Diodes-Incorporated-DMP6350SQ-7
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DMP6350S
60V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
Max
T
A
= +25°C
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
Fast Switching Speed
-1.5A
-1.2A
350
mΩ @ V
GS
= -10V
550
mΩ @ V
GS
= -4.5V
Low Input/Output Leakage
-60V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: SOT23
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
D
D
G
S
G
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMP6350S-7
DMP6350S-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and
<1000ppm antimony compounds.
Marking Information
P35 = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: D = 2016)
M = Month (ex: 9 = September)
P35
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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May 2016
© Diodes Incorporated
DMP6350S
Document number: DS38474 Rev. 3 – 2
DMP6350S
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
-1.5
-1.2
A
A
Continuous Drain Current (Note 6), V
GS
= -10V
I
D
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
-6
I
DM
Thermal Characteristics
Characteristic
Symbol
P
D
Value
0.72
Unit
W
Power Dissipation (Note 5)
176
°C/W
W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Power Dissipation (Note 6)
R
θ
JA
1.17
P
D
108
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Thermal Resistance, Junction to Case
R
θ
JA
34
R
θ
JC
T
J,
T
STG
Operating and Storage Temperature Range
-55 to +150
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
–
–
–
–
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
–
–
-1.0
±100
μ
A
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1.0
-1.8
-3.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -0.9A
V
GS
= -4.5V, I
D
= -0.8A
V
GS
= 0V, I
S
= -1A
257
343
350
550
Static Drain-Source On-Resistance
–
–
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-0.8
-1.2
–
–
–
–
–
–
–
–
–
–
–
–
–
–
206
15
–
–
–
–
–
–
–
–
–
–
–
–
–
–
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
11
Reverse Transfer Capacitance
Gate Resistance
17
V
DS
= 0V, V
GS
= 0V, f = 1MHz
2.0
4.1
0.5
0.8
3.6
3.8
12.3
7.3
8.2
2.7
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge
(V
GS
= -4.5V)
Total Gate Charge
(V
GS
= -10V)
Gate-Source Charge
Q
g
Q
g
V
DS
= -30V, I
D
= -0.9A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= -30V, V
GS
= -10V,
I
D
= -1.0A, R
g
= 6
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
RR
I
S
= -1.0A, di/dt = -100A/
μ
s
I
S
= -1.0A, di/dt = -100A/
μ
s
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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May 2016
© Diodes Incorporated
DMP6350S
Document number: DS38474 Rev. 3 – 2
DMP6350S
4.0
3.0
2.0
1.0
0.0
4
3.5
3
V
DS
= -5V
V
GS
= -10.0V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.5V
2.5
2
V
GS
= -3.0V
V
GS
= -2.5V
4
1.5
1
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= 125
o
C
T
A
= 150
o
C
0.5
0
T
A
= -55
o
C
0
1
2
3
5
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
1
0.8
0.6
0.4
0.2
0.5
0.45
0.4
V
GS
= -4.5V
0.35
0.3
I
D
= -900mA
V
GS
= -10V
0.25
0.2
0
1
2
3
4
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.6
0.5
0.4
0.3
0.2
0.1
2
1.8
1.6
1.4
1.2
1
V
GS
= -10V
150
℃
V
GS
= -10V, I
D
= -900mA
125
℃
85
℃
25
℃
V
GS
= -4.5V, I
D
= -800mA
0.8
0.6
-55
℃
0
1
2
3
4
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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© Diodes Incorporated
DMP6350S
Document number: DS38474 Rev. 3 – 2
DMP6350S
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2.2
2
I
D
= -1mA
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V, I
D
= -800mA
I
D
= -250
μ
A
V
GS
= -10V, I
D
= -900mA
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
4
3
2
1
0
1000
100
10
f=1MHz
V
GS
= 0V
C
iss
C
oss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 125
o
C
C
rss
T
J
= 150
o
C
T
J
= -55
o
C
1
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
1
10
8
R
DS(ON)
Limited
P
W
=100µs
6
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
P
W
=10s
0.1
4
V
DS
= -30V, I
D
= -0.9A
T
J(Max)
= 150
℃
T
C
= 25
℃
0.01
0.001
2
DC
Single Pulse
DUT on 1*MRP Board
V
GS
= -10V
0
0
1
2
3
4
5
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
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© Diodes Incorporated
DMP6350S
Document number: DS38474 Rev. 3 – 2
DMP6350S
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 173
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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May 2016
© Diodes Incorporated
DMP6350S
Document number: DS38474 Rev. 3 – 2
DMP6350S
Package Outline Dimensions
SOT23
All 7°
H
SOT23
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
2.05
3.00
GAUGE PLANE
Dim
A
B
C
D
F
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Typ
0.40
1.30
2.40
0.25
J
K
K1
a
M
A
1.83
2.90
0.05
L
L1
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Dimensions Value
(in mm)
Y
C
2.0
0.8
X
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
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© Diodes Incorporated
DMP6350S
Document number: DS38474 Rev. 3 – 2
DMP6350S
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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May 2016
© Diodes Incorporated
DMP6350S
Document number: DS38474 Rev. 3 – 2
