Diodes-Incorporated-DMP3099L-7

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Diodes-Incorporated-DMP3099L-7
DMP3099L  
P-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low Gate Threshold Voltage  
I

D

max  
V

(BR)DSS  

R

DS(ON)

max  
T

A

= +25°C  
-3.8A  
Low Input Capacitance  
Fast Switching Speed  
65m
Ω
@ V

GS

= -10V  
99m
Ω
@ V

GS

= -4.5V  
-30V  
Low Input/Output Leakage  
-3.0A  
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description  
This MOSFET has been designed to minimize the on-state resistance  
(R

DS(ON)

) and yet maintain superior switching performance, making it  
ideal for high efficiency power management applications.  
Mechanical Data  
Case: SOT23  
Case Material: Molded Plastic, “Green” Molding Compound.
 
UL  
Flammability Classification Rating 94V-0  
Applications  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish
Matte Tin annealed over Copper leadframe.  
Backlighting  
Power Management Functions  
DC-DC Converters  
e3  
Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.008 grams (approximate)  
D
SOT23  
S
G
Top View  
Pin Configuration  
Top View  
Equivalent Circuit  
Ordering Information
(Note 4)  
Part Number  
DMP3099L
-7  
DMP3099L
-13  
Compliance  
Standard  
Standard  
Case  
SOT23  
SOT23  
Packaging  
3000/Tape & Reel  
10000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. S

more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http”

Marking Information  
D99= Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: V = 2008)  
D99  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2008  
2009  
2010  
2011  
2012  
2013  
2014  
2015  
Code  
V
W
X
Y
Z
A
B
C
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
May 2013  
© Diodes Incorporated  
DMP3099L  
Document number: DS36081
 
Rev. 3 – 2  

DMP3099L  
Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
V

DSS  

Value  
-30  
Units  
V
V
Gate-Source Voltage  
±20  
V

GSS  

T

A

= +25°C  
Steady  
State  
-3.8  
-2.9  
A
A
Drain Current (Note 5) V

GS

= -10V  
Pulsed Drain Current (Note 6)  
I

D  

T

A

= +70°C  
-11  
I

DM  

Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 5)  
Symbol  
P

D  

Value  
1.08  
Units  
W
115  
°C/W  
°C  
Thermal Resistance, Junction to Ambient
 
@T

A

= +25°C (Note 5)  
Operating and Storage Temperature Range  
R

θ
JA  

-55 to +150  
T

J,

T

STG  

Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
BV

DSS  

I

DSS  

I

GSS  

-30  
—
—
—
—
—
—
-800  
±100  
V
nA  
nA  
V

GS

= 0V, I

D

= -250µA  
V

DS

= -30V, V

GS

= 0V  
V

GS

= ±20V, V

DS

= 0V  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
V

GS(th)  

-1.0  
—
—
—
-2.1  
65  
99  
—
-1.26  
V
V

DS

= V

GS

, I

D

= -250µA  
V

GS

= -10V, I

D

= -3.8A  
V

GS

= -4.5V, I

D

= -3.0A  
V

DS

= -5V, I

D

= -2.7A  
V

GS

= 0V, I

S

= -2.7A  
Static Drain-Source On-Resistance  
R

DS(ON)  

m
ꢀ
 
Forward Transfer Admittance  
Diode Forward Voltage (Note 6)  
DYNAMIC CHARACTERISTICS (Note 8)  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
|Y

fs

|  
V

SD  

—
—
3.6  
—
S
V
C

iss  

C

oss  

C

rss  

R

G  

—
—
—
—
563  
48  
41  
—
—
—
—
pF  
pF  
pF  
ꢀ
V

DS

= -25V, V

GS

= 0V,  
f = 1.0MHz  
10.3  
V

GS

= 0V V

DS

= 0V,
 
f = 1MHz  
SWITCHING CHARACTERISTICS (Note 8)  
V

DS

= -15V, V

GS

= -4.5V,  
—
5.2  
—
I

D

= -3.8A  
Total Gate Charge  
Q

g  

—
—
—
—
—
—
—
11  
1.7  
1.9  
4.8  
5.0  
31  
—
—
—
—
—
—
—
nC  
ns  
V

DS

= -15V, V

GS

= -10V,  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Q

gs  

Q

gd  

t

d(on)  

t

r  

t

d(off)  

t

f  

I

D

= -3.8A  
V

DS

= -15V, V

GS

= -10V,  
I

D

= -1A, R

G

= 6.0
ꢀ  
15  
Notes:  
5. Device mounted on FR-4 PCB on 2 oz., 0.5 in.

2

copper pads and t
≤
5 sec.  
6. Pulse width
≤
10µS, Duty Cycle
≤
1%.  
7. Short duration pulse test used to minimize self-heating effect.  
8. Guaranteed by design. Not subject to production testing.  
2 of 6  
May 2013  
© Diodes Incorporated  
DMP3099L  
Document number: DS36081
 
Rev. 3 – 2  

DMP3099L  
20.0  
16.0  
12.0  
8.0  
20  
16  
12  
8
T
= 85°C  
V
= -10V  
A
GS  
V
= -5.0V  
DS  
T
= 150°C  
A
T
= 25°C  
A
V
= -4.0V  
GS  
T
= 125°C  
V
= -4.5V  
A
GS  
T
= -55°C  
A
V
= -3.0V  
GS  
4
4.0  
V
= -2.5V  
GS  
V
= -2.0V  
GS  
0
0.0  
0
1
2
3
4
5
6
0
1
2
3
4
5
-V

GS

, GATE-SOURCE VOLTAGE (V)  
Figure 2
 
Typical Transfer Characteristics  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Figure 1 Typical Output Characteristics  
1
0.4  
0.35  
0.3  
V
= -4.5V  
GS  
T
= 150°C  
A
0.25  
0.2  
T
= 125°C  
A
V
= -4.5V  
0.1  
GS  
T
= 85°C  
A
0.15  
0.1  
V
= -10V  
GS  
T
= 25°C  
A
0.05  
0
T
= -55°C  
A
0.01  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
I

D

, DRAIN-SOURCE CURRENT (A)  
-I

D

, DRAIN CURRENT (A)  
Figure 3
 
Typical On-Resistance vs.  
Drain Current and Gate Voltage  
Figure 4
 
Typical On-Resistance vs.  
Drain Current and
T
e
mperature  
2
0.16  
0.14  
0.12  
0.1  
1.8  
1.6  
1.4  
1.2  
V
I
= -10V  
GS  
= -5.3A  
D
V
= 4.5V  
GS  
I
= 4.2A  
D
V
= -4.5V  
GS  
I
= -4.2A  
D
0.08  
0.06  
0.04  
0.02  
0
1
0.8  
0.6  
0.4  
0.2  
V
I
= 10V  
GS  
= 5.3A  
D
0
-50 -25  
T

A

, AMBIENT TEMPERATURE (  
Figure 5
 
On-Resistance Variation with
T
e
mperature  
0
25  
50  
75 100
 
125 150  
-50 -25  
T

J

, JUNCTION TEMPER
A
T
URE (  
Figure 6
 
On-Resistance Variation with
T
e
mperature  
0
25  
50  
75 100
 
125 150  
C)  
C)  
3 of 6  
May 2013  
© Diodes Incorporated  
DMP3099L  
Document number: DS36081
 
Rev. 3 – 2  

DMP3099L  
2.4  
1.6  
0.8  
0
20  
16  
12  
8
I
= -1mA  
D
I
= -250µA  
D
T
= 25°C  
A
4
0
-50 -25  
0
25  
50  
75 100
 
125 150  
C)  
0
0.3  
0.6  
0.9  
1.2  
1.5  
T

A

, AMBIENT TEMPERATURE (  
V

SD

, SOURCE-DRAIN VOLTAGE (V)  
Figure 7
 
Gate Threshold Variation vs. Ambient
T
emperature  
1000  
Figure 8
 
Diode Forward Voltage vs. Current  
10  
9
8
7
6
5
4
3
2
1
0
V
I
= 15V  
DS  
C
= 3.8A  
iss  
D
100  
C
oss  
C
rss  
f = 1MHz  
10  
0
0
2
4
6
8
10  
12  
5
10  
15  
20  
25  
30  
Q

g

, TO
T
A
L GATE CHARGE (nC)  
Figure 10
 
Gate Charge  
V

DS

, DRAIN-SOURCE VOL
T
A
GE (V)  
Figure 9
 
Typical Junction Capacitance  
4 of 6  
May 2013  
© Diodes Incorporated  
DMP3099L  
Document number: DS36081
 
Rev. 3 – 2  

DMP3099L  
Package Outline Dimensions  
A
SOT23  
Dim  
Min  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
A
B
C
D
F
G
H
J
K
K1  
L
M
  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
–
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
–
H
G
M
K
J
K1  
D
–
F
L
0.45  
0.085 0.18  
0° 8°  
0.61  
All Dimensions in mm  
Suggested Pad Layout  
Y
Dimensions Value
 
(in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
Z
C
1.35  
E
X
5 of 6  
May 2013  
© Diodes Incorporated  
DMP3099L  
Document number: DS36081
 
Rev. 3 – 2  

DMP3099L  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending.
 
Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference.
 
Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2013, Diodes Incorporated  
6 of 6  
May 2013  
© Diodes Incorporated  
DMP3099L  
Document number: DS36081
 
Rev. 3 – 2