Diodes-Incorporated-DMP4011SPSQ-13
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DMP4011SPS
Green
P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
I
D MAX
BV
DSS
R
DS(ON) MAX
T
C
= +25°C
Fast Switching Speed
-76A
-58A
10m
Ω
@ V
GS
= -10V
14m
Ω
@ V
GS
= -4.5V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Complaint Part is Available Under Separate
-40V
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
®
Case: PowerDI
5060-8
Case Material: Molded Plastic,
“Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
DC-DC Converters
Power Management Functions
Analog Switch
Terminals: Finish
—
100% Matte Tin Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
D
S
S
D
D
D
D
Pin1
G
S
G
S
Top View
Pin Configuration
Internal Schematic
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMP4011SPS-13
Case
PowerDI5060-8
Packaging
2500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm brom
ine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
D
D
D
D
= Manufacturer’s Marking
P4011SP = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 19 = 2019)
WW = Week (01 to 53)
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
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August 2019
© Diodes Incorporated
DMP4011SPS
Document number: DS41674 Rev. 3 – 2
DMP4011SPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
-76
-61
T
C
= +25°C
Steady
State
A
A
Continuous Drain Current (Note 7) V
GS
= -10V
Continuous Drain Current (Note 6)V
GS
= -10V
I
D
T
C
= +70°C
T
A
= +25°C
T
A
= +70°C
-11.7
Steady
State
I
D
-9.4
-300
-8.9
-300
-22
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 1mH
A
A
I
DM
I
S
A
I
SM
I
AS
E
AS
A
Avalanche Energy (Note 8) L = 1mH
250
mJ
Thermal Characteristics
(@T
A
= +25°C
, unless otherwise specified.)
Characteristic
Symbol
Value
1.3
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
Steady State
P
D
R
θ
JA
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
96.4
2.3
°C/W
W
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
55
°C/W
°C/W
°C
R
θ
JA
R
θ
JC
T
J,
T
STG
1.3
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-40
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250
µ
A
V
DS
= -32V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
—
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.0
—
-2.0
6
-2.5
10
14
-1
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
µ
A
V
GS
= -10V, I
D
= -9.8A
V
GS
= -4.5V, I
D
= -9.8A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
—
10
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
-0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2747
508
222
21.4
25
C
iss
C
oss
C
rss
R
g
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
52
Q
g
V
DS
= -20V
I
D
= -9.8A
nC
ns
8.5
11.8
6.6
6.5
222
138
25
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= -10V, V
DD
= -20V,
R
g
= 6
Ω
, I
D
= -1A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= -9.8A, di/dt = -100A/µs
I
F
= -9.8A, di/dt = -100A/µs
17
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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August 2019
© Diodes Incorporated
DMP4011SPS
Document number: DS41674 Rev. 3 – 2
DMP4011SPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
=-4.0V
V
DS
= -5V
V
GS
= -4.5V
V
GS
= -3.5V
V
GS
= -10.0V
T
J
=125
℃
T
J
=85
℃
V
GS
= -3.2V
V
GS
= -3.0V
T
J
=150
℃
T
J
=175
℃
T
J
=25
℃
T
J
=-55
℃
V
GS
= -2.6V
2.5
0
0.0
1
2
3
4
5
0
0.5
1
1.5
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.2
0.18
0.16
0.14
0.12
0.1
0.015
0.012
V
GS
= -4.5V
0.009
0.006
0.08
0.06
0.04
0.02
0
V
GS
= -10V
I
D
= -9.8A
0.003
0.000
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.012
2.2
2
V
GS
= -10V
T
J
=175
℃
T
J
=150
℃
0.01
0.008
0.006
0.004
0.002
1.8
1.6
1.4
1.2
1
V
GS
= -10V, I
D
= -9.8A
T
J
=125
℃
T
J
=85
℃
T
J
=25
℃
T
J
=-55
℃
V
GS
= -4.5V, I
D
= -9.8A
0.8
0.6
0.4
-50 -25
0
25
50
75 100
125 150 175
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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August 2019
© Diodes Incorporated
DMP4011SPS
Document number: DS41674 Rev. 3 – 2
DMP4011SPS
0.02
0.015
0.01
0.005
0
3
2.8
2.6
2.4
2.2
2
V
GS
= -4.5V, I
D
= -9.8A
I
D
= -1mA
1.8
1.6
1.4
1.2
1
I
D
= -250
μ
A
V
GS
= -10V, I
D
= -9.8A
0.8
0.6
0.4
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
50
75 100
125 150 175
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
25
20
15
10
5
10000
1000
100
f=1MHz
C
iss
V
GS
= 0V
C
oss
T
J
= 85
℃
T
J
= 125
℃
T
J
= 25
℃
T
J
= 150
℃
C
rss
T
J
= 175
℃
T
J
= -55
℃
0
0
0.3
0.6
0.9
1.2
0
10
20
30
40
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
8
P
W
=1µs
R
DS(ON)
Limited
6
P
W
=10
m
s
P
W
=100
m
s
P
W
=1ms
V
DS
= -20V, I
D
= -9.8A
4
P
W
=10ms
1
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
P
W
=100ms
2
DC
DUT on Infinite Heatsink
V
GS
= -10V
0
0.1
0
20
40
60
80
100
0.1
1
10
100
Qg (nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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August 2019
© Diodes Incorporated
DMP4011SPS
Document number: DS41674 Rev. 3 – 2
DMP4011SPS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
D=Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.3
℃
/W
Duty Cycle, D = t1 / t2
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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August 2019
© Diodes Incorporated
DMP4011SPS
Document number: DS41674 Rev. 3 – 2
DMP4011SPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
—
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
—
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e/2
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
—
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
6°
G
L1
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
Y2
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
X3
C
G
G1
X
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
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August 2019
© Diodes Incorporated
DMP4011SPS
Document number: DS41674 Rev. 3 – 2
DMP4011SPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
August 2019
© Diodes Incorporated
DMP4011SPS
Document number: DS41674 Rev. 3 – 2
