Diodes-Incorporated-DMP2900UT-7
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DMP2900UT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
I
D
BV
DSS
R
DS(ON)
T
A
= +25°C
-0.5A
-0.48A
-0.4A
700m
Ω
@ V
GS
= -4.5V
900m
Ω
@ V
GS
= -2.5V
1300m
Ω
@ V
GS
= -1.8V
-20V
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: SOT523
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
e3
DC-DC Converters
Load Switch
Power Management Functions
Terminal Connections: See Diagram
Weight: 0.002 grams (Approximate)
SOT523
D
S
G
ESD PROTECTED
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP2900UT-7
DMP2900UT-13
Case
SOT523
SOT523
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-free
“Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
RA1 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
G
H
I
J
K
L
M
N
O
P
R
S
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
1 of 7
June 2020
© Diodes Incorporated
DMP2009UT
Document number: DS41707
Rev. 4 – 2
DMP2900UT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Unit
V
Gate-Source Voltage
±6
V
V
GSS
Steady
State
-0.5
-0.4
T
T
= +25°C
= +75°C
A
A
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D
-0.39
A
A
I
S
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
-2.5
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
0.25
Unit
W
Steady State
Steady State
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
496
°C/W
W
R
JA
0.32
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
395
°C/W
°C
R
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
-20
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
-100
±2.0
nA
µA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= -20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
—
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
—
0.4
0.5
0.7
-0.7
-0.5
—
-1.0
0.7
0.9
1.3
-1.2
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
GS
= 0V, I
S
= -150mA
—
Static Drain-Source On-Resistance
—
—
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
49
12
pF
pF
pF
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
3.4
0.7
0.1
0.1
5.3
2.8
1247
445
10.5
1.8
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Gate-Source Charge
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47
Ω, R
G
= 10
Ω
,
I
D
= -200mA
Turn-On Rise Time
ns
Turn-Off Delay Time
ns
t
D(OFF)
t
F
Turn-Off Fall Time
ns
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= –
1A, di/dt = 100A/μs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6.
Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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June 2020
© Diodes Incorporated
DMP2009UT
Document number: DS41707
Rev. 4 – 2
DMP2900UT
2.0
1.5
1.0
0.5
0.0
1.5
1.2
0.9
0.6
0.3
0
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -3.0V
V
DS
= -5V
V
GS
= -2.0V
V
GS
= -1.8V
V
GS
= -1.5V
V
GS
= -1.3V
T
J
= 85
℃
T
J
= 150
℃
T
J
= 25
℃
T
J
= -55
℃
T
J
= 125
℃
V
GS
= -1.2V
2.5
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1
2
1.8
1.6
1.4
1.2
1
V
GS
= -1.8V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
I
D
= -430mA
V
GS
= -2.5V
I
D
= -150mA
0.8
0.6
0.4
0.2
0
V
GS
= -4.5V
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
2
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain
Current and Gate Voltage
Figure 4. Typical Transfer Characteristic
1.2
1.1
1
2
1.8
1.6
1.4
1.2
1
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
GS
= -4.5V
T
J
= 150
℃
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -4.5V, I
D
= -350mA
T
J
= -55
℃
0.8
0.6
-50 -25
0
25
50
75 100
125 150
0
0.4
0.8
1.2
1.6
2
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain
Current and Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
3 of 7
June 2020
© Diodes Incorporated
DMP2009UT
Document number: DS41707
Rev. 4 – 2
DMP2900UT
1.4
1.2
1
1.2
1
V
GS
= -1.8V, I
D
= -150mA
I
D
= -1mA
V
GS
= -2.5V, I
D
= -300mA
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -350mA
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
2
100
V
GS
= 0V
f = 1MHz
1.6
C
iss
1.2
0.8
0.4
0
C
oss
10
T
J
= 85
o
C
T
J
= 150
o
C
C
rss
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
1
10
0
0.3
0.6
0.9 1.2
1.5
0
2
4
6
8
10 12 14 16 18 20
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
6
5
4
3
2
1
0
R
DS(ON)
Limited
P
W
= 100µs
P
W
= 1ms
1
0.1
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
P
W
= 10s
V
DS
= -10V, I
D
= -250mA
T
J(Max)
= 150
℃
T
C
= 25
℃
0.01
0.001
Single Pulse
DUT on 1*MRP
Board
DC
10
V
GS
= -10V
0.1
1
100
0
0.2
0.4
0.6
0.8
1
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
4 of 7
June 2020
© Diodes Incorporated
DMP2009UT
Document number: DS41707
Rev. 4 – 2
DMP2900UT
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
D=0.005
D=Single Pulse
R
θ
JA
= 495
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
June 2020
© Diodes Incorporated
DMP2009UT
Document number: DS41707
Rev. 4 – 2
DMP2900UT
Package Outline Dimensions
SOT523
SOT523
Dim Min
Max
0.10
Typ
0.05
0.75
0.50
0.22
0.12
1.60
1.60
0.80
E
E1
A1
A2
A3
b
c
D
E
E1
e
0.00
0.60
0.80
0.45
0.15
0.10
1.50
1.45
0.75
0.65
0.30
0.20
1.70
1.75
0.85
0.50 BSC
1.10
0.40
b
e1
D
e1
L
a
0.90
0.20
0
°
1.00
0.33
8
°
—
All Dimensions in mm
A2
A3
c
a
e
L
A1
Suggested Pad Layout
SOT523
Value
(in mm)
Dimensions
C
X
1.29
0.40
X1
Y
0.70
0.51
Y1
C
Y1
1.80
Y
X
X1
6 of 7
June 2020
© Diodes Incorporated
DMP2009UT
Document number: DS41707
Rev. 4 – 2
DMP2900UT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
June 2020
© Diodes Incorporated
DMP2009UT
Document number: DS41707
Rev. 4 – 2
Mouser Electronics
Authorized Distributor
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