Diodes-Incorporated-DMP3037LSS-13
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DMP3037LSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
I
D
T
C
= +25°C
-5.8A
V
(BR)DSS
R
DS(on) max
32m
Ω
@ V
GS
= -10V
50m
Ω
@ V
GS
= -4.5V
-30V
-4.6A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
DC-DC Converters
Power management functions
Backlighting
D
S
S
S
G
D
SO-8
D
G
D
D
S
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP3037LSS-13
Case
SO-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
8
5
8
5
= Manufacturer’s Marking
P3037LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 – 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
P3037LS
YY WW
P3037LS
YY
WW
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
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April 2014
© Diodes Incorporated
DMP3037LSS
Document number: DS36775
Rev. 2 – 2
DMP3037LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
-5.8
-4.6
A
Continuous Drain Current (Note 6) V
GS
= -10V
I
D
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
Avalanche Energy
(Notes 7) L = 0.1mH
-40
-17
15
A
A
I
DM
I
AS
mJ
E
AS
Thermal Characteristics
Characteristic
Symbol
Value
Units
1.2
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
0.8
100
58
T
A
= +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
θ
JA
P
D
1.6
T
A
= +25°C
1.0
77
45
T
A
= +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
R
θ
JC
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
10
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250
μ
A
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
-1.0
±100
μ
A
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.0
—
—
19
-2.4
32
V
m
Ω
V
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= -10V, I
D
= -7A
Static Drain-Source On-Resistance
28
50
V
GS
= -4.5V, I
D
= -5A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
-0.75
-1.2
V
GS
= 0V, I
S
= -1A
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
931
120
102
23
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
R
g
Q
g
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -15V, I
D
= -7A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
19.3
9.7
nC
nC
nC
nC
ns
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Q
g
2.5
Q
gs
Q
gd
t
D(on)
t
r
V
DS
= -15V, I
D
= -7A
Gate-Drain Charge
3.6
Turn-On Delay Time
3.2
Turn-On Rise Time
11.5
55.8
30.8
13.6
3.4
ns
V
DS
= -15V, V
GS
= -10V,
R
L
= 2.15
ꢀ
, R
GEN
= 3
ꢀ
,
Turn-Off Delay Time
ns
t
D(off)
t
f
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
nS
nC
IS = -7A, dI/dt = 100A/
μ
s
IS = -7A, dI/dt = 100A/
μ
s
Qrr
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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April 2014
© Diodes Incorporated
DMP3037LSS
Document number: DS36775
Rev. 2 – 2
DMP3037LSS
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20
18
16
14
12
10
8
V
= -5.0V
V
= -10V
DS
GS
V
= -3.0V
GS
V
= -4.5V
GS
V
= -4.0V
GS
V
= -3.5V
GS
T
= 150
C
A
V
= -2.5V
GS
6
6.0
T
= 125
C
A
4
T =
85
C
A
4.0
T
= 25
C
A
2
2.0
T
= -55
C
V
= -2.0V
A
GS
0
0.0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.16
0.14
0.12
0.1
I
= -7.0A
D
V
V
= -4.5V
= -10V
GS
I
= -5.0A
D
0.08
0.06
0.04
0.02
0
GS
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
-I
D
, DRAIN SOURCE CURRENT (A)
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristics
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
1.6
1.4
1.2
1
V
= -10V
GS
V
I
= -4.5V
GS
= -5.0A
D
T
T
= 150
C
A
= 125
C
A
T
= 85
C
A
V
I
= -10V
GS
= -12A
T
= 25
C
D
A
T
= -55
C
A
0.8
0.6
0
2
4
6
8
10 12 14 16 18 20
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 6 On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
-I
D
, DRAIN SOURCE CURRENT (A)
C)
Figure 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
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April 2014
© Diodes Incorporated
DMP3037LSS
Document number: DS36775
Rev. 2 – 2
DMP3037LSS
2
1.8
1.6
1.4
1.2
1
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
I
= -4.5V
GS
= -5A
D
I
= -1mA
D
I
= -250µA
D
V
I
= -10V
GS
= -7A
D
0.8
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 7 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (°C)
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
emperature
20
18
16
14
12
10
8
10000
f = 1MHz
C
iss
1000
T
= 150
C
A
T
= 125
C
A
T
= 85
C
A
C
oss
T
= 25
C
A
100
C
6
rss
T
= -55
C
A
4
2
0
0.2
10
0.4
0.6
0.8
1
1.2
1.4
1.6
0
5
10
15
20
25
30
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
-V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
10
8
100
10
R
DS(on)
Limited
6
V
I
= -15V
DS
DC
= -7A
D
1
P
= 10s
W
P
= 1s
W
4
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.1
T
J(max)
= 150°C
T
A
= 25°C
P
= 100µs
W
2
V
GS
= -8V
Single Pulse
DUT on 1 * MRP Board
0.01
0
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
Q
g
, TOTAL GATE CHARGE (nC)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate-Charge Characteristics
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April 2014
© Diodes Incorporated
DMP3037LSS
Document number: DS36775
Rev. 2 – 2
DMP3037LSS
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
JA
(t) = r(t) * R
R
JA
= 100°C/W
Duty Cycle, D = t1/ t2
JA
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1000
t1, PULSE DURATION TIMES (sec)
Figure 13
Transient Thermal Resistance
Package Outline Dimensions
SO-8
Dim
A
A1
A2
A3
b
Min
–
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7
°~
9
°
h
°
45
1.27 Typ
Detail ‘A’
A2
A3
A
h
L
–
0.35
0.82
8
0.62
0
b
e
D
All Dimensions in mm
Suggested Pad Layout
X
Dimensions Value
(in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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April 2014
© Diodes Incorporated
DMP3037LSS
Document number: DS36775
Rev. 2 – 2
DMP3037LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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April 2014
© Diodes Incorporated
DMP3037LSS
Document number: DS36775
Rev. 2 – 2
