Diodes-Incorporated-DMP3015LSS-13

NOT RECOMMENDED FOR NEW DESIGN  

USE

DMP3015LSS  

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET  

Product Summary  

Features and Benefits  

•

•

•

•

•

•

•

•

Low On-Resistance  

I

D

max  

V

(BR)DSS  

R

DS(ON)

max  

Low Gate Threshold Voltage  

T

A

= +25°C  

Low Input Capacitance  

11m

Ω @ V

GS

= -10V  

17m

Ω @ V

GS

= -4.5V  

-13A  

Fast Switching Speed  

-30V  

Low Input/Output Leakage  

-9.9A  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

Qualified to AEC-Q101 Standards for High Reliability  

Description  

Mechanical Data  

This MOSFET is designed to minimize the on-state resistance  

(R

DS(on)

) yet maintain superior switching performance, making it  

ideal for high-efficiency power management applications.  

•

•

Case: SO-8  

Case Material: Molded Plastic, “Green” Molding Compound.  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020D  

Terminals Connections: See Diagram  

•

•

•

Applications  

Terminals: Finish—Matte Tin Annealed over Copper  

Leadframe. Solderable per MIL-STD-202, Method 208  

Weight: 0.074g (Approximate)  

•

•

•

Backlighting  

Power Management Functions  

DC-DC Converters  

•

D

SO-8  

S

S

S

G

D

D

D

D

G

Top View  

S

Top View  

Internal Schematic  

Equivalent Circuit  

Ordering Information

(Note 4)  

Part Number  

Case  

Packaging  

DMP3015LSS-13  

SO-8  

2500/Tape & Reel  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, go to our website at

Marking Information  

8

5

8

5

= Manufacturer’s Marking  

P3015LS = Product Type Marking Code  

YYWW = Date Code Marking  

YY or YY = Year (ex: 13 = 2013)  

WW = Week (01 – 53)  

YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)  

YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)  

P3015LS  

YY WW  

P3015LS  

YY  

WW  

1

4

1

4

Chengdu A/T Site  

Shanghai A/T Site  

1 of 6  

December 2018  

© Diodes Incorporated  

DMP3015LSS  

Document number: DS31472 Rev. 7 – 3  

DMP3015LSS  

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Drain-Source Voltage  

Symbol  

V

DSS  

Value  

-30  

Units  

V

V

Gate-Source Voltage  

V

GSS  

±

20  

Drain Current (Note 5)  

Steady  

State  

T

A

= +25°C  

T

A

= +70°C  

-13  

-9.75  

A

A

I

D  

Pulsed Drain Current (Note 6)  

-45  

I

DM  

Thermal Characteristics  

Characteristic  

Total Power Dissipation (Note 5)  

Symbol  

P

D  

Value  

2.5  

Unit  

W

Thermal Resistance, Junction to Ambient  

50  

°C/W  

R

ϴ

JA  

Operating and Storage Temperature Range  

-55 to +150  

°C  

T

J,

T

STG  

Notes:  

5. Device mounted on 2 oz. copper pads on FR-4 PCB with R

ϴ

JA

= 50°C/W.  

6. Pulse width

≤

10

μ

s, duty cycle

≤

1%.  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 7)  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate-Source Leakage  

Symbol  

Min  

Typ  

Max  

Unit  

Test Condition  

-30  

—

—

—

—

—

-1  

V

BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= -250

μ

A  

µ

A  

nA  

V

DS

= -30V, V

GS

= 0V  

—

I

GSS  

±

100  

V

GS

=

±

20V, V

DS

= 0V  

ON CHARACTERISTICS (Note 7)  

Gate Threshold Voltage  

-1  

—

—

9  

14  

—

-2  

V

V

GS(th)  

V

DS

= V

GS

, I

D

= -250

μ

A  

11  

17  

V

V

GS

= -4.5V, I

D

= -10A  

Static Drain-Source On-Resistance  

m

Ω  

R

DS (ON)  

Forward Transconductance  

Diode Forward Voltage (Note 7)  

DYNAMIC CHARACTERISTICS (Note 8)  

Input Capacitance  

—

15  

—

—

S

V

g

fs  

V

DS

= -15V, I

D

= -8A  

V

GS

= 0V, I

S

= -2.1A  

-0.5  

-1.1  

V

SD  

—

—

—

2748  

357  

—

—

—

pF  

pF  

pF  

C

iss  

C

oss  

C

rss  

V

DS

= -20V, V

GS

= 0V  

f = 1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

356  

V

DS

= 0V, V

GS

= 0V  

f = 1.0MHz  

Gate Resistance  

—

2.0  

—

Ω

R

G  

SWITCHING CHARACTERISTICS (Note 8)  

Total Gate Charge  

—

—

—

—

V

DS

= -10V, V

GS

= -4.5V, I

D

= -13A  

V

DS

= -10V, V

GS

= -10V, I

D

= -13A  

V

DS

= -10V, V

GS

= -10V, I

D

= -13A  

V

DS

= -10V, V

GS

= -10V, I

D

= -13A  

30.0  

60.4  

Q

g  

nC  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

—

—

—

—

—

—

7.2  

16.4  

11.2  

12.4  

104.9  

61.7  

—

—

—

—

—

—

Q

gs  

Q

gd  

t

d(on)  

t

r  

V

DS

= -15V, V

GS

= -10V,  

I

D

= -1A, R

G

= 6.0

Ω  

ns  

Turn-Off Delay Time  

Fall Time  

t

d(off)  

t

f  

Notes:  

7. Short duration pulse test used to minimize self-heating effect.  

8. Guaranteed by design. Not subject to product testing.  

2 of 6  

December 2018  

© Diodes Incorporated  

DMP3015LSS  

Document number: DS31472 Rev. 7 – 3  

DMP3015LSS  

20.0  

16.0  

12.0  

I

(A) @ V

 

= 10V  

GS  

D

V

= -5.0V  

DS  

I

(A) @ V

 

= 4.5V  

GS  

D

I

(A) @ V

 

= 4.0V  

GS  

D

I

(A) @ V

 

= 3.5V  

GS  

D

I

(A) @ V

 

= 3.0V  

GS  

D

8.0  

T

= 85

°

C  

A

T

= 125

°

C  

A

4.0  

0.0  

T

= 25

°

C  

A

T

= 150

°

C  

A

T

= -55

°

C  

I

(A) @ V

 

= 2.5V  

GS  

A

D

0

0.5  

1

1.5  

2

2.5  

3

V

DS

, DRAIN-SOURCE VOL

T

A

GE (V)  

Fig.1 Typical Output Characteristics  

T

= 150

°

C  

A

T

= 125

°

C  

A

T

= 85

°

C  

A

V

= -4.5V  

GS  

T

= 25

°

C  

A

V

= -10V  

GS  

T

= -55

°

C  

A

V

= -4.5V  

GS  

10,000  

1,000  

100  

f = 1MHz  

C

iss  

C

oss  

V

I

= -4.5V  

GS  

= -5A  

D

C

rss  

V

I

= -10V  

GS  

= -10A  

D

0

5

10  

15  

20  

25  

30  

V

DS

, DRAIN-SOURCE VOLTAGE (V)  

Fig. 6 Typical

T

o

tal Capacitance  

3 of 6  

December 2018  

© Diodes Incorporated  

DMP3015LSS  

Document number: DS31472 Rev. 7 – 3  

DMP3015LSS  

V

= 0V  

GS  

I

= -250mA  

D

I

= -1mA  

D

D = 0.7  

D = 0.5  

D = 0.3  

D = 0.9  

T

= 85

°

C  

A

D = 0.1  

D = 0.05  

R

θ

JA  

(t) = r(t) * R  

θ

JA  

= 91°C/W  

D = 0.02  

D = 0.01  

R

θ

JA  

P(pk)  

T

t

1

D = 0.005  

t

2

– T

 

= P * R

 

(t)  

J

A

θ

JA  

Duty Cycle, D = t

 

/t  

1

2

D = Single Pulse  

4 of 6  

December 2018  

© Diodes Incorporated  

DMP3015LSS  

Document number: DS31472 Rev. 7 – 3  

DMP3015LSS  

Package Outline Dimensions  

Please see

the latest version.  

SO-8  

SO-8  

Dim  

A

A1  

b

c

D

Min  

1.40  

0.10  

0.30  

0.15  

4.85  

5.90  

3.80  

3.85  

—  

Max  

1.50  

0.20  

0.50  

0.25  

4.95  

6.10  

3.90  

3.95  

—  

Typ  

1.45  

0.15  

0.40  

0.20  

4.90  

6.00  

3.85  

3.90  

1.27  

0.35  

0.72  

0.65  

E

1

E

b

E1  

E0  

e

h

L

E1  

h

)

s

de  

i

Q

s

l

l

A

(

–

—  

0.82  

0.70  

7°  

9°  

c

0.62  

0.60  

Q

4°±3°  

A

All Dimensions in mm  

Gauge Plane  

Seating Plane  

L

A1  

e

E0  

D

Suggested Pad Layout  

Please see

the latest version.  

SO-8  

X1  

Dimensions Value

 

(in mm)  

C

X

X1  

Y

1.27  

0.802  

4.612  

1.505  

6.50  

Y1  

Y1  

Y

C

X

5 of 6  

December 2018  

© Diodes Incorporated  

DMP3015LSS  

Document number: DS31472 Rev. 7 – 3  

DMP3015LSS  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2018, Diodes Incorporated  

6 of 6  

December 2018  

© Diodes Incorporated  

DMP3015LSS  

Document number: DS31472 Rev. 7 – 3