Diodes-Incorporated-DMP4050SSD-13
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A Product Line of
Diodes Incorporated
DMP4050SSD
40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
I
D
Low On-Resistance
V
(BR)DSS
R
DS(on)
Max
T
A
= +25°C
-5.2A
Fast Switching Speed
50m
@ V
GS
= -10V
79m
@ V
GS
= -4.5V
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-40V
-4.1A
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish – Matte Tin annealed over Copper lead frame.
Applications
Motor Control
Backlighting
DC-DC Converters
Power Management Functions
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D1
D2
S2
SO-8
S1
G1
S2
D1
D1
D2
D2
G1
G2
G2
S1
Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP4050SSD-13
DMP4050SSDQ-13
Qualification
Standard
Automotive
Case
SO-8
SO-8
Packaging
2500 / Tape & Reel
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturer’s Marking
P4050SD = Product Type Marking Code for DMP4050SSD-13
P4050DQ = Product Type Marking Code for DMP4050SSDQ-13
YYWW = Date Code Marking
P4050DQ
YY
P4050SD
WW
YY
WW
YY = Year (ex: 09 = 2009)
WW = Week (01-53)
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April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
A Product Line of
Diodes Incorporated
DMP4050SSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
Unit
V
Drain-Source Voltage
-40
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 5)
V
V
GS
20
-5.2
(Notes 9 & 11)
T
A
= +70°C (Notes 7 & 9)
(Notes 6 & 9)
(Notes 8 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
-4.2
A
V
GS
= 10V
I
D
-4.0
-20.0
-3.2
A
A
A
V
GS
= 10V
I
DM
I
S
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
-20.0
I
SM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
1.25
10.0
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
Power dissipation
1.8
14.3
W
P
D
Linear derating factor
mW/°C
2.14
17.2
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
100
70
Thermal Resistance, Junction to Ambient
R
θ
JA
°C/W
°C
58
Thermal Resistance, Junction to Lead
Operating and storage temperature range
53
R
JL
-55 to +150
T
J
, T
STG
Notes:
5. AEC-Q101 V
GS
maximum is
16V.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (3), except the device is measured at t
10 sec.
8. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs.
The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
2 of 8
April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
A Product Line of
Diodes Incorporated
DMP4050SSD
Thermal Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
R
DS(on)
Limited
10
1
Two active die
DC
1s
100m
10m
1m
100ms
10ms
Single Pulse
T
amb
=25°C
One active die
1ms
100µs
10
One active die
100m
1
0
20 40 60 80
100 120 140 160
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
T
amb
=25°C
Single Pulse
T
amb
=25°C
One active die
100
10
1
One active die
D=0.5
Single Pulse
D=0.05
D=0.1
D=0.2
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
3 of 8
April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
A Product Line of
Diodes Incorporated
DMP4050SSD
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-40
V
BV
DSS
I
DSS
I
D
= -250µA , V
GS
= 0V
V
DS
= -40V, V
GS
= 0V
-0.5
100
µA
nA
I
GSS
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
-1.0
-3.0
0.050
0.079
V
V
GS(th)
0.038
0.055
14
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -5A
V
DS
= -15V, I
D
= -6A
I
S
= -6A, V
GS
= 0V
Static Drain-Source On-Resistance (Note 12)
Ω
R
DS(ON)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse recovery time (Note 13)
Reverse recovery charge (Note 13)
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
S
V
g
fs
V
SD
t
rr
-0.86
18
-1.2
ns
nC
I
S
= -2A, di/dt = 100A/µs
12.7
Q
rr
674
115
67.7
6.9
pF
pF
pF
nC
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 14)
Total Gate Charge (Note 14)
Gate-Source Charge (Note 14)
Gate-Drain Charge (Note 14)
Turn-On Delay Time (Note 14)
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
V
GS
= -4.5V
13.9
2
Q
g
V
DS
= -20V
I
D
= -6A
Q
gs
Q
gd
t
D(on)
t
r
V
GS
= -10V
3.4
1.9
3.1
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -1A, R
G
6.0
31.5
12.6
ns
t
D(off)
t
f
ns
Notes:
12. Measured under pulsed conditions. Pulse width
300
s; duty cycle
2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
4 of 8
April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
A Product Line of
Diodes Incorporated
DMP4050SSD
Typical Characteristics
10V
10V
4V
T = 150°C
T = 25°C
10
4V
3.5V
3V
3.5V
10
1
3V
2.5V
1
2.5V
2V
0.1
0.1
0.01
-V
G
S
-V
G
S
0.01
0.1
1
10
0.1
1
10
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
10
1
-V
DS
= 10V
1.6
1.4
1.2
1.0
0.8
0.6
V
G
S
= -10V
I
D
= -12A
R
DS(on)
T = 150°C
T = 25°C
V
G
S(th)
V
G
S
= V
DS
I
D
= -250uA
0.1
1.5
2.0
2.5
3.0
3.5
-50
0
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction
Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
T = 25°C
-V
G
S
2.5V
10
3V
T = 150°C
1
1
0.1
3.5V
T = 25°C
0.1
4V
4.5V
0.01
10V
1E-3
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
-V
SD
Source-Drain Voltage (V)
-I
D
Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
5 of 8
April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
A Product Line of
Diodes Incorporated
DMP4050SSD
Typical Characteristics –
(cont.)
1000
800
10
8
V
G
S
= 0V
f = 1MHz
C
ISS
600
6
C
O
SS
C
R
SS
400
4
V
DS
= -20V
I
D
= -6A
200
0
2
0
0.1
1
10
0
2
4
6
8
10
12
14
Q – Charge (nC)
-V
DS
– Drain – Source Voltage (V)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
Current
regulator
Q
G
50k
Same as
D.U.T
0.2
F
12V
Q
GS
Q
GD
V
G
V
DS
I
G
D.U.T
I
D
V
GS
Charge
Basic gate charge waveform
Gate charge test circuit
V
DS
90%
R
D
V
GS
V
DS
R
G
V
DD
10%
V
GS
Pulse width
Ͻ
1
S
Duty factor 0.1%
t
r
t
d(off)
t
r
t
d(on)
t
(on)
t
(on)
Switching time waveforms
Switching time test circuit
6 of 8
April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
A Product Line of
Diodes Incorporated
DMP4050SSD
Package Outline Dimensions
SO-8
Min
–
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
Detail ‘A’
7
°~
9
°
h
°
45
1.27 Typ
h
L
–
0.35
0.82
8
Detail ‘A’
A2
A3
A
0.62
0
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value
(in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
7 of 8
April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
A Product Line of
Diodes Incorporated
DMP4050SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
8 of 8
April 2013
© Diodes Incorporated
DMP4050SSD
Document Number DS32107 Rev 3 – 2
