Diodes-Incorporated-DMP6110SFDF-13
| Part # | Diodes-Incorporated-DMP6110SFDF-13 |
Download  | Diodes-Incorporated-DMP6110SFDF-13 |
DMP6110SFDF
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
Low Gate Threshold Voltage
Low Input Capacitance
110m
Ω @ V
GS
= -10V
130m
Ω @ V
GS
= -4.5V
-4.2A
-3.9A
Fast Switching Speed
-60V
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
s 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
An Automotive-Compliant Part is Available Under Separate
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it ideal
for high-efficiency power management applications.
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.007 grams (Approximate)
Battery Management Application
Power Management Functions
DC-DC Converters
U-DFN2020-6 (Type F)
D
G
Pin 1
S
Pin Out
Bottom View
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP6110SFDF-7
DMP6110SFDF-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more
information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
1 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
DMP6110SFDF
Marking Information
Site 1:
P0 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
P0
M = Month (ex: 9 = September)
Date Code Key
Year
2015
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
C
…
H
I
J
K
L
M
N
O
P
R
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2:
P0 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
P0
Date Code Key
Year
2015
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
5
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
2 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
DMP6110SFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-60
Unit
V
Gate-Source Voltage
V
20
V
GSS
Steady
State
T
A
= +25°C
-3.5
-2.8
A
A
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= -10V
-4.2
-3.4
t<10s
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
-20
-2.1
-19
18
A
A
I
DM
T
A
= +25°C
I
S
I
AS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.76
0.47
167
121
1.97
1.30
64
Unit
T
A
= +25°C
Total Power Dissipation (Note 5)
T
A
= +70°C
W
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
t<10s
°C/W
W
R
θ
JA
P
D
T
A
= +25°C
Total Power Dissipation (Note 6)
T
A
= +70°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
t<10s
42
°C/W
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
8
R
θ
JC
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -48V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
±100
I
GSS
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
-1
—
—
—
—
-3
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -4.5A
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= 0V, I
S
= -1A
110
130
-1.2
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
-0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
969
58
C
iss
C
oss
C
rss
R
G
V
DS
= -30V, V
GS
= 0V, f =
1.0MHz
Output Capacitance
pF
44
Reverse Transfer Capacitance
Gate Resistance
14
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
8.2
17.2
3.0
3.1
4.4
23
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
G
Q
G
nC
ns
V
DS
= -30V, I
D
= -12A
Q
GS
Q
GD
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= -10V, V
DS
= -30V, R
GEN
6
Ω
, I
D
= -12A
=
34
Turn-Off Delay Time
t
D(OFF)
t
F
42
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
13.2
6.2
ns
t
RR
I
S
= -12A, di/dt = -100A/
μ
s
I
S
= -12A, di/dt = -100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
3 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
DMP6110SFDF
30
25
20
15
10
20
15
10
V
= -10V
GS
V
= -5.0V
V
= -5V
V
DS
GS
= -4.5V
= -4.0V
GS
V
V
GS
GS
= -3.5V
T
= 150°C
A
T
= 85°C
A
5
T =
25°C
A
T
= 125°C
A
V
V
= -3.0V
= -2.8V
GS
5
0
T
= -55°C
A
GS
0
0
0.5
1
1.5
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristic
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
0.15
0.12
0.09
0.06
0.03
0.3
0.25
0.2
I
= -4.5A
D
V
= -4.5V
GS
0.15
V
= -10V
GS
0.1
0.05
0
I
= -3.5A
D
0
0
2
4
6
8
10 12 14 16 18 20
0
5
10
15
20
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Transfer Characteristic
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
0.15
0.12
0.09
2.5
2
V
= -10V
GS
T
= 150°C
A
V
G
S
= -10V
I
= -4.5A
D
T
= 125°C
= 85°C
A
T
A
1.5
1
V
GS
= -4.5V
T
= 25°C
A
I
= -3.5A
D
0.06
T
= -55°C
A
0.03
0
0.5
0
1
6
11
16
21
–
5
0
–
2
5
0
25
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
50
75 100 125
150
I
D
, DRAIN CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
4 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
DMP6110SFDF
2.5
2
0.15
0.12
0.09
0.06
0.03
0
I
D
= -1mA
V
GS
= -4.5V
I
D
= -3.5A
1.5
1
I
D
= -250µA
V
GS
=
–
1
0V
= -4.5A
I
D
0.5
0
–
5
0
–
2
5
0
25
50
75 100 125
150
–
5
0
–
2
5
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs.
Junction Temperature
20
18
10000
1000
100
f=
1
MHz
16
14
12
T =
150°C
A
C
iss
T
= 25°C
A
T
= 125°C
A
10
8
T
= 85°C
A
T
= -55°C
A
C
o
s
s
6
4
C
r
s
s
2
0
10
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
10
8
100
10
1
R
DS(ON)
Limited
V
= -30V
P
= 100µs
DS
W
I
= -5A
D
6
DC
P
= 10s
P
W
= 1s
W
4
P
= 100ms
0.1
0.01
W
P
= 10ms
W
T
J
(max)
= 150°C
T
C
= 25°C
P
= 1ms
W
2
V
GS
= -10V
Single Pul
s
e
DUT on 1 * MRP Board
0
0.001
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
5 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
DMP6110SFDF
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
D = 0
.
0
1
0.01
D = 0
.
0
05
R
JA
(t) = r(t) * R
JA
R
JA
= 163°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
6 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
DMP6110SFDF
Package Outline Dimension
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
A3
A1
A
Dim
A
A1
A3
b
Min Max
0.57
0.63
0.00 0.05
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
z2
0.65 BSC
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
0.15 BSC
D2
E
E2
k1
k1
k2
L
e2
L
k
0.36 BSC
0.225 0.325
0.275
0.20 BSC
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
z(4x)
All Dimensions in mm
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
7 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
DMP6110SFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without
further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or
use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights,
nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use
and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against
all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
March 2020
© Diodes Incorporated
DMP6110SFDF
Document number: DS38492 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
