Diodes-Incorporated-DMP2225L-7
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DMP2225L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
Low On-Resistance
V
(BR)DSS
R
DS(ON)
Package
T
A
= +25°C
Low Input Capacitance
-2.6A
-2.0A
110m
Ω
@ V
GS
= -4.5V
225m
Ω
@ V
GS
= -2.5V
-20V
SOT23
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Applications
General Purpose Interfacing Switch
Power Management Functions
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4& 5)
Part Number
DMP2225L
-7
DMP2225LQ
-7
Qualification
Standard
Automotive
Case
SOT-23
SOT-23
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer
to http://www.diodes.com/quality/product_grade_definitions/
Marking Information
2P2 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
2P2
Y
̅
M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
̅
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2013
© Diodes Incorporated
DMP2225L
Document number: DS31461
Rev. 6 – 2
DMP2225L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
V
DSS
V
GSS
Value
-20
±12
-2.6
-2
Units
V
V
Stead
State
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
I
D
A
A
I
DM
8
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
P
D
Value
1.08
Units
W
115
°C/W
°C
Thermal Resistance, Junction to Ambient
@T
A
= +25°C (Note 6)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
-6
—
—
—
—
—
—
-800
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
nA
V
DS
= -20V, V
GS
= 0V
V
DS
≤
-5V, V
GS
= -4.5V
V
DS
≤
-5V, V
GS
= -2.5V
V
GS
= ±12V, V
DS
= 0V
On-State Drain Current
A
I
D(ON)
I
GSS
-3
—
Gate-Source Leakage
—
±80
nA
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-0.45
—
—
-1.25
V
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.6A
V
GS
= -2.5V, I
D
= -2.0A
V
DS
= -5V, I
D
= -2.6A
V
GS
= 0V, I
S
= -2.6A
80
165
110
225
Static Drain-Source On-Resistance
m
Ω
R
DS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
4
—
S
V
|Y
fs
|
V
SD
—
-1.26
—
—
—
—
—
—
—
250
88
—
—
—
16
5.3
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
58
12
V
GS
= 0V, V
DS
= 0V, f = 1MHz
V
GS
= -4.5V, V
DS
= -10V,
Total Gate Charge
4.3
0.9
2.1
Q
g
Gate-Source Charge
nC
Q
gs
Q
gd
I
D
= -2.7A
Gate-Drain Charge
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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October 2013
© Diodes Incorporated
DMP2225L
Document number: DS31461
Rev. 6 – 2
DMP2225L
10
8
6
5
4
V
= -10V
GS
V
= -5V
DS
V
= -5.0V
GS
Pulsed
V
= -4.0V
GS
6
4
3
2
V
= -2.5V
GS
2
0
V
= -2.0V
= -1.5V
GS
1
T
= 150°C
A
T
= 25°C
A
T
= 85°C
V
A
GS
T
= -55°C
A
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1
Typical Output Characteristics
2
2.5
3
3.5
4
4.5
5
-V
GS
, GATE SOURCE VOLTAGE (V)
Figure 2
Typical Transfer Characteristics
1
1,000
100
10
f = 1 MHz
V
= 0V
GS
V
= -2.5V
GS
C
iss
V
= -4.5V
0.1
GS
C
oss
C
V
= -10V
GS
rss
0.01
0
2
4
6
8
10 12 14 16 18 20
0.01
0.1
1
10
-I
D
, DRAIN CURRENT (A)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 4
Typical
T
otal Capacitance
Figure 3
O
n-Resistance vs. Drain Current and Gate Voltage
1.2
1.5
V
= -4.5V
1.4
1.3
1.2
1.1
GS
1.1
I
= -3.0A
D
-I =
250
µ
A
D
V
I
= -10V
1
0.9
0.8
GS
= -5.0A
D
V
= -2.5V
GS
I
= -1.0A
D
1
0.9
0.7
0.6
0.5
0.8
0.7
0.6
-50 -25
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5
Gate Threshold Voltage vs. Ambient
T
emperature
0
25
50
75 100
125 150
-55
25
85
125
150
T
A
, AMBIENT TEMPERATURE (C)
Figure 6
Normalized Static Drain-Source On-Resistance
vs. Ambient
T
emperature
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October 2013
© Diodes Incorporated
DMP2225L
Document number: DS31461
Rev. 6 – 2
DMP2225L
5
10
8
4.5
4
3.5
3
V
= -10V
= -3A
DS
I
D
6
2.5
2
4
2
0
1.5
1
0.5
0.5
0
2
4
6
8
10
12
14
0.6
0.7
0.8
0.9
1
Q
g
, TOTAL GATE CHARGE (nC)
-V
SD
, SOURCE DRAIN VOLTAGE (V)
Figure 8
Gate-Charge Characteristics
Figure 7
Reverse Drain Current vs. Source-Drain Voltage
100
R
DS(on)
Limited
10
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
0.1
P
= 1ms
W
P
= 100µs
W
T
T
= 150°C
J(max)
= 25°C
P
= 10µs
A
W
Single Pulse
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 9
Safe Operation Area
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
JA
JA
R
= 163°C/W
JA
D = 0.02
P(pk)
T
0.01
D = 0.01
t
1
t
2
– T
= P * R
(t)
J
A
JA
D = 0.005
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Figure 10
Transient Thermal Response
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October 2013
© Diodes Incorporated
DMP2225L
Document number: DS31461
Rev. 6 – 2
DMP2225L
Package Outline Dimensions
SOT23
A
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
–
H
G
0.013 0.10
0.903 1.10
M
K
J
K1
K1
L
M
–
–
D
0.45
0.61
F
L
0.085 0.18
0° 8°
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
5 of 6
October 2013
© Diodes Incorporated
DMP2225L
Document number: DS31461
Rev. 6 – 2
DMP2225L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
6 of 6
October 2013
© Diodes Incorporated
DMP2225L
Document number: DS31461
Rev. 6 – 2
