Diodes-Incorporated-DMP34M4SPS-13
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DMP34M4SPS
Green
30V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
100% Unclamped Inductive Switch (UIS) Test in Production
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
I
D
BV
DSS
R
DS(ON)
T
C
= +25°C
3.8
mΩ @ V
GS
= -10V
6.0
mΩ @ V
GS
= -5V
-87A
-71A
Low R
DS(ON)
–
Minimizes On State Losses
-30V
<1.1mm Package Profile
–
Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen
and Antimony Free. “Green” Device (Note
3)
Description
This new generation MOSFET is designed to minimize R
DS(ON)
and
yet maintain superior switching performance. This device is ideal for
use in notebook battery power management and load switch.
Mechanical Data
®
Case: PowerDI
5060-8
Case Material:
Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Applications
Switch
PowerDI5060-8
D
S
S
D
D
D
D
Pin1
S
G
G
S
Top View
Pin Configuration
Internal Schematic
Bottom View
Top View
Ordering Information
(Note 4)
Part Number
DMP34M4SPS-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those
which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
PowerDI5060-8
D D
D
D
= Manufacturer
’
s Marking
P34M4SS = Product Type Marking Code
P34M4SS
YY WW
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
February 2019
© Diodes Incorporated
DMP34M4SPS
Document number: DS39884
Rev. 5 – 2
DMP34M4SPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-30
Unit
V
Gate-Source Voltage
±25
V
V
GSS
T
C
= +25°C
-87
-71
A
A
I
D
Continuous Drain Current, V
GS
= -10V (Note
7) (Package Limited)
T
C
= +70°C
T
A
= +25°C
T
A
= +70°C
-21
-17
I
D
I
DM
I
S
Continuous Drain Current, V
GS
= -10V (Note 6)
Pulsed Drain Current (380
μ
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (380
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 8)
-350
-2.9
-350
-60
A
A
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.1mH (Note 8)
180
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
R
Value
1.5
Unit
W
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
94
3.0
°C/W
W
JA
P
D
R
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
47
°C/W
W
JA
100
P
D
R
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
1.4
°C/W
°C
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -24V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
—
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.6
—
—
2.9
4.9
-0.7
-2.6
3.8
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -20A
V
GS
= -5V, I
D
= -20A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
—
6.0
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
3,775
932
500
21
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -15V, V
GS
= 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0
V
, f =
1
MHz
Total Gate Charge
127
24.5
28.5
6.9
nC
nC
nC
ns
ns
ns
ns
ns
nC
Q
g
V
DS
= -15
V
,
V
GS
= -10V,
I
D
= -20A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
4.0
Turn-On Rise Time
V
DD
= -15V, V
GEN
= -10
V
,
R
GEN
= 3
Ω,
I
D
= -20A
Turn-Off Delay Time
372
160
26.5
37.3
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= -20A, di/dt = 500A/µs
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2 of 7
February 2019
© Diodes Incorporated
DMP34M4SPS
Document number: DS39884
Rev. 5 – 2
DMP34M4SPS
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
DS
= -5V
V
GS
= -4.5V
V
GS
= -6.0V
V
GS
= -10.0V
V
GS
= -3.8V
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -3.5V
T
J
= 150
℃
V
GS
= -3.2V
4 5
T
J
= -55
℃
0
0.0
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
3.5
4
4.5
5
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.008
0.007
0.006
0.1
0.08
0.06
0.04
0.02
0
V
= -5V
GS
T
= 150°C
= 125°C
A
T
A
T
= 85°C
= 25°C
A
A
0.005
0.004
0.003
0.002
T
T
= -55°C
A
I
D
= -20A
0
2
4
6
8
10 12 14 16 18 20
0
5
10
I
D
, DRAIN CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Drain Current and Junction
T
e
m
p
e
r
a
ture
0.008
0.005
0.0045
0.004
V
GS
= -10V
T
J
= 150
℃
V
I
= -5V
GS
0.006
0.004
0.002
= -20A
D
T
J
= 125
℃
T
J
= 85
℃
0.0035
0.003
T
J
= 25
℃
T
J
= -55
℃
0.0025
0.002
V
= -10V
= -20A
GS
I
D
0.0015
0.001
0
–
5
0
–
2
5
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Junction
T
e
m
p
e
r
a
ture
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
3 of 7
February 2019
© Diodes Incorporated
DMP34M4SPS
Document number: DS39884
Rev. 5 – 2
DMP34M4SPS
1.6
1.4
1.2
1
3
2.8
2.6
2.4
2.2
2
I
D
= -1mA
V
= -10V
GS
= -20A
I
D
I
D
= -250
μ
A
1.8
1.6
1.4
1.2
1
GS
= -5V
= -20A
D
V
I
0.8
0.6
-50
-25
0
25
50
75
100 125 150
–
5
0
–
2
5
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Junction
T
e
m
p
e
r
a
ture
30
25
20
15
10
5
10000
f = 1MHz
V
GS
= 0V
C
iss
C
oss
1000
T
J
= 85
o
C
T
J
= 125
o
C
C
rss
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= -55
o
C
100
0
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
9
8
7
6
5
4
3
2
1
0
P
W
= 10µs
P
W
= 1µs
R
DS(ON)
Limited
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
V
DS
= -15V, I
D
= -20A
1
DC
10
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= -10V
0.1
0
20
40
60
Q
g
(nC)
Figure 11. Gate Charge
80
100
120
140
0.1
1
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
February 2019
© Diodes Incorporated
DMP34M4SPS
Document number: DS39884
Rev. 5 – 2
DMP34M4SPS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
D=0.005
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.4
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
February 2019
© Diodes Incorporated
DMP34M4SPS
Document number: DS39884
Rev. 5 – 2
DMP34M4SPS
Package Outline Dimensions
PowerDI5060-8
D
D1
PowerDI5060-8
Detail A
c
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
Typ
1.00
0( 4X)
A1
0.41
E1 E
0.330 0.277
5.15 BSC
e
D
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
4.90
3.90
4.10
01 (
4X)
1
b (
8X)
L
e/2
5.60
3.28
3.99
5.80
3.48
4.19
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
Detail A
M1
Θ
Θ1
1.21
11°
7°
G
L1
6°
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y2
X3
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
6 of 7
February 2019
© Diodes Incorporated
DMP34M4SPS
Document number: DS39884
Rev. 5 – 2
DMP34M4SPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
February 2019
© Diodes Incorporated
DMP34M4SPS
Document number: DS39884
Rev. 5 – 2
Mouser Electronics
Authorized Distributor
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