Diodes-Incorporated-DMP3056LSS-13
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DMP3056LSS
SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
Low On-Resistance
Case: SO-8
45mΩ @ V
GS
= -10V
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
65mΩ @ V
GS
= -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Terminals: Finish
–
Matte Tin Annealed over Copper
Leadframe, Solderable per MIL-STD-202, Method 208
e3
Weight: 0.074 grams (Approximate)
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
D
SO-8
S
S
S
D
D
G
D
S
D
G
Equivalent Circuit
Top View
Top View
Pin-Out
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP3056LSS-13
SO-8
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and
<1000ppm antimony compounds..
Marking Information
8
5
= Manufacturer’s Marking
P3056LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 17 = 2017)
WW = Week (01 to 53)
P3056LS
YY
WW
1
4
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February 2017
© Diodes Incorporated
DMP3056LSS
Document number: DS31419 Rev. 8 – 2
DMP3056LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Unit
V
Gate-Source Voltage
V
V
GSS
20
Steady
State
T
A
= +25°C
T
A
= +70°C
-7.1
-6.0
Drain Current (Note 5)
A
A
I
D
-20
Pulsed Drain Current (
Pulse Width
10
S, Duty Cycle
1%)
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
2.5
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
50
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
-1
µA
V
DS
= -30V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
100
800
Gate-Source Leakage
nA
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-1
-1.7
-2.1
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -6.0A
V
GS
= -4.5V, I
D
= -5.0A
45
65
Static Drain-Source On-Resistance
m
Forward Transconductance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
8
S
V
g
fs
V
DS
= -10V, I
D
= -5.3A
V
GS
= 0V, I
S
= -1.7A
-0.5
-1.2
V
SD
722
114
92
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
= -25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 0V, V
GS
= 0V
f = 1.0MHz
Gate Resistance
3.3
R
G
SWITCHING CHARACTERISTICS (Note 7)
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -6A
6.8
nC
nC
Q
G
Total Gate Charge
13.7
1.6
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
V
DS
= -15V, V
GS
= -10V,
I
D
= -6A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
4.18
6.4
5.3
V
DS
= -15V, V
GS
= -10V,
ns
I
D
= -1A, R
G
= 6.0
Turn-Off Delay Time
Fall Time
26.5
14.7
t
D(OFF)
t
F
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing
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February 2017
© Diodes Incorporated
DMP3056LSS
Document number: DS31419 Rev. 8 – 2
DMP3056LSS
12
11
10
10
9
V
= -10V
GS
V
= -5V
DS
8
Pulsed
9
8
7
6
5
4
V
= -4.5V
GS
7
6
5
4
3
2
I
T
= 150°C
A
V
V
= -3.0V
GS
T
= 125°C
,
A
I
3
2
1
0
T
= 85°C
T
= 25°C
A
A
V
V
= -1.5V
= -1.0V
GS
GS
T
= -55°C
= -2.5V
A
GS
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2.5
3
3.5
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.1
0.05
0.04
V
= -4.5V
GS
I
= -5.0A
D
0.03
0.02
V
= -4.5V
= -10V
GS
V
I
= -10V
GS
= -6.0A
D
V
GS
0.01
0
0.01
-50 -25
0
25
50
75 100
125 150
(
o
C)
0.1
1
10
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
T
A
, AMBIENT TEMPERATURE
Fig. 4 Static Drain-Source On-Resistance
vs. Ambient
T
emperature
10,000
1,000
3
2.8
f = 1MHz
I
= -250µA
2.6
2.4
D
C
2.2
2
iss
1.8
1.6
1.4
C
oss
100
10
C
rss
1.2
1
0
5
10
15
20
25
30
-50 -25
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100
125 150
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6
Typical
T
o
tal Capacitance
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February 2017
© Diodes Incorporated
DMP3056LSS
Document number: DS31419 Rev. 8 – 2
DMP3056LSS
100
10
10
1
R
DS(ON)
LIMITED
P
W
=1ms
P
W
=100µs
)
(
0.1
P
W
=10ms
1
T
= 150°C
A
P
W
=100ms
T
= 125°C
A
0.01
T
= 85°C
A
T
J(MAX)
=150
℃
T
C
=25
℃
Single Pulse
DUT on
1*MRP board
V
GS
= -10V
P
W
=1s
P
W
=10s
,
0.1
0.01
I
–
T
= 25°C
T
= -55°C
A
0.001
A
DC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0.1
1
10
100
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 SOA, Safe Operation Area
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
700
600
500
400
300
200
100
0
Single Pulse
R
θ
JA
=111
℃
/W
R
θ
JA
(t)=R
θ
JA
* r(t)
T
J
-T
A
=P * R
θ
JA
(t)
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 9 Single Pulse Maximum Power Dissipation
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 96
℃
/W
D=0.005
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 10 Transient Thermal Resistance
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February 2017
© Diodes Incorporated
DMP3056LSS
Document number: DS31419 Rev. 8 – 2
DMP3056LSS
Package Outline Dimensions
SO-8
SO-8
Dim
A
A1
b
c
D
Min
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
Typ
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
E
1
E
E1
E0
e
h
L
b
E1
h
)
Q
–
—
0.82
0.70
sides
All
(
7°
9°
0.62
0.60
c
Q
4°± 3°
All Dimensions in mm
A
Gauge Plane
Seating Plane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
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February 2017
© Diodes Incorporated
DMP3056LSS
Document number: DS31419 Rev. 8 – 2
DMP3056LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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February 2017
© Diodes Incorporated
DMP3056LSS
Document number: DS31419 Rev. 8 – 2
