Diodes-Incorporated-DMP2900UW-13
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DMP2900UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
BV
DSS
R
DS(ON)
Low Gate Threshold Voltage
T
A
= +25°C
Low Input Capacitance
-0.6A
-0.5A
75
0mΩ
@ V
GS
= -4.5V
1050m
Ω
@ V
GS
= -2.5V
1500m
Ω
@ V
GS
= -1.8V
Fast Switching Speed
Low Input/Output Leakage
-20V
ESD Protected Gate
-0.45A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.
“Green” Device (Note
3)
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
which makes it ideal for high-efficiency power management
applications.
Case: SOT323
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
DC-DC Converters
Load Switch
Terminals: Finish
—
Matte Tin Annealed Over Alloy 42
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Power Management Functions
SOT323
D
G
S
ESD PROTECTED
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP2900UW-7
DMP2900UW-13
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which c
ontain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT323
HX9 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
2025
Code
F
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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June 2019
© Diodes Incorporated
DMP2900UW
Document number: DS41296
Rev. 4 – 2
DMP2900UW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Unit
V
Gate-Source Voltage
±6
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
-0.6
-0.5
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
-0.45
-2.5
A
A
I
S
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
0.3
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Steady State
Steady State
393
°C/W
W
R
ϴ
JA
P
D
0.5
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
272
°C/W
°C
R
ϴ
JA
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
-100
±2.0
nA
μA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.5
—
—
-1.0
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
GS
= 0V, I
S
= -150mA
—
—
—
0.75
1.05
1.5
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
49
12
pF
pF
pF
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
3.4
0.7
0.1
0.1
5.3
2.8
1247
445
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Gate-Source Charge
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47
Ω, R
G
= 10
Ω
,
I
D
= -200mA
Turn-On Rise Time
ns
Turn-Off Delay Time
ns
t
D(OFF)
t
F
t
RR
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
ns
nC
—
—
10.5
1.8
—
—
I
F
= –
1.0A, di/dt = 100A/μs
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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June 2019
© Diodes Incorporated
DMP2900UW
Document number: DS41296
Rev. 4 – 2
DMP2900UW
2
1.5
1.2
V
= -5.0V
V
= -3.0V
V
= -2.5V
DS
GS
GS
V
= -4.0V
GS
1.5
V
= -4.5V
GS
V
= -2.0V
= -1.8V
GS
0.9
0.6
V
1
0.5
0
GS
T
= 85°C
A
T
= 125°C
A
V
= -1.5V
= -1.2V
GS
0.3
0
T
= 25°C
A
T
= 150°C
A
T
= -55°C
A
V
GS
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
-V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
-V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
1.3
1.2
2
1.8
1.6
1.1
1
I =
-430mA
D
V
= -1.8V
GS
1.4
1.2
0.9
0.8
0.7
0.6
0.5
1
V
V
= -2.5V
= -4.5V
GS
GS
I
= -150mA
0.8
D
0.6
0.4
0.2
0
0.4
0.3
0
0.4
0.8
1.2
1.6
2
0
1
2
3
4
5
6
–
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
-V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.2
1.1
1
1.8
1.6
1.4
V
= -4.5V
GS
V
I
= -4.5V
GS
T
T
= 150°C
A
A
= -430mA
0.9
D
V
= -2.5V
GS
0.8
0.7
0.6
= 125°C
= 85°C
I
= -300mA
D
T
A
V
I
= -1.8V
GS
1.2
= -100mA
D
T
= 25°C
0.5
0.4
0.3
0.2
A
1
T
= -55°C
A
0.8
0.6
0.1
0
0
0.4
0.8
1.2
1.6
2
–
5
0
–
2
5
0
25
50
75 100 125
150
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
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June 2019
© Diodes Incorporated
DMP2900UW
Document number: DS41296
Rev. 4 – 2
DMP2900UW
1.4
1.2
1.2
V
I
= -1.8V
GS
= -100mA
1
D
1
I
D
= -1mA
0.8
0.6
0.8
0.6
0.4
I
D
= -250µA
V
I
= -2.5V
GS
= -300mA
D
V
I
= -4.5V
GS
0.4
0.2
= -430mA
D
0.2
0
–
5
0
–
2
5
0
25
50
75
100 125 150
–
5
0
–
2
5
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
100
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
2
f = 1MHz
1.6
C
iss
1.2
0.8
C
o
s
s
10
T =
125°C
A
T =
85°C
A
C
r
s
s
T =
25°C
A
0.4
0
T =
150°C
A
T =
-55°C
A
1
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10 12 14 16 18 20
-V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
-V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
6
5
4
3
2
10
R
D
S
(
O
N
)
Limited
P
= 100µs
W
1
V
I
= -10V
DS
DC
= -250mA
D
P
= 10s
W
P
= 1s
W
0.1
P
= 100ms
W
T
= 150°C
P
= 10ms
J
(
m
a
x
)
W
1
0
T
V
= 25°C
P
= 1ms
A
W
= -4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
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June 2019
© Diodes Incorporated
DMP2900UW
Document number: DS41296
Rev. 4 – 2
DMP2900UW
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
0.01
D = 0
.
0
05
R
θ
JA
(t) = r(t) * R
θ
JA
Single Pulse
R
θ
JA
= 392
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E
–
0
6 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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June 2019
© Diodes Incorporated
DMP2900UW
Document number: DS41296
Rev. 4 – 2
DMP2900UW
Package Outline Dimensions
SOT323
D
SOT323
A2
Dim Min Max
A1
0.00 0.10
A2
0.90 1.00
Typ
0.05
0.95
0.30
0.11
2.15
2.10
1.30
c
a
b
c
D
E
0.25 0.40
0.10 0.18
1.80 2.20
2.00 2.20
A1
e
L
b
E1
1.15 1.35
e
0.650 BSC
e1
1.20 1.40
1.30
F
L
a
0.375 0.475
0.425
0.25 0.40
0.30
—
0
°
8
°
E
E1
All Dimensions in mm
F
e1
Suggested Pad Layout
SOT323
X
Y
Value
Dimensions
(in mm)
0.650
1.300
0.470
0.600
2.500
C
G
X
Y
Y1
Y1
G
C
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June 2019
© Diodes Incorporated
DMP2900UW
Document number: DS41296
Rev. 4 – 2
DMP2900UW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
June 2019
© Diodes Incorporated
DMP2900UW
Document number: DS41296
Rev. 4 – 2
Mouser Electronics
Authorized Distributor
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