Diodes-Incorporated-DMP4015SPS-13
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DMP4015SPS
Green
40V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
Features and Benefits
•
•
•
•
•
•
100% Unclamped Inductive Switch (UIS) Test In Production
Low On-Resistance
I
D
V
(BR)DSS
R
DS(on) max
T
A
= +25°C
Fast Switching Speed
-17A
11m
Ω
@ V
GS
= -10V
15m
Ω
@ V
GS
= -4.5V
-40V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-14.5A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
and yet maintain superior switching
Mechanical Data
)
•
•
Case
: POWERDI
®
5060-8
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
•
•
•
Applications
•
•
•
DC-DC Converters
Terminals: Finish – 100% matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (approximate)
Power management functions
Analog Switch
•
D
S
D
Pin1
S
S
G
D
D
G
D
S
Top View
Pin Configuration
Internal Schematic
Bottom View
Top View
Ordering Information
(Note 4)
Part Number
DMP4015SPS-13
Compliance
Standard
Case
Packaging
2,500 / Tape & Reel
POWERDI
®
5060-8
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
= Manufacturer’s Marking
P4015SP = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
P4015SP
YY WW
WW = Week (01 – 53)
G
S
S
S
POWERDI is a registered trademark of Diodes Incorporated
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December 2013
© Diodes Incorporated
DMP4015SPS
Document number: DS35518
Rev. 10 – 2
DMP4015SPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-40
Units
V
V
Gate-Source Voltage
±25
V
GSS
T
A
= +25°C
Steady
State
-8.5
-6.8
A
A
A
A
I
D
I
D
I
D
I
D
T
A
= +70°C
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 6) V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
-13
-10.5
t<10s
Steady
State
-11
-8.7
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
-17
-13.5
t<10s
Pulsed Drain Current (10
μ
s pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Avalanche Current (Note 7)
-100
-3.5
-22
A
A
I
DM
I
S
A
I
AS
E
AS
Avalanche Energy (Note 7)
242
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.3
Units
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
θ
JA
P
D
0.8
96.4
40.6
2.1
T
A
= +70°C
Steady state
t<10s
°C/W
°C/W
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
W
1.4
55
24
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
4.15
-55 to +150
R
θ
JC
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
⎯
⎯
V
µA
nA
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
-1
V
GS
= 0V, I
D
= -250
μ
A
DS
= -40V, V
GS
= 0V
V
I
GSS
±
100
V
GS
=
±
25V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.5
⎯
⎯
⎯
⎯
-2
7
-2.5
11
15
⎯
V
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= -10V, I
D
= -9.8A
Static Drain-Source On-Resistance
m
Ω
R
DS (ON)
9
V
GS
= -4.5V, I
D
= -9.8A
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
26
-0.7
S
V
|Y
fs
|
V
SD
V
DS
= -20V, I
D
= -9.8A
V
GS
= 0V, I
S
= -1A
-1
4234
1036
526
C
iss
C
oss
C
rss
R
G
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
7.77
47.5
14.2
13.5
13.2
10
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
V
DS
= -20V, V
GS
= -5V
I
D
= -9.8A
Gate-Source Charge
Gate-Drain Charge
nC
Q
gs
Q
gd
t
D(on)
t
r
Turn-On Delay Time
Turn-On Rise Time
V
GS
= -10V, V
DD
= -20V, R
G
= 6
Ω
,
I
D
= -1A, R
L
= 20
Ω
ns
Turn-Off Delay Time
302.7
137.9
t
D(off)
t
f
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. UIS in production with L = 0.1mH, TJ = +25°C
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated
2 of 6
December 2013
© Diodes Incorporated
DMP4015SPS
Document number: DS35518
Rev. 10 – 2
DMP4015SPS
30
25
30
25
20
15
10
5
-V =4.0V
GS
-V =3.5V
GS
20
15
-V =4.5V
GS
-V =10V
GS
-V =3.0V
10
GS
5
0
0
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.02
0.015
0.01
0.005
0
0.02
0.015
0.01
T
= 150
°
C
A
-V =
4.5V
GS
T
= 125
°
C
A
T
= 85
°
C
A
T
A
= 25
°
C
T
= -55
°
C
A
0.005
0
0
0
5
10
15
20
25
30
5
10
15
20
25
30
-I
D
, DRAIN SOURCE CURRENT
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
1.6
0.02
0.016
0.012
0.008
0.004
0
-V =
4.5V
GS
-I =
5.0A
1.4
1.2
D
V
I
= 10V
GS
1
0.8
0.6
= 10A
D
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 6
On-Resistance Variation with
T
e
mperature
0
25
50
75
100 125 150
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 5
On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
°
C)
°
C)
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December 2013
© Diodes Incorporated
DMP4015SPS
Document number: DS35518
Rev. 10 – 2
DMP4015SPS
2.4
30
25
20
15
2
1.6
1.2
10
5
0.8
0.4
0
0
0
-50 -25
0
25
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient
T
emperature
50
75 100
125 150
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1000
10000
f = 1MHz
T
=150°C
A
C
ISS
1000
100
T
=125°C
T
A
=85°C
A
C
OSS
100
10
1
T
=25°C
C
A
RSS
0.1
10
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE(V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
10
8
90
600
500
Starting Temperature (T ) = 25°C
J
80
70
E
AS
400
300
200
60
50
40
6
4
2
I
AS
30
20
100
0
10
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1.0
INDUCTOR (mH)
20
40
60
80
100
120
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
Fig. 12 Single-Pulse Avalanche
T
e
sted
POWERDI is a registered trademark of Diodes Incorporated
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December 2013
© Diodes Incorporated
DMP4015SPS
Document number: DS35518
Rev. 10 – 2
DMP4015SPS
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
R
(t) = r(t) * R
θ
JA
D = 0.05
θ
JA
R
= 97°C/W
θ
JA
D = 0.02
P(pk)
t
1
0.01
D = 0.01
t
2
T
– T
= P * R
(t)
J
A
θ
JA
D = 0.005
Duty Cycle, D = t
/t
1
2
DUT mounted on FR-4 PCB with
minimum recommended pad layout
D = Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 13 Transient Thermal Response
Package Outline Dimensions
D
POWERDI5060-8
Dim Min Max
0.90 1.10 1.00
0.00 0.05
0.33 0.51 0.41
Detail A
D1
Typ
O (4X)
A
A1
b
–
c
A1
b2
0.200 0.350 0.273
b3
c
D
0.40 0.80 0.60
0.230 0.330 0.277
5.15 BSC
E1 E
e
D1
D2
D3
E
4.70 5.10 4.90
3.70 4.10 3.90
3.90 4.30 4.10
6.15 BSC
O (4X)
1
E1
E2
E3
e
G
K
5.60 6.00 5.80
3.28 3.68 3.48
3.99 4.39 4.19
1.27 BSC
b (8X)
L
e/2
1
b2 (4X)
D3
D2
K
0.51 0.71 0.61
0.51
–
–
L
0.51 0.71 0.61
A
b3 (4X)
E3
L1
0.050 0.20 0.175
E2
M
M
M1
Θ
3.235 4.035 3.635
1.00 1.40 1.21
M1
Detail A
10º
6º
12º
8º
11º
7º
Θ
1
G
L1
All Dimensions in mm
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December 2013
© Diodes Incorporated
DMP4015SPS
Document number: DS35518
Rev. 10 – 2
DMP4015SPS
Suggested Pad Layout
X4
Y2
Dimensions
Value (in mm)
X3
C
G
G1
X
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y
4x
X
G
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated
6 of 6
December 2013
© Diodes Incorporated
DMP4015SPS
Document number: DS35518
Rev. 10 – 2
