Diodes-Incorporated-DMP3056LDM-7
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DMP3056LDM
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
I
D
T
A
= +25°C
-4.3A
BV
DSS
R
DS(ON) MAX
45m
@ V
GS
= -10V
65m
@ V
GS
= -4.5V
-30V
-3.3A
PPAP Capable (Note 4)
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
and yet maintain superior switching
Mechanical Data
)
performance, making it ideal for high efficiency power management
applications.
Case: SOT26
Case Material
–
Molded Plastic
, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.016 grams (Approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
D
D
S
D
SOT26
D
G
Top View
Top View
Internal Schematic
Ordering Information
(Note 5)
Part Number
DMP3056LDM-7
DMP3056LDMQ-7
Qualification
Commercial
Automotive
Case
SOT26
SOT26
Packaging
3000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to
http://www.diodes.com/product_compliance_definitions.html.
Marking Information
DMA = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
DMA
M = Month (ex: 9 = September)
Date Code Key
Year
2008
~
2016
2017
2018
2019
2020
2021
Code
V
~
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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November 2016
© Diodes Incorporated
DMP3056LDM
Document number: DS31449 Rev. 12 – 2
DMP3056LDM
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
V
GSS
I
D
Value
-30
Unit
V
Gate-Source Voltage
V
20
-4.3
-5.8
-2.3
-13
Steady State
t < 10s
A
T
A
= +25
C
T
A
= +25
C
Continuous Drain Current (Note 7) V
GS
=
–
10V
A
I
D
Maximum Continuous Body Diode Forward Current (Note 7)
A
I
S
A
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
Value
1.25
Unit
W
T
A
= +25°C
P
D
100
°C/W
W
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Steady State
T
A
= +25°C
Steady State
R
JA
1.5
P
D
86
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case
R
JA
°C/W
°C
15.6
R
JC
-55 to +150
Operating and Storage Temperature Range
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
STATIC PARAMETERS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
V
-1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250
A
A
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
T
J
= +25
C
V
GS
= 0V, V
DS
= -30V
V
GS
=
20V, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
GS
= V
DS
, I
D
= -250
A
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4.2A
V
DS
= -10V, I
D
= -4.3A
V
GS
= 0V, I
S
= -1.7A
100
800
-2.1
nA
V
I
GSS
-1.0
8
V
GS(TH)
R
DS(ON)
45
65
Static Drain-Source On-Resistance
m
Forward Transconductance
Diode Forward Voltage
s
-1.2
g
FS
V
V
SD
DYNAMIC PARAMETERS (Note 9)
Input Capacitance
948
105
100
pF
pF
pF
C
iss
C
oss
C
rss
V
GS
= 0V, V
DS
= -25V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 9)
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -6A
10.1
nC
Q
g
Total Gate Charge
21.1
2.8
Q
g
Q
gs
Q
gd
R
g
V
DS
= -15V, V
GS
= -10V,
I
D
= -6A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
nC
3.2
13.15
10.2
6.6
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
t
D(ON)
t
R
t
D(OFF)
t
F
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
g
= 6.0
ns
Turn-Off Delay Time
Fall Time
50.1
22.3
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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November 2016
© Diodes Incorporated
DMP3056LDM
Document number: DS31449 Rev. 12 – 2
DMP3056LDM
12
11
10
10
9
V
= -10V
GS
V
= 5V
DS
8
Pulsed
9
8
7
6
5
4
V
= -4.5V
GS
7
6
5
4
3
I
T
= 150°C
A
V
V
= -3.0V
GS
T
= 125°C
,
A
I
3
2
1
0
T
= 85°C
T =
25°C
A
A
2
V
V
= -1.5V
= -1.0V
GS
GS
T
= -55°C
= -2.5V
A
GS
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2.5
3
3.5
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.1
0.05
0.04
V
= -4.5V
GS
I
= -3.7A
D
0.03
0.02
V
= -4.5V
= -10V
GS
V
I
= -10V
GS
= -4.3A
D
V
GS
0.01
0
0.01
-50 -25
0
25
50
75 100
125 150
(°C )
0.1
1
10
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
T
A
, AMBIENT TEMPERATURE
Fig. 4 Static Drain-Source On-Resistance
vs. Ambient
T
emperature
3
10,000
1,000
2.8
f = 1MHz
-250
A
I
D
=
2.6
2.4
2.2
2
C
iss
1.8
C
oss
100
10
1.6
1.4
C
rss
1.2
1
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100
125 150
(°C )
T
A
, AMBIENT TEMPERATURE
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6
Typical
T
o
tal Capacitance
Fig. 5 Gate Threshold Variation vs. Ambient
T
emperature
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© Diodes Incorporated
DMP3056LDM
Document number: DS31449 Rev. 12 – 2
DMP3056LDM
1.7
1.5
10
1
1.3
1.1
0.1
T
= 150°C
A
V
= -10V
GS
I =
-10A
D
T
= 125°C
A
0.01
T
= 85°C
0.9
A
T
= 25°C
V
= -4.5V
T
= -55°C
A
GS
0.001
A
I
= -5A
0.7
0.5
D
0.0001
-50 -25
0
25
50
75 100
125 150
0
0.2
0.4
0.6
0.8
1
1.2
(°C )
T
J
, JUNCTION TEMPER
A
T
URE
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Fig. 8 On-Resistance Variation with
T
e
mperature
10
8
100
R
T
Limited
DS(ON)
= 150°C
J(MAX)
T
= 25°C
A
Single Pulse
10
P
= 10µs
W
V
= -15V
= 6A
DS
6
4
I
DC
D
P
= 10s
W
1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
0.1
W
2
0
P
= 100µs
W
0.01
0.1
1
10
100
0
5
10
15
20
25
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Safe Operation Area
1.4
1.2
1.0
0.8
0.6
0.4
Note 6
0.2
0
0
25
T
A
, AMBIENT TEMPERATURE
Fig. 11 Power Dissipation vs. Ambient
T
e
mperature
50
150
75
100
125
(°C )
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© Diodes Incorporated
DMP3056LDM
Document number: DS31449 Rev. 12 – 2
DMP3056LDM
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
R
(t) = r(t) * R
JA
D = 0.05
JA
R
=
96°C /W
JA
D = 0.02
D = 0.01
D = 0.005
P(pk)
t
0.01
1
t
2
T
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
SOT26
D
SOT26
Dim Min Max
A1
0.013 0.10
A2
1.00 1.30
A3
0.70 0.80
Typ
0.05
1.10
0.75
0.38
0.15
3.00
0.95
1.90
2.80
1.60
0.40
8°
E1
E
b
c
D
e
e1
E
0.35 0.50
0.10 0.20
2.90 3.10
–
–
–
–
b
a1
e1
2.70 3.00
E1
1.50 1.70
L
a
a1
0.35 0.55
–
–
–
–
A2
A1
A3
7°
All Dimensions in mm
Seating Plane
a
L
e
c
Suggested Pad Layout
SOT26
C1
Dimensions Value
(in mm)
C
C1
G
X
Y
2.40
0.95
1.60
0.55
0.80
3.20
Y1
G
Y
C
Y1
X
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November 2016
© Diodes Incorporated
DMP3056LDM
Document number: DS31449 Rev. 12 – 2
DMP3056LDM
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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November 2016
© Diodes Incorporated
DMP3056LDM
Document number: DS31449 Rev. 12 – 2
