Diodes-Incorporated-DMP6023LSS-13
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DMP6023LSS
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
V
(BR)DSS
R
DS(ON)
max
T
A
= +25°C
Fast Switching Speed
Low Threshold
25m
Ω
@ V
GS
= -10V
33m
Ω
@ V
GS
= -4.5V
-6.6A
-5.8A
Low Gate Drive
-60V
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram Below
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Backlighting
Power Management Functions
DC-DC Converters
D
SO-8
S
D
S
S
G
D
D
G
D
S
TOP VIEW
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMP6023LSS-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are
defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
8
5
= Manufacturer’s Marking
P6023LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Last Digit of Year (ex: 14 = 2014)
WW = Week Code (01 – 53)
P6023LS
YY WW
1
4
1 of 6
January 2015
© Diodes Incorporated
DMP6023LSS
Document number: DS37198
Rev. 2 – 2
DMP6023LSS
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-60
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C
T
A
= +70°C
-6.6
-5.3
A
Continuous Drain Current (Note 6) V
GS
= -10V
I
D
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
-50
-1.8
A
A
I
DM
I
S
-35.5
62.9
A
I
AS
E
AS
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
R
Value
Units
W
1.2
100
1.6
75
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
JA
°C/W
12
R
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1
—
—
—
—
—
-3
25
V
m
Ω
V
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
—
33
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-0.7
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
2569
179
143
8
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
26.5
53.1
7.1
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Total Gate Charge (V
GS
= -4.5V,)
Total Gate Charge (V
GS
= -10V),
Gate-Source Charge
Q
g
Q
g
V
DS
= -30V, I
D
= -5A
Q
gs
Q
gd
t
D(on)
t
r
12.6
6
Gate-Drain Charge
Turn-On Delay Time
7.1
Turn-On Rise Time
V
GS
= -10V, V
DS
= -30V,
R
G
= 3
Ω
, I
D
= -5A
110
Turn-Off Delay Time
t
D(off)
t
f
62
20
14
Turn-Off Fall Time
Body Diode Reverse Recovery Time
t
rr
I
F
= -5A, di/dt = 10
0A/μs
Body Diode Reverse Recovery Charge
Q
rr
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 6
January 2015
© Diodes Incorporated
DMP6023LSS
Document number: DS37198
Rev. 2 – 2
DMP6023LSS
30
25
30
25
20
Vds=-5.0V
V
= -3.5V
GS
T
= 150°C
A
V
= -4.0V
GS
20
15
10
V
= -4.5V
GS
T
= 125°C
A
V
= -5.0V
GS
15
10
V
= -10V
GS
T
= 85°C
A
V
= -3.0V
= -2.8V
GS
T
= 25°C
A
5
0
5
0
V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
4
4.5
5
3.5
0
1
2
3
4
5
V
gs
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
V
D
S
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
0.04
0.2
0.18
0.16
0.14
0.12
0.1
0.035
0.03
0.025
0.02
V
= -4.5V
= -10V
GS
V
GS
I
= -5.0A
D
0.015
0.01
0.08
0.06
0.04
0.02
0
I
= -4.0A
D
0.005
0
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Transfer Characteristics
0.05
0.04
0.03
0.02
2
V
= -4.5V
GS
1.8
T
= 150°C
A
V
I
= -10V
GS
= -10A
T
= 125°C
A
D
1.6
1.4
T
= 85°C
A
V
I
= -4.5V
GS
= -5.0A
1.2
1
T
= 25°C
A
D
T
= -55°C
A
0.8
0.6
0.4
0.01
0
0
5
10
15
20
25
30
–
5
0
–
2
5
0
25
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100
125 150
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
3 of 6
January 2015
© Diodes Incorporated
DMP6023LSS
Document number: DS37198
Rev. 2 – 2
DMP6023LSS
0.05
3
2.8
0.045
2.6
2.4
2.2
0.04
V
I
= -4.5V
GS
= -5A
I
= -1mA
D
0.035
0.03
D
2
1.8
1.6
1.4
1.2
I
= -250µA
D
V
I
= -10V
GS
0.025
0.02
= -10A
D
1
0.015
0.01
0.8
0.6
0.4
0.2
0.005
0
0
50
0
25
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100 125
150
–
5
0
–
2
5
0
25
75 100 125 150
–
5
0
–
2
5
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
30
25
10000
f = 1MHz
C
iss
T
= 150°C
A
20
15
10
5
T
= 125°C
A
1000
T
= 85°C
A
C
o
s
s
T
= 25°C
A
C
r
s
s
20
T
= -55°C
A
0
0
100
0
5
10
15
25
30
35
40
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
10
9
100
10
R
D
S
(
on)
Limi
t
e
d
8
7
6
5
4
DC
V
I
= -30V
P
= 10s
DS
W
1
= -5A
D
P
= 1s
W
P
= 100ms
W
P
= 10ms
3
2
1
W
T
J
(max)
= 150°C
T
A
= 25°C
0.1
P
= 1ms
W
P
= 100µs
V
GS
=10V
W
Single Pul
s
e
DUT on 1 * MRP Board
0
0
0.01
5
10 15 20 25 30 35 40 45 50 55
0.1
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
4 of 6
January 2015
© Diodes Incorporated
DMP6023LSS
Document number: DS37198
Rev. 2 – 2
DMP6023LSS
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
D = 0
.
0
05
0.01
R
t
h
ja
(t) = r(t) * R
t
h
ja
R
t
h
ja
= 100°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13
Transient Thermal Resistance
Package Outline Dimensions
SO-8
Min
–
0.10
1.30
0.15
0.3
Dim
Max
1.75
0.20
1.50
0.25
0.5
E1
E
A
A1
A2
A3
b
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7
°~
9
°
h
°
45
Detail ‘A’
A2
A3
1.27 Typ
A
h
L
–
0.35
0.82
8°
b
e
0.62
0°
D
All Dimensions in mm
Suggested Pad Layout
X
Dimensions Value
(in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
5 of 6
January 2015
© Diodes Incorporated
DMP6023LSS
Document number: DS37198
Rev. 2 – 2
DMP6023LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
6 of 6
January 2015
© Diodes Incorporated
DMP6023LSS
Document number: DS37198
Rev. 2 – 2
