Diodes-Incorporated-DMP3085LSS-13
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DMP3085LSS
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
T
A
= +25°C
-3.8A
Low On-Resistance
Package
V
(BR)DSS
R
DS(ON) MAX
Low Input Capacitance
70m
Ω
@V
GS
= -10V
95m
Ω
@V
GS
= -4.5V
Fast Switching Speed
-30V
SO-8
-3.2A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Applications
Backlighting
Power Management Functions
DC-DC Converters
SO-8
S
D
S
S
G
D
D
D
Top View
Top View
Internal Schematic
Ordering Information
Part Number
DMP3085LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
T
o
p View
8
5
Logo
Part n
o
.
P3085SS
YY WW
Xth week: 01 ~ 53
Year: “12” = 2012
1
4
1 of 6
May 2013
© Diodes Incorporated
DMP3085LSS
Document number: DS36165
Rev. 2 – 2
DMP3085LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C
Steady
State
-3.8
-3
A
A
I
D
I
D
T
A
= +70°C
T
A
= +25°C
Continuous Drain Current (Note 6) V
GS
= -10V
-5.3
-4.2
t<10s
T
A
= +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
-2.5
20
A
A
I
S
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
Units
1.3
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
θ
JA
P
D
0.8
96
48
1.6
T
A
= +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
T
A
= +25°C
1
78
39
T
A
= +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case
18
R
θ
JC
Operating and Storage Temperature Range
-55 to 150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
=-30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
—
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
—
—
—
—
—
50
-3
70
V
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -5.3A
Static Drain-Source On-Resistance
m
Ω
R
DS (ON)
75
95
V
GS
= -4.5V, I
D
= -4.2A
V
DS
= -5V, I
D
= -5.3A
V
GS
= 0V, I
S
= -1A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
5.8
-0.7
—
S
V
|Y
fs
|
V
SD
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
563
48
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
G
Output Capacitance
pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
41
10.3
5.2
11
Ω
Total Gate Charge
(V
GS
= -4.5V)
Total Gate Charge
(V
GS
= -10V)
Gate-Source Charge
Q
g
Q
g
nC
nS
V
DS
= -15V, I
D
= -3.8A
1.7
1.9
4.8
5
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= -15V, V
GS
= -10V,
I
D
= -1A, R
G
= 6.0
Ω
Turn-Off Delay Time
31
t
D(off)
t
f
Turn-Off Fall Time
14.6
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6
May 2013
© Diodes Incorporated
DMP3085LSS
Document number: DS36165
Rev. 2 – 2
DMP3085LSS
20
16
12
8
20.0
16.0
12.0
8.0
T
= 150°C
V
= -10V
= -4.5V
V
= -5.0V
A
GS
DS
T
A
= 85°C
A
V
= -4.0V
GS
T
= 125°C
A
T
= 25°C
V
GS
T
= -55°C
A
V
= -3.0V
GS
4.0
4
V
= -2.5V
GS
V
= -2.0V
GS
0.0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 1
Typical Output Characteristics
Figure 2
Typical Transfer Characteristics
1.0
0.4
0.35
0.3
V
= -4.5V
GS
T
= 150
C
A
0.25
0.2
T
= 125
C
A
V
= -4.5V
GS
0.1
T
= 85
C
A
0.15
0.1
T
= 25
C
A
V
= -10V
GS
T
= -55
C
A
0.05
0
0.01
0
4
8
12
16
20
-I
D
, DRAIN SOURCE CURRENT (A)
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
0.16
0.14
0.12
0.1
2
1.8
1.6
1.4
1.2
1
V
I
= -10V
GS
= -5.3A
D
V
I
= -4.5V
GS
= -4.2A
D
V
I
= -4.5V
GS
= -4.2A
D
0.08
0.06
0.04
0.02
0
0.8
0.6
0.4
0.2
0
V
= -10V
GS
I
= -5.3A
D
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 6
On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
75
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 5
On-Resistance Variation with
T
e
mperature
-50 -25
0
25
50
100 125 150
C)
C)
3 of 6
May 2013
© Diodes Incorporated
DMP3085LSS
Document number: DS36165
Rev. 2 – 2
DMP3085LSS
2.4
1.6
0.8
0
20
16
12
8
-I =
1mA
D
-I =
250µA
D
T =
25°C
A
4
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100
125 150
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8
Diode Forward Voltage vs. Current
Figure 7
Gate Threshold Variation vs. Ambient
T
e
mperature
1000
10000
f = 1MHz
C
iss
1000
100
10
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
100
C
oss
T
= 25°C
A
C
rss
1
10
0
0.1
5
0
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10
Typical Drain-Source Leakage Current vs. Voltage
15
20
25
30
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9
Typical Junction Capacitance
10
9
8
7
6
5
4
3
2
1
0
V
I
= -15V
DS
= -3.8A
D
0
2
4
6
8
10
Q
g
, TO
T
A
L GATE CHARGE (nC)
Figure 11
Gate-Charge Characteristics
12
4 of 6
May 2013
© Diodes Incorporated
DMP3085LSS
Document number: DS36165
Rev. 2 – 2
DMP3085LSS
Package Outline Dimensions
SO-8
Min
–
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
h
L
4.85
5.90
3.85
1.27 Typ
–
0.62
0
4.95
6.10
3.95
Detail ‘A’
7
°~
9
°
h
°
45
0.35
0.82
8
Detail ‘A’
A2
A3
A
All Dimensions in mm
b
e
D
Suggested Pad Layout
X
Dimensions Value
(in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
5 of 6
May 2013
© Diodes Incorporated
DMP3085LSS
Document number: DS36165
Rev. 2 – 2
DMP3085LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
6 of 6
May 2013
© Diodes Incorporated
DMP3085LSS
Document number: DS36165
Rev. 2 – 2
