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DMPH4013SK3
Green
175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
I
D
T
C
= +25°C
-55A
BV
DSS
R
DS(ON) MAX
15m
@ V
GS
= -10V
23m
@ V
GS
= -4.5V
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green”
Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (
DMPH4013SK3Q
)
-40V
-50A
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: TO252 (DPAK)
Reverse Polarity Protection
Motor Control
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Power Management
Terminals: Finish
–
Matte Tin Finish Annealed over Copper
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
D
TO252 (DPAK)
D
G
G
S
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMPH4013SK3-13
TO252 (DPAK)
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturer’s Marking
PH4013S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 18 = 2018)
.
PH4013S
YYWW
WW = Week (01 to 53)
1 of 7
May 2018
© Diodes Incorporated
DMPH4013SK3
Document number: DS38685
Rev. 2 – 2
DMPH4013SK3
Maximum Ratings
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
T
C
= +100°C
Steady
State
-55
-40
A
Continuous Drain Current (Note 6) V
GS
= -10V
I
D
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 7)
-120
-3.6
-120
-40
A
A
I
DM
I
S
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.1mH
(Note 7)
69
mJ
Thermal Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
2.1
Unit
W
Total Power Dissipation (Note 5)
Steady state
Steady state
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
71
3.7
°C/W
W
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
41
R
JA
°C/W
°C
1.7
R
JC
Operating and Storage Temperature Range
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250
µ
A
V
DS
= -40V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
µA
nA
100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.0
-3.0
15
23
V
m
V
V
GS(TH)
R
DS(ON)
V
SD
10
V
DS
= V
GS
, I
D
= -250
µ
A
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -8A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
15
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-0.7
-1.2
4004
309
229
3.5
31
C
iss
C
oss
C
rss
R
g
—
—
—
—
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
67
Q
g
nC
V
DS
= -20V, I
D
= -10A
13.2
11
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
9.9
32
Turn-On Rise Time
V
GS
= -10V, V
DD
= -20V,
R
G
= 3
, I
D
= -10A
ns
Turn-Off Delay Time
46
t
D(OFF)
t
F
Turn-Off Fall Time
53
19.5
11.6
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= -10A, di/dt = -100A/µs
I
F
= -10A, di/dt = -100A/µs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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May 2018
© Diodes Incorporated
DMPH4013SK3
Document number: DS38685
Rev. 2 – 2
DMPH4013SK3
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
DS
= -5.0V
V
GS
= -10.0V
V
GS
= -4.0V
V
GS
= -3.5V
V
GS
= -5.0V
V
GS
= -4.5V
T
J
= 175
℃
T
J
= 150
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -3.0V
V
GS
= -2.5V
T
J
= 125
℃
T
J
= -55
℃
0
0.0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.4
0.8
1.2
1.6
2
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1.Typical Output Characteristic
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
V
GS
= -4.5V
I
D
= -10A
I
D
= -8.0A
V
GS
= -10V
0
5
10
15
20
0
5
10
15
20
25
30
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1
0.02
0.018
0.016
0.014
0.012
0.01
V
GS
= -10V
T
J
= 175
℃
V
GS
= -10V, I
D
= -10A
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -4.5V, I
D
= -8.0A
0.008
0.006
0.004
T
J
= -55
℃
0.8
0.6
-50 -25
0
25 50 75
100 125 150 175
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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May 2018
© Diodes Incorporated
DMPH4013SK3
Document number: DS38685
Rev. 2 – 2
DMPH4013SK3
0.03
0.025
0.02
0.015
0.01
0.005
0
2.5
2
V
GS
= -4.5V, I
D
= -8.0A
I
D
= -1mA
1.5
1
I
D
= -250
μ
A
V
GS
= -10V, I
D
= -10A
0.5
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
Figure 8. Gate Threshold Variation vs. Temperature
30
10000
1000
100
f=1MHz
V
GS
= 0V
C
iss
25
20
15
10
5
T
J
= 175
℃
T
J
= 150
℃
T
J
= 85
℃
T
J
= 25
℃
C
oss
C
rss
T
J
= -55
℃
T
J
= 125
℃
0
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
R
DS(ON)
LIMITED
9
8
7
6
5
4
3
2
1
0
P
W
=10
μ
s
P
W
=100
μ
s
P
W
=1ms
V
DS
= -20V, I
D
= -10A
T
J(MAX)
=175
℃
T
C
=25
℃
Single Pulse
DUT on infinite
heatsink
P
W
=10ms
P
W
=100ms
1
P
W
=1s
V
GS
= -10V
0.1
0.1
1
10
100
0
10
20
30
Qg (nC)
Figure 11. Gate Charge
40
50
60
70
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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May 2018
© Diodes Incorporated
DMPH4013SK3
Document number: DS38685
Rev. 2 – 2
DMPH4013SK3
1
D=0.9
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.7
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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May 2018
© Diodes Incorporated
DMPH4013SK3
Document number: DS38685
Rev. 2 – 2
DMPH4013SK3
Package Outline Dimensions
TO252 (DPAK)
E
A
b3
TO252 (DPAK)
Dim Min
Max Typ
7°± 1°
c
L3
A
A1
A2
b
b2
b3
c
2.19 2.39 2.29
0.00 0.13 0.08
0.97 1.17 1.07
0.64 0.88
0.783
0.76 1.14 0.95
5.21 5.46 5.33
0.45 0.58
0.531
6.00 6.20 6.10
D
A2
H
L4
D
D1
e
E
E1
H
L
L3
L4
a
5.21
–
–
–
–
2.286
e
6.45 6.70 6.58
4.32
9.40 10.41 9.91
1.40 1.78 1.59
0.88 1.27 1.08
0.64 1.02 0.83
b( 3x)
–
–
b2( 2x)
0.508
Gauge Plane
D1
Seating Plane
E1
0°
10°
–
All Dimensions in mm
L
A1
2.74REF
Suggested Pad Layout
TO252 (DPAK)
X1
Dimensions Value
(in mm)
C
X
X1
Y
Y1
Y2
Y1
4.572
1.060
5.632
2.600
5.700
10.700
Y2
C
Y
X
6 of 7
May 2018
© Diodes Incorporated
DMPH4013SK3
Document number: DS38685
Rev. 2 – 2
DMPH4013SK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Dio
d
e
s Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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May 2018
© Diodes Incorporated
DMPH4013SK3
Document number: DS38685
Rev. 2 – 2
