Diodes-Incorporated-DMP3056LSS-13

Part #Diodes-Incorporated-DMP3056LSS-13
Download 
Diodes-Incorporated-DMP3056LSS-13
DMP3056LSS  
SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
Low On-Resistance  
Case: SO-8  
45mΩ @ V

GS

= -10V  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
65mΩ @ V

GS

= -4.5V  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Terminals: Finish
–
Matte Tin Annealed over Copper  
Leadframe, Solderable per MIL-STD-202, Method 208
e3  
Weight: 0.074 grams (Approximate)  
Low Input/Output Leakage  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note
3)  
Qualified to AEC-Q101 Standards for High Reliability  
D
SO-8  
S
S
S
D
D
G
D
S
D
G
Equivalent Circuit  
Top View  
Top View  
Pin-Out  
Ordering Information
(Note 4)  
Part Number  
Case  
Packaging  
DMP3056LSS-13  
SO-8  
2500/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

2. See http://www.diodes.com/quality/lead_free.html

for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and  
<1000ppm antimony compounds..  
Marking Information  
8
5
= Manufacturer’s Marking  
P3056LS = Product Type Marking Code  
YYWW = Date Code Marking  
YY or YY = Year (ex: 17 = 2017)  
WW = Week (01 to 53)  
P3056LS  
YY  
WW  
1
4
1 of 6  
February 2017  
© Diodes Incorporated  
DMP3056LSS  
Document number: DS31419 Rev. 8 – 2  

DMP3056LSS  
Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
V

DSS  

Value  
-30  
Unit  
V
Gate-Source Voltage  
V
V

GSS  

20  
Steady  
State  
T

A

= +25°C  
T

A

= +70°C  
-7.1  
-6.0  
Drain Current (Note 5)  
A
A
I

D  

-20  
Pulsed Drain Current (
Pulse Width
10
S, Duty Cycle
1%)  
I

DM  

Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 5)  
Symbol  
P

D  

Value  
2.5  
Unit  
W
Thermal Resistance, Junction to Ambient (Note 5)  
Operating and Storage Temperature Range  
50  
°C/W  
°C  
R

θ
JA  

-55 to +150  
T

J,

T

STG  

Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 6)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-30  
V
BV

DSS  

I

DSS  

V

GS

= 0V, I

D

= -250µA  
Zero Gate Voltage Drain Current  
-1  
µA  
V

DS

= -30V, V

GS

= 0V  
V

GS

=
20V, V

DS

= 0V  
V

GS

=
25V, V

DS

= 0V  
100  
800  
Gate-Source Leakage  
nA  
I

GSS  

ON CHARACTERISTICS (Note 6)  
Gate Threshold Voltage  
-1  
-1.7  
-2.1  
V
V

GS(TH)  

R

DS(ON)  

V

DS

= V

GS

, I

D

= -250µA  
V

GS

= -10V, I

D

= -6.0A  
V

GS

= -4.5V, I

D

= -5.0A  
45  
65  
  
  
Static Drain-Source On-Resistance  
m
  
Forward Transconductance  
Diode Forward Voltage (Note 6)  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
8
S
V
g

fs  

V

DS

= -10V, I

D

= -5.3A  
V

GS

= 0V, I

S

= -1.7A  
-0.5  
-1.2  
V

SD  

722  
114  
92  
pF  
pF  
pF  
C

iss  

C

oss  

C

rss  

V

DS

= -25V, V

GS

= 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
V

DS

= 0V, V

GS

= 0V  
f = 1.0MHz  
Gate Resistance  
3.3  
R

G  

  
  
SWITCHING CHARACTERISTICS (Note 7)  
V

DS

= -15V, V

GS

= -4.5V,  
I

D

= -6A  
6.8  
nC  
nC  
Q

G  

  
  
Total Gate Charge  
13.7  
1.6  
Q

G  

Q

GS  

Q

GD  

t

D(ON)  

t

R  

  
  
  
  
  
  
  
  
  
  
  
  
  
  
V

DS

= -15V, V

GS

= -10V,  
I

D

= -6A  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
4.18  
6.4  
5.3  
V

DS

= -15V, V

GS

= -10V,  
ns  
I

D

= -1A, R

G

= 6.0
  
Turn-Off Delay Time  
Fall Time  
26.5  
14.7  
t

D(OFF)  

t

F  

Notes:  
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  
6. Short duration pulse test used to minimize self-heating effect.  
7. Guaranteed by design. Not subject to product testing  
2 of 6  
February 2017  
© Diodes Incorporated  
DMP3056LSS  
Document number: DS31419 Rev. 8 – 2  

DMP3056LSS  
12  
11  
10  
10  
9
V
= -10V  
GS  
V
= -5V  
DS  
8
Pulsed  
9
8
7
6
5
4
V
= -4.5V  
GS  
7
6
5
4
3
2
I
T
= 150°C  
A
V
V
= -3.0V  
GS  
T
= 125°C  
,
A
I

3
2
1
0
T
= 85°C  
T
= 25°C  
A
A
V
V
= -1.5V  
= -1.0V  
GS  
GS  
T
= -55°C  
= -2.5V  
A
GS  
1
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
1
1.5  
2
2.5  
3
3.5  
4
-V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
-V

GS

, GATE SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristics  
0.1  
0.05  
0.04  
V
= -4.5V  
GS  
I
= -5.0A  
D
0.03  
0.02  
V
= -4.5V  
= -10V  
GS  
V
I
= -10V  
GS  
= -6.0A  
D
V
GS  
0.01  
0
0.01  
-50 -25  
0
25  
50  
75 100
 
125 150  
(

o

C)  
0.1  
1
10  
-I

D

, DRAIN-SOURCE CURRENT (A)  
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage  
T

A

, AMBIENT TEMPERATURE
Fig. 4 Static Drain-Source On-Resistance  
vs. Ambient
T
emperature  
10,000  
1,000  
3
2.8  
f = 1MHz  
I
= -250µA  
2.6  
2.4  
D
C
2.2  
2
iss  
1.8  
1.6  
1.4  
C
oss  
100  
10  
C
rss  

1.2  
1
0
5
10  
15  
20  
25  
30  
-50 -25  
T

A

, AMBIENT TEMPERATURE (°C)  
Fig. 5 Gate Threshold Variation vs. Ambient Temperature  
0
25  
50  
75 100
 
125 150  
-V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Fig. 6
 
Typical
T
o
tal Capacitance  
3 of 6  
February 2017  
© Diodes Incorporated  
DMP3056LSS  
Document number: DS31419 Rev. 8 – 2  

DMP3056LSS  
100  
10  
10  
1
R

DS(ON)

LIMITED  
P

W

=1ms  
P

W

=100µs  
)
(
0.1  
P

W

=10ms  
1
T
= 150°C  
A
P

W

=100ms  
T
= 125°C  
A
0.01  
T
= 85°C  
A
T

J(MAX)

=150
℃
 
T

C

=25
℃  
Single Pulse  
DUT on  
1*MRP board  
V

GS

= -10V  
P

W

=1s  
P

W

=10s  
,
0.1  
0.01  
I

–
T
= 25°C  
T
= -55°C  
A
0.001  
A
DC  
0.0001  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0.1  
1
10  
100  
-V

SD

, SOURCE-DRAIN VOLTAGE (V)  
-V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Fig. 8 SOA, Safe Operation Area  
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage  
700  
600  
500  
400  
300  
200  
100  
0
Single Pulse  
R

θ
JA

=111
℃
/W  
R

θ
JA

(t)=R

θ
JA

* r(t)  
T

J

-T

A

=P * R

θ
JA

(t)  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, PULSE DURATION TIME (sec)  
Fig. 9 Single Pulse Maximum Power Dissipation  
1
D=0.9  
D=0.7  
D=0.5  
D=0.3  
0.1  
D=0.1  
D=0.05  
D=0.02  
0.01  
D=0.01  
R

θ
JA

(t) = r(t) * R

θ
JA  

R

θ
JA

= 96
℃
/W  
D=0.005  
Duty Cycle, D = t1 / t2  
D=Single Pulse  
0.001  
1E-05  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1, PULSE DURATION TIME (sec)  
Fig. 10 Transient Thermal Resistance  
4 of 6  
February 2017  
© Diodes Incorporated  
DMP3056LSS  
Document number: DS31419 Rev. 8 – 2  

DMP3056LSS  
Package Outline Dimensions  
SO-8  
SO-8  
Dim  
A
A1  
b
c
D
Min  
1.40  
0.10  
0.30  
0.15  
4.85  
5.90  
3.80  
3.85  
—  
Max  
1.50  
0.20  
0.50  
0.25  
4.95  
6.10  
3.90  
3.95  
—  
Typ  
1.45  
0.15  
0.40  
0.20  
4.90  
6.00  
3.85  
3.90  
1.27  
0.35  
0.72  
0.65  
E
1
E
E1  
E0  
e
h
L
b
E1  
h
)
Q
–
—  
0.82  
0.70  
sides  
All  
(
7°  
9°  
0.62  
0.60  
c
Q
4°± 3°  
All Dimensions in mm  
A
Gauge Plane  
Seating Plane  
L
A1  
e
E0  
D
Suggested Pad Layout  
SO-8  
X1  
Dimensions Value
 
(in mm)  
C
X
X1  
Y
1.27  
0.802  
4.612  
1.505  
6.50  
Y1  
Y1  
Y
C
X
5 of 6  
February 2017  
© Diodes Incorporated  
DMP3056LSS  
Document number: DS31419 Rev. 8 – 2  

DMP3056LSS  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending.
 
Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference.
 
Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2017, Diodes Incorporated  
6 of 6  
February 2017  
© Diodes Incorporated  
DMP3056LSS  
Document number: DS31419 Rev. 8 – 2