Diodes-Incorporated-DMP2090UFDB-7
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DMP2090UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
PCB Footprint of 4mm
2
I
D
T
A
= +25°C
-3.2A
BV
DSS
R
D1D2 max
Low On-Resistance
Low Input Capacitance
90m
Ω
@ V
GS
= -4.5V
120m
Ω
@ V
GS
= -2.5V
-20V
Low Profile, 0.6mm Maximum Height
-2.7A
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Mechanical Data
Description and Applications
Case: U-DFN2020-6
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, which makes it
ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
Load Switch
e4
MIL-STD-202, Method 208
Power Management Functions
Portable Power Adaptors
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
S2
G2
D2
D1
D1
D2
ESD protected Gate
G1
S1
Pin1
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMP2090UFDB
-7
DMP2090UFDB
-13
Case
Packaging
3000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
1 of 8
December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
DMP2090UFDB
Marking Information
Site 1:
E4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
E4
M = Month (ex: 9 = September)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
G
H
I
J
K
L
M
N
O
P
R
S
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2:
E4 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 9 = 2019)
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
E4
YWX
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
Code
9
0
1
2
3
4
5
6
7
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
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December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
DMP2090UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Unit
V
Value
-20
Gate-Source Voltage
V
V
GSS
±8
Steady
T
A
= +25°C
T
A
= +70°C
-3.2
-2.5
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
State
I
D
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
-1.9
-22
-11
7
A
A
I
S
I
DM
I
AS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
E
AS
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
0.79
Unit
W
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
159
°C/W
W
R
ϴ
JA
P
D
1.39
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
90
°C/W
°C
R
ϴ
JA
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
-1.0
±10
μA
μ
A
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.3
—
—
37
-1.0
90
V
m
Ω
V
V
GS(TH)
R
D1D2
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -4A
V
GS
= -2.5V, I
D
= -3.5A
V
GS
= 0V, I
S
= -1.0A
Static Drain1-Drain2 On-Resistance
—
50
120
-1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
-0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
634
81
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
66
20
V
DS
= 0V, V
GS
= 0V, f = 1MHz
6.8
0.7
1.6
4.2
3.4
23
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Q
g
V
DS
= -4.5V, I
D
= -4A,
V
DS
= -10V
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 3.3
Ω, R
g
= 1
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
9.6
1.8
9.4
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
RR
I
S
= -1.0A, dI/dt = 100A/
μ
s
I
S
= -1.0A, dI/dt = 100A/
μ
s
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
DMP2090UFDB
20.0
15.0
10.0
5.0
10
8
V
GS
= -8.0V
V
GS
= -4.5V
V
GS
= -3.0V
V
DS
= -5V
V
GS
= -2.5V
V
GS
= -2.0V
6
4
T
J
= 85
℃
2
V
GS
= -1.5V
V
GS
= -1.2V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 25
℃
T
J
= -55
℃
0.0
0
0
0.4
0.8
1.2
1.6
2
0
0.2 0.4 0.6 0.8
1 1.2
1.4 1.6 1.8
2 2.2
2.4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.2
0.3
0.25
0.2
V
GS
= -2.5V
0.15
0.1
0.05
0
0.15
0.1
I
D
= -4.0A
V
GS
= -4.5V
0.05
0
0
3
6
9
12
15
0
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D1D2
, DRAIN1-DRAIN2 CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
0.14
0.12
0.1
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V
T
J
= 150
℃
T
J
= 125
℃
V
GS
= -4.5V, I
D
= -4.0A
0.08
0.06
0.04
0.02
0
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= -2.5V, I
D
= -3.5A
0.8
0.6
0
3
6
9
12
15
-50 -25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
DMP2090UFDB
0.2
0.18
0.16
0.14
0.12
0.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= -2.5V, I
D
= -3.5A
I
D
= -1mA
0.08
0.06
0.04
0.02
0
I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -4.0A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Temperature
20
15
10
5
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
0.3
C
rss
T
J
= -55
o
C
0
10
0
0.6
0.9
1.2
1.5
0
4
8
12
16
20
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
8
6
4
2
0
100
10
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 100µs
P
W
= 10ms
1
P
W
= 100ms
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on
1*MRP Board
V
GS
= -4.5V
0.1
0.01
P
W
= 1s
P
W
= 10s
V
DS
= -10V, I
D
= -4A
DC
10
0.1
1
100
0
2
4
6
8
10
12
Q
g
(nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
DMP2090UFDB
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 157
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.00000
1
0
.00001 0.0001
0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
DMP2090UFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
U-DFN2020-6
Type B
Min Max Typ
0.545 0.605 0.575
0.00 0.05 0.02
Seating Plane
Dim
A
A1
A3
b
D
D2
e
D
–
–
0.13
D2
D2
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
–
–
0.65
R
0
.150
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
z1
–
–
0.45
L
z
z1
0.25 0.35 0.30
E
E2
z1
–
–
–
–
0.225
0.175
k
All Dimensions in mm
L
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
C
G
G1
X
X1
X2
Y
Y1
Y2
X1(2x)
Y1(2x)
Y2
G
Y
G1
X
7 of 8
December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
DMP2090UFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
8 of 8
December 2019
© Diodes Incorporated
DMP2090UFDB
Document number: DS42300
Rev. 2 – 2
