Diodes-Incorporated-DMP6050SPS-13
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Green
DMP6050SPS
60V P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
I
D
BV
DSS
R
DS(ON)
T
C
= +25°C
Low R
DS(ON)
–
Minimizes On State Losses
Low Input Capacitance
-26A
-22A
50m
@ V
GS
= -10V
70m
@ V
GS
= -4.5V
-60V
Fast Switching Speed
<1.1mm Package Profile
–
Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This new generation 60V P-Channel Enhancement Mode MOSFET is
designed to minimize R
DS(ON)
and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and loadswitch.
Mechanical Data
®
Case: PowerDI
5060-8
Case Material:
Molded Plastic, “Green” Molding Compound; UL
Flammability Classification Rating 94V-0
Notebook Battery Power Management
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
Loadswitch
D
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
G
S
Top View
Pin Configuration
Top View
Internal Schematic
Bottom View
Ordering Information
(Note 4)
Part Number
DMP6050SPS-13
Case
PowerDI5060-8
Packaging
2500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
= Manufacturer
’
s Marking
P6050SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 18 = 2018)
WW = Week Code (01 to 53)
P6050SS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
January 2018
© Diodes Incorporated
DMP6050SPS
Document number: DS40042
Rev. 3 – 2
DMP6050SPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
-5.7
-4.5
A
Continuous Drain Current (Note 6) V
GS
= -10V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
-45
-2.4
-45
-25
32
A
A
I
DM
I
S
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
A
I
SM
I
AS
E
AS
A
Repetitive Avalanche Energy (Note 8) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
Value
1.3
Unit
W
P
D
R
θJA
95
2.4
°C/W
W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 5)
Power Dissipation (Note 6)
P
D
52
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 6)
Thermal Resistance, Junction to Case @ T
C
= +25°C (Note 7)
Operating and Storage Temperature Range
R
θJA
2.4
R
θJC
T
J
, T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
—
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.0
—
—
43
-3.0
50
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -5A
V
GS
= -4.5V, I
D
= -4A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
—
53
70
Diode Forward Voltage
—
-0.7
-1.2
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
2163
88
58
13
30
14
5
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Q
g
Q
g
V
DS
= -30V, I
D
= -5A
Q
gs
Q
gd
t
D(ON)
t
R
4.6
4.7
2.7
73
25
18
12
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= -10V, V
DS
= -30V,
R
G
= 3
Ω
, I
D
= -5A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
RR
I
F
= -5A, di/dt = 10
0A/μs
I
F
= -5A, di/dt = 10
0A/μs
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
2 of 7
January 2018
© Diodes Incorporated
DMP6050SPS
Document number: DS40042
Rev. 3 – 2
DMP6050SPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
= -10V
V
DS
= -5V
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -5.0V
V
GS
= -3.5V
V
GS
= -3.0V
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= -2.6V
4
0.0
0
0
1
2
3
5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.5
0.45
0.4
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.35
0.3
V
GS
= -4.5V
0.25
0.2
I
D
= -5.0A
I
D
= -4.0A
V
GS
= -10V
0.15
0.1
0.05
0
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.1
0.08
0.06
0.04
0.02
0
1.8
1.6
1.4
1.2
1
V
GS
= -10V
V
GS
= -10V, I
D
= -5.0A
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= -4.5V, I
D
= -4.0A
0.8
0.6
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
3 of 7
January 2018
© Diodes Incorporated
DMP6050SPS
Document number: DS40042
Rev. 3 – 2
DMP6050SPS
2.4
2.2
2
0.1
0.08
0.06
0.04
0.02
I
D
= -1mA
V
GS
= -4.5V, I
D
= -4.0A
1.8
1.6
1.4
1.2
1
I
D
= -250
μ
A
V
GS
= -10V, I
D
= -5.0A
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
30
25
20
15
10
5
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
T
J
= 85
o
C
C
oss
T
J
= 125
o
C
T
J
= 25
o
C
C
rss
T
J
= 150
o
C
T
J
= -55
o
C
0
10
0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
60
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10.Typical Junction Capacitance
100
10
1
10
8
P
W
= 1µs
R
DS(ON)
Limited
6
P
W
= 10µs
P
W
= 100µs
4
P
W
= 1ms
P
W
= 10ms
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite Heatsink
V
GS
= -10V
P
W
= 100ms
DC
V
DS
= -30V, I
D
= -5.0A
2
0
0.1
0
4
8
12
16
20
24
28
32
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
4 of 7
January 2018
© Diodes Incorporated
DMP6050SPS
Document number: DS40042
Rev. 3 – 2
DMP6050SPS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
0.001
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 2.4
℃
/W
Duty Cycle, D = t1 / t2
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
January 2018
© Diodes Incorporated
DMP6050SPS
Document number: DS40042
Rev. 3 – 2
DMP6050SPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
–
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
–
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e/2
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
–
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
G
L1
6°
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
X3
Y2
Y1
Dimensions
Value (in mm)
1.270
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
Y3
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
6 of 7
January 2018
© Diodes Incorporated
DMP6050SPS
Document number: DS40042
Rev. 3 – 2
DMP6050SPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
January 2018
© Diodes Incorporated
DMP6050SPS
Document number: DS40042
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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