Diodes-Incorporated-DMP3068L-13
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DMP3068L
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
Low On-Resistance
I
D max
T
A
= +25°C
Package
V
(BR)DSS
R
DS(on) max
Low Gate Threshold Voltage
Low Input Capacitance
-3.9A
-3.6A
72m
Ω
@ V
GS
= -10V
85
mΩ @ V
GS
= -4.5V
Fast Switching Speed
-30V
SOT-23
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified
representative.
Mechanical Data
Description and Applications
•
•
Case: SOT23 (Standard)
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high-efficiency power management
applications.
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Lead-Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
•
•
•
•
•
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
SOT23
D
D
G
S
G
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP3068L-7
DMP3068L-13
Case
SOT23 (Standard)
SOT23 (Standard)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
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© Diodes Incorporated
DMP3068L
Document number: DS37536 Rev. 3 – 2
DMP3068L
Marking Information
SOT23
68 = Product Type Marking Code
YM = Date Code Marking
Y or Y
= Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
68
Date Code Key
Year
2014
……
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
B
……
I
J
K
L
M
N
O
P
R
S
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
1
2
3
4
5
6
7
8
9
O
N
D
Maximum Ratings
(@ T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Units
V
V
Gate-Source Voltage
V
GSS
±
12
-3.3
-2.6
T
A
= +25°C
T
A
= +70°C
Steady
State
A
I
D
Drain Current (Note 6) V
GS
= -10V
-3.9
-3.2
T
A
= +25°C
T
A
= +70°C
t<10s
A
A
I
D
Pulsed Drain Current (
Pulse width
≤
10µS, Duty Cycle
≤
1%
)
-18
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
0.7
Unit
Total Power Dissipation (Note 5)
W
P
D
Steady State
t<10s
182
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
θ
JA
133
1.2
P
D
Steady State
t<10s
103
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JA
75
-55 to +150
T
J,
T
STG
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate.
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© Diodes Incorporated
DMP3068L
Document number: DS37536 Rev. 3 – 2
DMP3068L
Electrical Characteristics
(@ T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
V
GS
= 0V, I
D
= -250µA
-30
V
BV
DSS
I
DSS
-1
µA
nA
V
DS
= -30V, V
GS
= 0V
I
GSS
±
100
V
GS
=
±
12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.5
-1.3
V
m
Ω
V
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -4.2A
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -1.8V, I
D
= -1.0A
57
64
80
72
85
120
165
Static Drain-Source On-Resistance
107
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-1.2
V
GS
= 0V, I
S
= -1.0A
708
57
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
G
Output Capacitance
V
DS
= -15V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
47
14
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= -15V, I
D
= -4A
7.3
nC
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Q
G
15.9
1.2
Q
G
nC
ns
Q
GS
Q
GD
t
d(on)
t
r
V
DS
= -15V, I
D
= -4A
1.7
Turn-On Delay Time
Rise Time
3.5
15.8
70.3
33.9
V
DS
= -15V, V
GS
= -10V,
I
D
= -4A, R
G
= 6.0
Ω
Turn-Off Delay Time
t
d(off)
t
f
Fall Time
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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DMP3068L
Document number: DS37536 Rev. 3 – 2
DMP3068L
20
18
20
15
V
= -3.0V
T
= 150°C
= 125°C
GS
A
V
= -4.5V
GS
V
= -5.0V
V
= -3.5V
DS
GS
T
A
V
= -4.0V
GS
V
= -10V
GS
16
14
T
= 25°C
A
T
= 85°C
A
V
= -2.5V
GS
12
10
8
T
= -55°C
A
10
5
V
= -2.0V
GS
6
4
2
0
V
= -1.5V
GS
0
0
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
0.15
0.1
0.25
0.2
V
= -2.5V
GS
I
= -4.2A
= -2.0A
D
I
D
0.15
0.1
V
= -4.5V
GS
V
= -10V
GS
0.05
0.05
0
0
0
0
2
4
6
8
10
12
4
8
12
16
20
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
0.15
0.1
2
V
= -10V
GS
1.8
1.6
1.4
1.2
1
T
= 150°C
A
V
I
= -4.5V
GS
= -4.0A
D
T
= 125°C
A
T
= 85°C
A
V
I
= -2.5V
GS
= -2.0A
T
= 25°C
A
D
0.05
T
= -55°C
A
0.8
0.6
0.4
0
0
5
10
15
20
–
5
0
–
2
5
0
25
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100 125 150
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
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DMP3068L
Document number: DS37536 Rev. 3 – 2
DMP3068L
0.2
1.5
1.2
0.15
I
= -250µA
V
I
= -2.5V
D
GS
= -2.0A
D
0.9
0.6
0.1
I
= -1mA
D
V
I
= -4.5V
GS
= -4.0A
D
0.05
0
0.3
0
–
5
0
–
2
5
0
25
50
75 100 125
150
–
5
0
–
2
5
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
20
10000
f = 1MHz
15
10
1000
C
iss
T =
150°C
A
T =
125°C
A
T =
85°C
A
C
100
10
o
s
s
C
r
s
s
5
0
T =
25°C
A
T =
-55°C
A
0
0.2
0.4
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
0.6
0.8
1
1.2
1.4
–
3
0
–
2
5
–
2
0
–
1
5
–
1
0
-5
0
-V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
10
8
100
10
R
D
S
(
on)
Limi
t
e
d
V
= -15V
DS
I
= -4A
D
6
4
2
0
DC
= 10s
1
0.1
P
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
P
T
J
(m ax)
= 150°C
T
A
= 25°C
W
= 1ms
P
W
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
= 100µs
W
0.01
0
2
4
6
8
10
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
12
14
16
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMP3068L
Document number: DS37536 Rev. 3 – 2
DMP3068L
1
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
9
D = 0
.
0
5
D = 0
.
0
2
0.01
0.001
D = 0
.
0
1
D = 0
.
0
05
R
t
h
ja
(t) = r(t) * R
t
h
ja
Single Pulse
R
= 182°C/W
Duty Cycle, D = t1/ t2
t
h
ja
0.001
0.01
0.1
1
10
100 1000
10000
0.0001
t1, PULSE DURATION TIME (sec)
Figure 13
Transient Thermal Resistance
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© Diodes Incorporated
DMP3068L
Document number: DS37536 Rev. 3 – 2
DMP3068L
Package Outline Dimensions
SOT23 (Standard)
D
GAUGE PLANE
0.25
SOT23 (Standard)
A1
Dim
A
A1
A2
b
Min
0.90
0.00
0.85
0.30
Max
1.15 1.025
0.10 0.05
1.10 0.975
0.51 0.40
Typ
A2
A
c
a
L1
L
b
c
0.080 0.202
0.11
D
E
E1
e
e1
F
L1
L
a
2.80
2.25
1.20
0.89
1.78
0.40
0.45
0.25
0°
3.00
2.55
1.40
1.03 0.915
2.05 1.83
0.60 0.535
0.61
0.55
8°
2.90
2.40
1.30
E
E1
0.55
0.40
—
All Dimensions in mm
e
e1
F
Suggested Pad Layout
SOT23 (Standard)
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
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DMP3068L
Document number: DS37536 Rev. 3 – 2
DMP3068L
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
1.
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this document.
5.
Diodes
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
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July 2021
© Diodes Incorporated
DMP3068L
Document number: DS37536 Rev. 3 – 2
