Diodes-Incorporated-DMP3164LVT-13
| Part # | Diodes-Incorporated-DMP3164LVT-13 |
Download  | Diodes-Incorporated-DMP3164LVT-13 |
DMP3164LVT
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
BV
DSS
R
DS(ON)
T
A
= +25°C
Low Input Capacitance
Fast Switching Speed
-2.8A
-2.3A
95m
Ω
@ V
GS
= -10V
140m
Ω
@ V
GS
= -4.5V
-30V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: TSOT26
Case Material: Molded
Plastic, “Green” Molding Compound
.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Applications
Backlighting
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
DC-DC Converters
Power Management Functions
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
D1
D2
TSOT26
G1
S2
G2
1
2
3
6
5
4
D1
S1
D2
G1
G2
S1
Q1 P-Channel
Top View
Top View
S2
Q2 P-Channel
Ordering Information
(Note 4)
Part Number
DMP3164LVT-7
DMP3164LVT-13
Case
TSOT26
TSOT26
Packaging
3,000 / Tape & Reel
10,000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
TSOT26
AN9 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
Code
G
H
I
J
K
L
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
May 2019
© Diodes Incorporated
DMP3164LVT
Document number: DS41715
Rev. 2 – 2
DMP3164LVT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Unit
V
Gate-Source Voltage
±12
V
V
GSS
Steady
T
A
= +25°C
T
A
= +70°C
-2.8
-2.2
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
State
I
D
Maximum Continuous Body Diode Forward Current (Note 6)
-1.0
-16
A
A
I
S
Pulsed Drain Current (10
µ
s Pulse, Duty Cycle = 1%)
I
DM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
0.83
Unit
W
151
°C/W
W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Power Dissipation (Note 6)
R
θ
JA
1.16
P
D
108
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J
,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -24V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
-1.0
±100
µA
nA
—
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
-0.7
—
-1.1
-2.1
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -2.7A
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -3.3V, I
D
= -1A
V
GS
= 0V, I
S
= -1A
60
81
104
95
140
300
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
-0.8
-1.0
—
—
—
—
—
—
—
—
—
—
—
—
324
44
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= -15V, V
GS
= 0V,
f = 1.2MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
33
7.2
4.4
8.6
0.3
1.5
7.7
17.8
17.8
29.5
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Q
g
V
DS
= -15V, V
GS
= -4.5V, I
D
= -3A
Q
g
nC
ns
Q
gs
Q
gd
t
D(ON)
t
R
V
DS
= -15V, V
GS
= -10V, I
D
= -3A
Turn-On Delay Time
Turn-On Rise Time
V
GS
= -10V, V
DS
= -15V,
R
G
= 6
Ω
, R
L
= 15
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 7
May 2019
© Diodes Incorporated
DMP3164LVT
Document number: DS41715
Rev. 2 – 2
DMP3164LVT
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
15
10
5
V
GS
= -3.5V
V
GS
= -3.8V
V
GS
= -4.0V
V
DS
= -5V
V
GS
= -4.5V
V
GS
= -3.0V
V
GS
= -2.5V
V
GS
= -10V
V
GS
= -2.2V
V
GS
= -1.8V
T
J
= 85
℃
T
J
= 150
℃
T
J
= 25
℃
T
J
= -55
℃
T
J
= 125
℃
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.14
0.12
0.1
0.285
0.235
0.185
0.135
0.085
0.035
V
GS
= -3.3V
I
D
= -2.7A
V
GS
= -4.5V
0.08
0.06
0.04
0.02
V
GS
= -10V
I
D
= -1.5A
I
D
= -1A
0
3
6
9
12
15
0
2
4
6
8
10
12
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.16
0.14
0.12
0.1
1.6
1.4
1.2
1
V
GS
= -10V
V
GS
= -10V, I
D
= -2.7A
V
GS
= -4.5V, I
D
= -1.5A
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
0.08
0.06
0.04
0.02
0
V
GS
= -3.3V, I
D
= -1A
T
J
= 25
℃
T
J
= -55
℃
0.8
0.6
0
5
10
15
-50 -25
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
3 of 7
May 2019
© Diodes Incorporated
DMP3164LVT
Document number: DS41715
Rev. 2 – 2
DMP3164LVT
0.16
0.14
0.12
0.1
1.6
1.4
1.2
1
V
GS
= -3.3V, I
D
= -1A
I
D
= -1mA
V
GS
= -4.5V, I
D
= -1.5A
I
D
= -250
μ
A
0.8
0.6
0.4
0.2
0
0.08
0.06
0.04
0.02
V
GS
= -10V, I
D
= -2.7A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
15
10
5
10000
1000
100
V
GS
= 0V
f = 1MHz
C
iss
C
oss
T
J
= 85
o
C
T
J
= 150
o
C
T
J
= 25
o
C
C
rss
T
J
= 125
o
C
T
J
= -55
o
C
1.2
0
10
0
0.3
0.6
0.9
1.5
0
10
20
30
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
10
8
100
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 10ms
P
W
= 100µs
10
1
6
P
W
= 100ms
4
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on
1*MRP Board
V
GS
= -10V
V
DS
= -15V, I
D
= -3A
0.1
0.01
2
P
W
= 1s
P
W
= 10s
DC
0
0
2
4
6
8
10
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
May 2019
© Diodes Incorporated
DMP3164LVT
Document number: DS41715
Rev. 2 – 2
DMP3164LVT
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
D=Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 147.9
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
May 2019
© Diodes Incorporated
DMP3164LVT
Document number: DS41715
Rev. 2 – 2
DMP3164LVT
Package Outline Dimensions
TSOT26
D
e1
01( 4x)
TSOT26
Min Max
1.00
0.010 0.100
0.840 0.900
2.800 3.000 2.900
2.800 BSC
1.500 1.700 1.600
Dim
A
A1
A2
D
E
E1
b
Typ
E1/2
E/2
c
E1
E
Gauge Plane
Seating Plane
0
0.300 0.450
0.120 0.200
L
c
e
L2
0.950 BSC
01( 4x)
e1
L
L2
θ
1.900 BSC
0.50
0.250 BSC
8°
e
b
0.30
A2
A1
0°
4°
4°
A
θ1
12°
All Dimensions in mm
Seating Plane
Suggested Pad Layout
TSOT26
C
Dimensions Value
(in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y
X
6 of 7
May 2019
© Diodes Incorporated
DMP3164LVT
Document number: DS41715
Rev. 2 – 2
DMP3164LVT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
May 2019
© Diodes Incorporated
DMP3164LVT
Document number: DS41715
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
