Diodes-Incorporated-DMPH4023SK3-13
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DMPH4023SK3
Green
40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Rated to +175°C
Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Low Input/Output Leakage
–
Ideal for High Ambient Temperature
I
D
max
T
C
= +25°C
BV
DSS
R
DS(ON)
max
26m
Ω
@ V
GS
= -10V
-40V
-50A
Description and Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.
“Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Motor Control
Backlighting
DC-DC Converters
Printer Equipment
Mechanical Data
Case: TO252 (DPAK)
Case Material: Molded Plastic, ―Green‖ Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
–
Matte Tin Finish Annealed over Copper
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
D
D
G
G
S
S
Top View
Pin Out
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMPH4023SK3-13
TO252 (DPAK)
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
= Manufacturer
’
s Marking
PH4023S = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
PH4023S
YYWW
1 of 7
September 2017
© Diodes Incorporated
DMPH4023SK3
Document number: DS38134
Rev. 1 – 2
DMPH4023SK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
T
C
= +100°C
-50
-35
A
Continuous Drain Current (Note 6) V
GS
= -10V
I
D
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 7)
-70
-4
A
A
I
DM
I
S
-70
A
I
SM
I
AS
E
AS
A
85
Avalanche Energy, L = 0.1mH (Note 7)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
R
Value
2.1
Unit
W
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Steady State
Steady State
71
3.6
°C/W
W
JA
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
41
R
JA
°C/W
°C
1.5
R
JC
Operating and Storage Temperature Range
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
—
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
—
—
—
21
-3
26
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -10A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
Diode Forward Voltage
-0.75
-1.2
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1091
288
111
14
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -20
V
,
V
GS
= 0
V
,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0
V
, f =
1
MHz
18.7
4.2
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
ns
nC
Q
g
V
DS
= -20
V
,
I
D
= -10A,
V
GS
= -10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q
gs
Q
gd
t
D(ON)
t
R
5.0
5.3
4.8
V
DD
= -20V, V
GS
= -10
V
,
30.7
23.4
17.8
9.2
t
D(OFF)
t
F
R
G
= 6
Ω
, I
D
= -10A
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= -10A, di/dt = -1
00A/μs
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
September 2017
© Diodes Incorporated
DMPH4023SK3
Document number: DS38134
Rev. 1 – 2
DMPH4023SK3
20.0
15.0
10.0
5.0
20
15
10
5
V
GS
= -5.0V
V
DS
= -10V
V
GS
= -10.0V
V
GS
= -4.5V
V
GS
= -4.0V
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
V
GS
= -3.5V
V
GS
= -3.0V
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
4
0
0.0
0
1
2
3
5
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
40.00
35.00
30.00
25.00
20.00
15.00
10.00
5.00
100
90
80
70
60
50
40
30
20
10
0
V
GS
= -10V
I
D
= -10A
0.00
0
5
10
15
20
25
30
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.05
0.04
0.03
0.02
0.01
0
2
1.8
1.6
1.4
1.2
1
V
GS
= -10V
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= -10V, I
D
= -10A
T
J
= -55
o
C
0.8
0.6
0.4
-50 -25
0
25 50 75
100 125 150 175
0
5
10
15
20
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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September 2017
© Diodes Incorporated
DMPH4023SK3
Document number: DS38134
Rev. 1 – 2
DMPH4023SK3
0.06
0.05
0.04
0.03
0.02
0.01
0
3.5
3
2.5
2
I
D
= -1mA
V
GS
= -10V, I
D
= -10A
I
D
= -250µA
1.5
1
0.5
0
-50 -25
0
25 50 75
100 125 150 175
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with
Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
15
10
5
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
C
oss
C
rss
T
J
= 25
o
C
T
J
= -55
o
C
10
0
0
5
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
100
P
W
10µs
=
R
DS(ON)
Limited
6
P
W
= 100µs
P
W
= 1ms
10
P
W
= 10ms
4
V
DS
= -20V, I
D
= -10A
P
W
= 100ms
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
2
DUT on Infinite Heatsink
V
GS
= -10V
P
W
= 1s
0
1
0
2
4
6
8
10 12 14 16 18 20
Q
g
(nC)
Figure 11. Gate Charge
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
September 2017
© Diodes Incorporated
DMPH4023SK3
Document number: DS38134
Rev. 1 – 2
DMPH4023SK3
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.5
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
September 2017
© Diodes Incorporated
DMPH4023SK3
Document number: DS38134
Rev. 1 – 2
DMPH4023SK3
Package Outline Dimensions
TO252 (DPAK)
E
A
b3
7°± 1°
c
L3
TO252 (DPAK)
Dim Min
Max Typ
2.19 2.39 2.29
A
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
D
A2
H
L4
b
0.64 0.88
0.783
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c
D
0.45 0.58
0.531
6.00 6.20 6.10
D1
5.21
–
–
–
e
b( 3x)
e
–
2.286
E
6.45 6.70 6.58
b2( 2x)
E1
4.32
–
–
0.508
H
L
9.40 10.41 9.91
1.40 1.78 1.59
Gauge Plane
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
D1
Seating Plane
E1
L
a
0°
10°
–
A1
All Dimensions in mm
2.74REF
Suggested Pad Layout
TO252 (DPAK)
X1
Dimensions Value
(in mm)
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y1
Y2
C
Y
X
6 of 7
September 2017
© Diodes Incorporated
DMPH4023SK3
Document number: DS38134
Rev. 1 – 2
DMPH4023SK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
7 of 7
September 2017
© Diodes Incorporated
DMPH4023SK3
Document number: DS38134
Rev. 1 – 2
Mouser Electronics
Authorized Distributor
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