Diodes-Incorporated-DMP31D7LDW-7
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DMP31D7L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
I
D
BV
DSS
R
DS(ON) Max
T
A
= +25°C
-0.58A
0.9
Ω
@ V
GS
= -10V
1.7
Ω
@ V
GS
= -4.5V
-30V
-0.42A
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Package: SOT23
Package
Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Applications
DC-DC Converters
Power Management Functions
e3
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
D
SOT23
D
G
S
G
ESD protected Gate
Gate Protection
Diode
S
Top View
Internal Schematic
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Packing
Part Number
Package
Qty.
3000
10,000
Carrier
Tape & Reel
Tape & Reel
DMP31D7L-7
DMP31D7L-13
SOT23
SOT23
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information abou
t Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) a
nd
<1000ppm antimony compounds.
Marking Information
AN5 = Product Type Marking Code
YM or
= Date Code Marking
YM
= Year (ex: I = 2021)
M = Month (ex: 9 = September)
AN5
Y or
Y
Date Code Key
Year
2019
…
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
G
…
I
J
K
L
M
N
O
P
R
S
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
1
2
3
4
5
6
7
8
9
O
N
D
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November 2021
© Diodes Incorporated
DMP31D7L
Document number: DS41890 Rev. 3 – 2
DMP31D7L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
-0.58
-0.46
Steady State
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D
-0.52
-2.5
Maximum Continuous Body Diode Forward Current (Note 6)
A
A
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
0.43
Unit
W
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Steady State
Steady State
290
°C/W
W
R
ϴ
JA
P
D
0.46
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
270
°C/W
°C
R
ϴ
JA
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -24V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
μ
A
μ
A
Zero Gate Voltage Drain Current
Gate-Source Leakage
T
J
= +25°C
±10
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1
—
—
—
—
0.4
0.7
-0.8
-2.6
0.9
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -0.42A
Static Drain-Source On-Resistance
1.7
V
GS
= -4.5V, I
D
= -0.2A
V
GS
= 0V, I
S
= -0.23A
Diode Forward Voltage
-1.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
19
16
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3
729
0.36
0.1
0.1
30
V
DS
= V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
nC
nC
nC
ns
ns
ns
ns
Q
g
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Q
gs
Q
gd
t
D(ON)
t
R
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47
Ω, R
G
= 10
Ω
,
I
D
= -200mA
74
28
t
D(OFF)
t
F
31
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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November 2021
© Diodes Incorporated
DMP31D7L
Document number: DS41890 Rev. 3 – 2
DMP31D7L
1
1.4
V =
-5.0V
DS
V
= -4.5V
GS
0.9
V
= -10V
GS
0.8
1.2
1.0
V
V
= -4V
GS
0.7
0.6
0.5
0.4
0.3
0.2
0.8
0.6
0.4
= -3.5V
GS
T
= 85°C
A
T
= 125°C
A
T
= 25°C
A
T
A
= 150°C
T
= -55°C
V
= -3V
V
A
GS
0.2
0.0
0.1
0
= -2.5V
GS
V
= -2.3V
GS
0
0.5
1
1.5
2
2.5
3
1
2
3
4
5
V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
1
6
5
4
3
2
1
I
= -0.2A
0.8
V
= -4.5V
D
GS
I
= -0.42A
D
0.6
0.4
V
= -10V
GS
0.2
0
0
0
0
0.2 0.4 0.6
0.8
1
1.2 1.4 1.6 1.8
2
2
4
6
8
10
12
I
D
, DRAIN SOURCE CURRENT (A)
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.2
1
1.8
V
= -10V
GS
1.6
1.4
1.2
T
= 125°C
A
V
= -10V
GS
T
= 150°C
I
= -0.42A
A
D
0.8
0.6
0.4
T
T
= 85°C
= 25°C
A
A
V
I
= -4.5V
GS
= -0.2A
D
1
T
= -55°C
A
0.2
0
0.8
0.6
0
0.2 0.4 0.6
0.8
1
1.2 1.4 1.6
1.8
2
–
5
0
–
2
5
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
0
25
50
75
100 125 150
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
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November 2021
© Diodes Incorporated
DMP31D7L
Document number: DS41890 Rev. 3 – 2
DMP31D7L
1.2
3
2.5
2
1
V
I
= -4.5V
GS
= -0.2A
D
I
= -1mA
D
0.8
0.6
0.4
I
= -250µA
D
1.5
V
I
= -10V
GS
= -0.42A
D
1
0.5
0
0.2
0
–
5
0
–
2
5
0
25
50
75 100
125 150
–
5
0
–
2
5
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
1
100
f = 1MHz
0.8
0.6
0.4
C
iss
T =
125°C
A
T =
85°C
A
C
T =
150°C
T =
25°C
A
o
s
s
A
10
T =
-55°C
A
C
r
s
s
0.2
0
1
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
10
10
R
D
S
(
O
N
)
Limited
P
= 1ms
W
P
= 100µs
W
8
6
4
1
DC
= 10s
P
W
V
I
= -10V
0.1
DS
= -0.24A
P
= 1s
D
W
P
= 100ms
W
P
= 10ms
W
0.01
T
= 150°C
J
(
m
a
x
)
2
0
T
= 25°C
A
V
G
S
= -10V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1
10
100
0
0.1 0.2
0.3 0.4 0.5 0.6 0.7 0.8 0.9
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
1
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
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November 2021
© Diodes Incorporated
DMP31D7L
Document number: DS41890 Rev. 3 – 2
DMP31D7L
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 288.7
℃
/W
Duty Cycle, D = t1 / t2
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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November 2021
© Diodes Incorporated
DMP31D7L
Document number: DS41890 Rev. 3 – 2
DMP31D7L
Package Outline Dimensions
SOT23
All 7°
H
GAUGE PLA
N
E
SOT23
0.25
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
K
K1
0.37
1.20
2.30
0.89
0.45
1.78
2.80
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
G
F
All Dimensions in mm
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
X1
Y
2.0
0.8
1.35
0.9
Y1
C
Y1
2.9
X
X1
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November 2021
© Diodes Incorporated
DMP31D7L
Document number: DS41890 Rev. 3 – 2
DMP31D7L
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS O
R IMPLIED,
1.
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all
companies whose products are represented herein or on Diodes’ websites, harmless against all damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
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November 2021
© Diodes Incorporated
DMP31D7L
Document number: DS41890 Rev. 3 – 2
