Diodes-Incorporated-DMP3056L-7
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DMP3056L
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Product Summary
Low On-Resistance
I
D MAX
BV
DSS
R
DS(ON) MAX
Low Gate Threshold Voltage
T
A
= +25°C
Low Input Capacitance
-4.3A
-3.7A
50m
Ω @ V
GS
=-10V
70m
Ω @ V
GS
=-4.5V
-30V
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.009 grams (Approximate)
SOT23
D
D
G
S
G
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP3056L-7
DMP3056L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are
defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
6L = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: E = 2017)
M = Month (ex: 9 = September)
6L
Date Code Key
Year
2012
~
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
Z
~
E
F
G
H
I
J
K
L
M
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
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March 2017
© Diodes Incorporated
DMP3056L
Document number: DS37386
Rev. 4 – 2
DMP3056L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Units
V
V
Gate-Source Voltage
V
GSS
25
-4.3
-3.4
Steady
State
T
A
= +25°C
T
A
= +70°C
A
A
Drain Current (Note 5) V
GS
= -10V
Pulsed Drain Current (Note 6)
I
D
-20
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
1.38
91
Unit
W
Total Power Dissipation (Note 5)
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
°C/W
°C
R
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-30
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -30V, V
GS
= 0V
-1
µA
V
GS
=
20V, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
100
800
Gate-Source Leakage
nA
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1
-2.1
V
m
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
35
50
50
70
V
GS
= -10V, I
D
= -6.0A
V
GS
= -4.5V, I
D
= -5.0A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-1.2
V
GS
= 0V, I
S
= -1.7A
642
65
pF
pF
pF
C
iss
C
oss
C
rss
R
G
Output Capacitance
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
48
15
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -6A
5.8
11.8
2.0
2.4
4.9
4.7
35.2
18.2
nC
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Q
G
Q
G
nC
ns
Q
GS
Q
GD
t
D(ON)
t
R
V
DS
= -15V,
I
D
= -6A
Turn-On Delay Time
Rise Time
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0
Turn-Off Delay Time
Fall Time
t
D(OFF)
t
F
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
6. Pulse width
≤
10µS, Duty Cycle
≤
1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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March 2017
© Diodes Incorporated
DMP3056L
Document number: DS37386
Rev. 4 – 2
DMP3056L
10
9
8
7
6
5
4
3
2
1
0
12.0
10.0
8.0
V
DS
= -5.0V
V
GS
= -10.0V
V
GS
= -4.5V
V
GS
= -4.0V
6.0
4.0
T
A
=150
℃
T
A
=125
℃
V
GS
= -3.0V
V
GS
= -2.5V
T
A
=85
℃
2.0
T
A
=25
℃
T
A
= -55
℃
0.0
0
1
2
3
4
5
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.1
0.2
0.15
0.1
I
D
= -5.0A
V
GS
= -4.5V
V
GS
= -10.0V
0.05
0
I
D
= -4.2A
0.01
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10 12 14 16 18 20
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
-I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
1.2
1
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
GS
= -4.5V
T
A
=150
℃
T
A
=125
℃
T
A
=85
℃
V
GS
=-10V, I
D
=-4.3A
T
A
=25
℃
T
A
= -55
℃
0.8
0.6
V
GS
=-4.5V, I
D
=-3.7A
1
2
3
4
5
6
7
8
9
10
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75 100
125 150
-I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
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March 2017
© Diodes Incorporated
DMP3056L
Document number: DS37386
Rev. 4 – 2
DMP3056L
2.5
2
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= -4.5V, I
D
= -3.7A
I
D
= -1mA
1.5
1
I
D
= -250mA
V
GS
= -10V, I
D
= -4.3A
0.5
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Temperature
10000
1000
100
10
9
8
7
6
5
4
3
2
1
0
V
GS
=0V
f=1MHz
T
A
=150
℃
T
A
=125
℃
C
iss
T
A
=85
℃
T
A
=25
℃
C
oss
C
rss
T
A
= -55
℃
10
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
R
DS(ON)
Limited
P
W
=100µs
P
W
=1ms
6
DC
P
W
=10s
1
V
DS
= -15V, I
D
= -6A
4
P
W
=1s
0.1
0.01
T
J,(MAX)
=150
℃
T
A
=25
℃
Single Pulse
DUT on 1*MRP board
V
GS
= -10V
P
W
=100ms
2
P
W
=10ms
0
0.1
1
10
100
0
2
4
6
8
10
12
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11. Gate Charge
4 of 6
March 2017
© Diodes Incorporated
DMP3056L
Document number: DS37386
Rev. 4 – 2
DMP3056L
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
R
JA
(t)=r(t) *
R
JA
D=0.005
R
JA
=165
℃
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
1E-05
0.001
1E-06
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
Package Outline Dimensions
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
A
B
C
D
F
G
H
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
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March 2017
© Diodes Incorporated
DMP3056L
Document number: DS37386
Rev. 4 – 2
DMP3056L
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
X1
Y
2.0
Y1
C
0.8
1.35
0.9
Y1
2.9
X
X1
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
6 of 6
March 2017
© Diodes Incorporated
DMP3056L
Document number: DS37386
Rev. 4 – 2
