Diodes-Incorporated-DMP22D6UT-7
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DMP22D6UT
Mechanical Data
Features
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Gate
“Green” Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
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Case: SOT-523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
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Weight: 0.002 grams (approximate)
Drain
SOT-523
D
Gate
Gate
Protection
Diode
S
G
Source
ESD PROTECTED
TOP VIEW
Equivalent Circuit
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Units
V
V
Gate-Source Voltage
±8
V
GSS
T
T
= 25
°
C
= 85
°
C
Drain Current (Note 1)
Steady
State
-430
-310
A
mA
mA
I
D
A
Pulsed Drain Current (Note 3)
-750
I
DM
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
P
D
Value
150
Units
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
833
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
⎯
⎯
V
BV
DSS
I
DSS
I
GSS
⎯
⎯
⎯
⎯
-1.0
V
GS
= 0V, I
D
= -250mA
V
DS
= -20V, V
GS
= 0V
V
GS
=
±
4.5V, V
DS
= 0V
μ
A
μ
A
±
1.0
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
-0.5
-1.0
V
V
GS(th)
⎯
V
DS
= V
GS
, I
D
= -250
μ
A
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
DS
=10V, I
D
= 0.2A
V
0.7
1.1
1.7
1.1
1.6
2.6
Static Drain-Source On-Resistance
R
DS (ON)
⎯
Ω
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
200
ms
V
|Y
fs
|
V
SD
⎯
⎯
⎯
-1.4
V
GS
= 0V, I
S
= -115mA
⎯
175
30
20
pF
pF
pF
C
iss
C
oss
C
rss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Notes:
1. Device
mounted on FR-4 PCB.
2. No
purposefully added lead.
3. Pulse
width
≤
10
μ
S, Duty Cycle
≤
1%
4. Diodes
Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short
duration pulse test used to minimize self-heating effect.
1 of 4
November 2008
© Diodes Incorporated
DMP22D6UT
Document number: DS31585 Rev. 2 – 2
DMP22D6UT
0
0
-V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Fig. 1
Typical Output Characteristics
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristics
T
A
, AMBIENT TEMPERATURE (°C)
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3
Gate Threshold Voltage vs. Ambient
T
e
mperature
Fig. 4
Static Drain-Source On-Resistance vs. Drain Current
10
-I
D
, DRAIN-SOURCE CURRENT (A)
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 5
Static Drain-Source On-Resistance
vs. Drain Current
Fig. 6
Static Drain-Source On-Resistance vs.
Drain-Source Current
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November 2008
© Diodes Incorporated
DMP22D6UT
Document number: DS31585 Rev. 2 – 2
DMP22D6UT
-V
DS
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8
Reverse Drain Current vs. Source-Drain Voltage
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Ambient
T
emperature
150
120
90
60
30
0
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10
Typical Capacitance
-I
D
, DRAIN CURRENT (A)
Fig. 9
Forward Transfer Admittance vs. Drain Current
Ordering Information
(Note 6)
Part Number
Case
Packaging
DMP22D6UT-7
SOT-523
3000/Tape & Reel
Notes:
Marking Information
PBA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
PBA
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
Code
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
3 of 4
November 2008
© Diodes Incorporated
DMP22D6UT
Document number: DS31585 Rev. 2 – 2
DMP22D6UT
Package Outline Dimensions
A
SOT-523
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.30
0.85
1.75
⎯
1.10
1.70
0.10
0.80
0.30
0.20
0.65
8°
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
⎯
0.15
0.75
1.45
⎯
0.90
1.50
0.00
0.60
0.10
0.10
0.45
0°
C
B
G
H
K
M
N
M
N
α
J
L
D
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
1.8
0.4
0.51
1.3
Z
C
0.7
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
November 2008
© Diodes Incorporated
DMP22D6UT
Document number: DS31585 Rev. 2 – 2
