Diodes-Incorporated-DMP45H150DHE-13
| Part # | Diodes-Incorporated-DMP45H150DHE-13 |
Download  | Diodes-Incorporated-DMP45H150DHE-13 |
DMP45H150DHE
450V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Gate Drive
I
D
BV
DSS
R
DS(ON)
T
A
= +25°C
Low Input Capacitance
Fast Switching Speed
-450V
-0.25A
150
Ω
@ V
GS
= -10V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green”
Device (Note 3)
Mechanical Data
Description
Case: SOT223
This 450V enhancement mode P-channel MOSFET provides users
with a competitive specification offering efficient power handling
capability, high impedance and is free from thermal runaway and
thermally induced secondary breakdown. Applications benefiting from
this device include a variety of Telecom and general high voltage
switching circuits.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Load Switching
Uninterrupted Power Supply
D
SOT223
G
S
Pin Out – Top View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP45H150DHE-13
Qualification
Standard
Case
SOT223
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm
bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturer’s Marking
P450H2 = Marking Code
YWW = Date Code Marking
Y or Y= Year (ex: 7 = 2017)
WW = Week (01 to 53)
YWW
P450H2
1 of 6
October 2017
© Diodes Incorporated
DMP45H150DHE
Document Number DS39212 Rev. 3 – 2
DMP45H150DHE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
Unit
V
-450
±30
Gate-Source Voltage
V
V
GSS
T
C
= +25°C
T
C
= +70°C
-0.25
-0.20
A
Continuous Drain Current (Note 5) V
GS
=- 10V
I
D
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Energy (Note 6) L=60mH
-0.45
-0.45
4
A
A
I
DM
I
S
mJ
A
E
AS
I
AS
Avalanche Current (Note 6) L=60mH
0.25
4.5
Peak Diode Recovery dv/dt (I
SD
≤
1.0A, di/dt
≤
1
00A/μs
)
dv/dt
V/ns
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
13.9
8.9
59.4
W
°C/W
W
°C/W
°C
T
C
= +25°C
Total Power Dissipation (Note 6)
T
C
= +70°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
P
D
(Note 6)
(Note 6)
R
θ
JA
R
θ
JC
8.9
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-450
V
-1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -450V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
µA
nA
Gate-Source Leakage
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 6)
Input Capacitance
±100
I
GSS
-2.0
-3.0
-0.8
-4.0
150
-1.2
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -50mA
V
GS
= 0V, I
S
= -50mA
59.2
11
1
40
C
ISS
C
OSS
C
RSS
g
FS
Output Capacitance
pF
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
Forward Transconductance
Gate Resistance
ms
V
DS
=-25V,I
D
=-50mA
50
1.8
0.3
0.9
12
9
Ω
R
G
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
G
V
DS
= -225V, I
D
= -100mA, V
GS
= –
10V
Gate-Source Charge
nC
ns
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= -225V, R
G
= 3.0
Ω
, I
D
= -100mA
19
87
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
V
GS
= 0V, I
S
= -100mA,V
DD
=-100V,
di/dt = 100A/
μ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
108
391
ns
t
RR
V
GS
= 0V, I
S
=-100mA,
V
DD
=-100V ,di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1 inch square copper pad layout.
6. Guaranteed by design. Not subject to production testing.
2 of 6
October 2017
© Diodes Incorporated
DMP45H150DHE
Document Number DS39212 Rev. 3 – 2
DMP45H150DHE
0.1
0.08
0.06
0.04
0.02
0
0.2
0.2
0.2
0.1
0.1
0.1
0.1
0.1
0.0
0.0
0.0
V
DS
= -10V
V
GS
= -6.0V
V
GS
= -8.0V
V
GS
= -10.0V
V
GS
= -4.5V
V
GS
=-5.0V
125
℃
85
℃
V
GS
= -4.0V
V
GS
= -3.5V
150
℃
25
℃
-55
℃
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1.Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
200
180
160
140
120
100
80
50
45
40
35
30
V
GS
= -10V
60
I
D
= -50mA
40
20
0
0
0.02 0.04 0.06 0.08
0.1 0.12
0.14 0.16 0.18
0.2
I
D
, DRAIN-SOURCE CURRENT (A)
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
120
90
60
30
0
3
2.5
2
V
GS
= -10V
150
℃
125
℃
85
℃
1.5
1
25
℃
V
GS
= 10V, I
D
= 0.6A
0.5
0
-55
℃
-50 -25
0
25
50
75
100 125 150
0
0.04
0.08
0.12
0.16
0.2
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
3 of 6
October 2017
© Diodes Incorporated
DMP45H150DHE
Document Number DS39212 Rev. 3 – 2
DMP45H150DHE
100
80
60
40
20
0
5
4
3
2
1
I
D
= -1mA
I
D
= -250
μ
A
V
GS
= -10V, I
D
= -50mA
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0.2
0.18
0.16
0.14
0.12
0.1
1000
f=1MHz
V
GS
= 0V
100
10
1
C
iss
C
oss
0.08
0.06
0.04
0.02
0
T
A
= 85
o
C
T
A
= 125
o
C
T
A
= 25
o
C
C
rss
T
A
= 150
o
C
T
A
= -55
o
C
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
35
40
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
1
10
8
P
W
=100µs
R
DS(ON)
Limited
0.1
0.01
6
P
W
=1ms
P
W
=10ms
P
W
=100ms
4
V
DS
= -225V, I
D
= -100mA
P
W
=1s
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= -10V
2
P
W
=10s
DC
0
0.001
0
0.2 0.4 0.6 0.8
Qg (nC)
Figure 11. Gate Charge
1
1.2 1.4 1.6 1.8
2
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 6
October 2017
© Diodes Incorporated
DMP45H150DHE
Document Number DS39212 Rev. 3 – 2
DMP45H150DHE
Package Outline Dimensions
SOT223
D
Q
b1
C
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1
0.010 0.15
0.05
A
E
E1
b
b1
C
D
E
E1
e
e1
L
0.60 0.80 0.70
2.90 3.10 3.00
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
Gauge
Plane
0.25
Seating
Plane
L
e1
–
–
–
–
4.60
2.30
b
e
0.85 1.05 0.95
0.84 0.94 0.89
Q
A
A1
7°
All Dimensions in mm
Suggested Pad Layout
SOT223
X1
Y1
C1 Y2
Y
Dimensions Value
(in mm)
C
C1
X
2.30
6.40
1.20
3.30
1.60
1.60
8.00
X1
Y
Y1
Y2
C
X
5 of 6
October 2017
© Diodes Incorporated
DMP45H150DHE
Document Number DS39212 Rev. 3 – 2
DMP45H150DHE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
6 of 6
October 2017
© Diodes Incorporated
DMP45H150DHE
Document Number DS39212 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
