A, dI/dt = 100A/
μ
s
I
S
= -3.0A, dI/dt = 100A/
μ
s
3.3
Q
RR
Notes: 5.
Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided
6.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
DMP2075UFDB
20
15
10
5
10
8
V
= -8V
GS
V
= -5.0V
DS
V
= -4.5V
GS
V
= -2.5V
GS
V
= -3.0V
GS
V
= -2.0V
GS
6
T
J
= 150°C
4
T
= 125°C
= 85°C
T
= 25°C
J
J
V
= -1.5V
= -1.2V
GS
T
J
T
= -55°C
J
2
V
GS
V
= -1.0V
GS
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
Figure 2
T
y
pical Transfer Characteristics
150
120
90
60
30
0
500
450
400
350
300
250
200
I
= -2.9A
D
I
= -2.3A
D
V
= -2.5V
GS
V
= -4.5V
GS
150
100
50
0
0
5
10
15
20
0
1
2
3
4
5
6
7
8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
80
70
60
50
40
30
20
2
V
= -4.5V
GS
1.8
1.6
1.4
1.2
1
T
= 125°C
= 25°C
T
= 150°C
= 85°C
J
J
T
T
J
J
T
= -55°C
V
= -4.5V
= -2.9A
J
GS
I
D
V
= -2.5V
GS
I
= -2.3A
D
0.8
0.6
0.4
0
5
10
15
20
–
5
0
–
2
5
0
25
50
75 100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
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February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
DMP2075UFDB
90
80
70
60
50
40
30
20
10
0
0.8
0.6
0.4
0.2
0
V
= -2.5V
GS
I
= -2.5A
D
I
= -1mA
D
V
= -4.5V
GS
I
= -2.9A
D
I
= -250µA
D
–
5
0
–
2
5
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE ( C)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
20
15
10
5
10000
f=
1
MHz
1000
C
iss
T
= 150°C
J
T
= 25°C
J
T
= 125°C
= 85°C
J
T
= -55°C
J
C
T
o
s
s
J
100
C
r
s
s
0
10
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
5
10
15
20
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
8
6
4
2
0
100
10
1
R
DS(ON)
Limited
P
= 10µs
V
I
= -10V
W
DS
)
= -4A
D
(
DC
P
= 10s
P
W
I
= 1s
W
P
= 100ms
W
,
I
T
J(MAX)
= 150°C
T
C
= 25°C
0.1
P
= 10ms
P
W
V
GS
=- 4.5V
Single Pulse
DUT on 1 * MRP Board
= 1ms
W
0.01
0
2
4
6
8
10
12
14
16
0.1
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
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February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
DMP2075UFDB
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
JA
(t) = r(t) *
R
JA
R
JA
= 178°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
DMP2075UFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
Seating Plane
U-DFN2020-6
(Type B)
Dim
A
A1
A3
b
D
D2
e
Min
Max Typ
D
0.545 0.605 0.575
0.00 0.05 0.02
–
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
D2
D2
–
0.13
R
0
.150
–
–
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
E
E2
z1
–
–
0.45
k
L
0.25 0.35 0.30
z
z1
–
–
–
–
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y2
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X1(2x)
Y1(2x)
Y2
G
Y
G1
X
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February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
DMP2075UFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
February 2020
© Diodes Incorporated
DMP2075UFDB
Document number: DS40150 Rev. 6 – 2
