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DMP2108UCB6
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Q
g
& Q
gd
I
D1D2
T
A
= +25°C
BV
DSS
R
D1D2(ON) TYP
82m
Ω
@ V
GS
= -4.5V
Dual PMOS in Common-Source Configuration
Small Footprint 1.5mm × 1.0mm
-20V
-3.0A
Gate ESD Protection to 6kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
D1D2(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: U-WLB1510-6
Terminal Connections: See Diagram Below
Moisture Sensitivity: Level 1 per J-STD-020
Terminal: Finish – SnAgCu. Solderable per MIL-STD-202 Method
208
Applications
Battery Management
Load Switch
UBM Opening: 280µm
Battery Protection
U-WLB1510-6 (Type B)
Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP2108UCB6-7
U-WLB1510-6 (Type B)
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AZ= Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
M = Month (ex: N = November)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
Code
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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July 2019
© Diodes Incorporated
DMP2108UCB6
Document number: DS39264 Rev. 3 – 2
DMP2108UCB6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DS
Value
-20
Unit
V
Gate-Source Voltage
-6
V
V
GS
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
-2.25
-1.8
A
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D1D2
I
D1D2
Steady
State
-3.0
-2.4
Continuous Source Pin Current
(Note 6)
Continuous Gate Clamp Current (Note 6)
-2.0
-0.5
-39
-7
A
A
A
A
I
S
I
G
Pulsed Source Pin Current (Pulse D
uration 10μs,
Duty C
ycle ≤ 1%
)
Pulsed Gate Clamp Current (Pulse D
uration 10μs,
Duty C
ycle ≤
1%)
I
SM
I
GM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
Unit
W
0.84
1.2
P
D
P
D
Total Power Dissipation (Note 6)
W
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
152.7
°C/W
°C/W
°C
R
θ
JA
105.4
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
DS
= –
250μA
V
DS
= -16V, V
GS
= 0V
V
GS
= -6V, V
DS
= 0V
μ
A
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
—
-100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.5
—
-0.75
82
-1.1
100
150
240
55
V
V
GS(TH)
V
DS
= V
GS
, I
DS
= -250
μA
V
GS
= -4.5V, I
D1D2
= -1A
V
GS
= -2.5V, I
D1D2
= -1A
V
GS
= -1.8V, I
D1D2
= -1A
V
GS
= -4.5V, I
DS
= -1A
V
GS
= -2.5V, I
DS
= -1A
V
GS
= -1.8V, I
DS
= -1A
—
110
160
42
m
Ω
R
D1D2(ON)
—
Static Drain-Source On-Resistance
—
—
56
80
m
Ω
R
DS(ON)
—
80
120
DIODE CHARACTERISTICS
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
-0.72
2.3
-1
—
—
V
V
SD
Q
RR
t
RR
V
GS
= 0V, I
DS
= -1A
nC
ns
V
DD
= -10V, I
F
= -1A,
di/dt = 200A/
μ
s
7.1
—
—
—
—
—
—
—
—
—
—
—
269
142
7.6
2.1
0.3
0.3
0.16
6
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
(-4.5V)
Gate-Source Charge
Q
gs
V
GS
= -4.5V, V
DS
= -10V,
I
DS
= -1A
Gate-Drain Charge
Q
gd
Gate Charge at V
TH
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q
g(TH)
t
D(ON)
t
R
7
ns
V
DD
= -10V, V
GS
= -4.5V,
34
ns
I
DS
= -1A, R
G
= 30
Ω
t
D(OFF)
16
ns
t
F
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR-4 material with 1 inch
2
(6.45cm
2
), 2 oz. (0.071mm thick) Cu.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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July 2019
© Diodes Incorporated
DMP2108UCB6
Document number: DS39264 Rev. 3 – 2
DMP2108UCB6
10
8
10.0
8.0
6.0
4.0
2.0
0.0
V
GS
= -4.5V
V
GS
= -2.5V
V
DS
= -5V
V
GS
= -2.0V
V
GS
= -1.8V
6
4
V
GS
= -1.5V
2
T
J
=85
℃
T
J
=25
℃
T
J
=150
℃
T
J
=125
℃
V
GS
= -1.2V
T
J
=-55
℃
0
0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.5
0.45
0.4
0.07
0.065
0.06
V
GS
= -2.5V
0.35
0.3
0.055
0.05
0.25
0.2
V
GS
= -4.5V
0.045
0.04
0.15
0.1
I
D
= -1.0A
0.035
0.03
0.05
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.5
1.4
1.3
1.2
1.1
1
0.07
0.06
0.05
0.04
0.03
0.02
V
GS
=-4.5V
T
J
=125
℃
T
J
= 150
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -4.5V, I
D
= -1.0A
V
GS
= -1.8V, I
D
= -1.0A
T
J
= -55
℃
0.9
0.8
0.7
V
GS
= -2.5V, I
D
= -1.0A
-50 -25
0
25
50
75 100
125 150
0
2
4
6
8
10
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
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July 2019
© Diodes Incorporated
DMP2108UCB6
Document number: DS39264 Rev. 3 – 2
DMP2108UCB6
1
0.9
0.8
0.7
0.6
0.5
0.4
0.12
0.11
0.1
V
GS
= -1.8V, I
D
= -1.0A
V
GS
= -2.5V, I
D
= -1.0A
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
I
D
= -1mA
I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -1.0A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
10000
1000
100
10
20
16
12
8
150
℃
125
℃
V
GS
= 0V
85
℃
25
℃
T
J
= 150
℃
1
4
T
J
= 125
℃
T
J
= 25
℃
T
J
= 85
℃
T
J
= -55
℃
0.1
0
0
4
8
12
16
20
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
Figure 9. Diode Forward Voltage vs. Current
100
10
4.5
R
DS(ON)
LIMITED
P
W
=1ms
P
W
=100µs
3
1
P
W
=10ms
P
W
=100ms
V
DS
= -10V, I
D
= -1A
1.5
T
J(MAX)
=150
℃
P
W
=1s
0.1
0.01
T
C
=25
℃
P
W
=10s
Single Pulse
DC
10
DUT on 1*MRP board
V
GS
= -4.5V
0
0.1
1
100
0
0.5
1
1.5
Qg (nC)
Figure 11. Gate Charge
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
July 2019
© Diodes Incorporated
DMP2108UCB6
Document number: DS39264 Rev. 3 – 2
DMP2108UCB6
500
400
300
200
100
0
Single Pulse
R
θ
JA
=154
℃
/W
R
θ
JA
(t)=R
θ
JA
* r(t)
T
J
-T
A
=P * R
θ
JA
(t)
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Single Pulse Maximum Power Dissipation
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 154
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
10000
0
1
000000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
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July 2019
© Diodes Incorporated
DMP2108UCB6
Document number: DS39264 Rev. 3 – 2
DMP2108UCB6
Package Outline Dimensions
U-WLB1510-6 (Type B)
E
Ø b (
4x)
e
e
U-WLB1510-6
(Type B)
D
Dim
Min
Max
Typ
A
A2
b
—
—
0.60
—
—
0.335
0.305 0.335 0.320
D
E
e
1.47
0.97
—
1.52 1.495
1.02 0.995
—
0.50
e
All Dimensions in mm
A2
A
Seating Plane
Suggested Pad Layout
U-WLB1510-6 (Type B)
D
Value
(in mm)
0.50
1.00
0.30
Dimensions
C
C1
D
C1
C
C
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July 2019
© Diodes Incorporated
DMP2108UCB6
Document number: DS39264 Rev. 3 – 2
DMP2108UCB6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
July 2019
© Diodes Incorporated
DMP2108UCB6
Document number: DS39264 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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