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DMPH4029LFGQ
Green
40V 175°C
P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
•
Rated to +175°C—Ideal for High Ambient Temperature
Environments
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
-8.0A
•
100% Unclamped Inductive Switching Test in Production—
Ensures More Reliable and Robust End Application
Low R
DS(ON)
—Ensures On State Losses Are Minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
29m
Ω
@ V
GS
= -10V
45m
Ω
@ V
GS
= -4.5V
-40V
-6.0A
•
•
•
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
•
•
•
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
®
•
•
Case: PowerDI
3333-8
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish—Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
•
•
•
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
D
PowerDI3333-8
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information
(Note 5)
Part Number
Case
Packaging
DMPH4029LFGQ-7
DMPH4029LFGQ-13
2000/Tape & Reel
3000/Tape & Reel
PowerDI3333-8
PowerDI3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. Se
e https://www.diodes.com/quality/lead-free/ fo
r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds..
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to
https://www.diodes.com/quality/.
5. For
packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
H29= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
H29
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
March 2019
© Diodes Incorporated
DMPH4029LFGQ
Document number: DS41599 Rev. 2 – 2
DMPH4029LFGQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-40
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
-8.0
-6.7
A
A
I
D
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Continuous Drain Current (Note 7) V
GS
= -10V
Steady
State
-22
-18
I
D
I
DM
I
S
-88
-2.0
-88
-25
32
A
A
Pulsed Drain Current (380
µ
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Source Current (380
µ
s Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
A
I
SM
I
AS
E
AS
A
Avalanche Energy (Note 8) L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
1.2
125
85
2.8
W
P
D
R
ϴ
JA
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
t<10s
Steady State
t<10s
54
36
6
Thermal Resistance, Junction to Ambient (Note 7)
R
ϴ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
R
ϴ
JC
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.0
—
—
18
-3.0
29
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -3A
V
GS
= -4.5V, I
D
= -3A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
—
23
45
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
—
-0.7
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1626
135
107
11
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
17
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
34
Q
g
V
DS
= -20V, I
D
= -3A
3.7
6.0
3.9
2.8
83
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= -10V, V
DS
= -20V,
R
G
= 3
Ω
, I
D
= -3A
Turn-Off Delay Time
t
D(OFF)
t
F
30
Turn-Off Fall Time
Body Diode Reverse Recovery Time
17.3
7.2
I
F
= -3A, di/dt = 10
0A/μs
I
F
= -3A, di/dt = 10
0A/μs
t
RR
Body Diode Reverse Recovery Charge
Q
RR
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Short duration pulse test used to minimize self-heating effect.
10.Guaranteed by design. Not subject to product testing.
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March 2019
© Diodes Incorporated
DMPH4029LFGQ
Document number: DS41599 Rev. 2 – 2
DMPH4029LFGQ
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
GS
=-3.5V
V
DS
=-5.0V
V
GS
=-3.0V
V
GS
=-4.0V
V
GS
=-4.5V
V
GS
=-5.0V
V
GS
=-10V
V
GS
=-2.5V
V
GS
=-2.0V
85
℃
125
℃
150
℃
25
℃
-55
℃
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.04
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.03
0.02
0.01
0
V
GS
=-4.5V
V
GS
=-10V
I
D
=-3.0A
0
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
2.5
2
0.050
V
GS
=-4.5V
125
℃
150
℃
0.040
0.030
0.020
0.010
0.000
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-5A
85
℃
25
℃
1.5
1
-55
℃
0.5
0
-50 -25
0
25
50
75 100
125 150
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
3 of 7
March 2019
© Diodes Incorporated
DMPH4029LFGQ
Document number: DS41599 Rev. 2 – 2
DMPH4029LFGQ
1.8
1.6
1.4
1.2
1
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
=-1mA
V
GS
=-4.5V, I
D
=-5A
I
D
=-250
μ
A
V
GS
=-10V, I
D
=-10A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
-50 -25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
30
125
℃
150
℃
1000
100
10
25
20
15
10
5
85
℃
25
℃
V
GS
=0V, T
A
=125
℃
V
GS
=0V, T
A
=150
℃
V
GS
=0V,
T
A
=85
℃
1
V
GS
=0V,
T
A
=25
℃
0.1
0.01
V
GS
=0V, T
A
=-55
℃
0
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
Figure 9. Diode Forward Voltage vs. Current
10000
1000
100
10
8
f=1MHz
C
iss
6
C
oss
4
V
DS
=-20V, I
D
=-3A
C
rss
2
10
0
0
5
10
15
20
25
30
35
40
0
5
10
15
Q
g
(nC)
Figure 12. Gate Charge
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
4 of 7
March 2019
© Diodes Incorporated
DMPH4029LFGQ
Document number: DS41599 Rev. 2 – 2
DMPH4029LFGQ
100
10
1
R
DS(ON)
Limited
P
W
=1
μ
s
P
W
=10
μ
s
P
W
=100
μ
s
P
W
=1ms
P
W
=10ms
P
W
=100ms
DC
T
J(MAX)
=175
℃
T
C
=25
℃
Single Pulse
DUT on infinite
heatsink
V
GS
= -10V
0.1
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=125
℃
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
0.001
0.001
0.0001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
5 of 7
March 2019
© Diodes Incorporated
DMPH4029LFGQ
Document number: DS41599 Rev. 2 – 2
DMPH4029LFGQ
Package Outline Dimensions
PowerDI3333-8
A3
A1
A
PowerDI3333-8
Dim Min
Max Typ
0.75 0.85 0.80
A1
0.00 0.05 0.02
Seating Plane
A
D
A3
b
0.203
0.27 0.37 0.32
−
−
L( 4x)
E4
D2
b2
0.15 0.25 0.20
3.25 3.35 3.30
D2
2.22 2.32 2.27
3.25 3.35 3.30
1
D
Pin #1 ID
E
b2( 4x)
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
E4
1.60 1.70 1.65
E
E3
E2
e
L
0.65
0.35 0.45 0.40
−
−
L1
z
0.39
0.515
−
−
−
−
L1( 3x)
8
All Dimensions in mm
z( 4x)
b
e
Suggested Pad Layout
PowerDI3333-8
X3
X2
8
Y4
Dimensions Value
(in mm)
C
X
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X1
Y1
Y2
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
6 of 7
March 2019
© Diodes Incorporated
DMPH4029LFGQ
Document number: DS41599 Rev. 2 – 2
DMPH4029LFGQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
March 2019
© Diodes Incorporated
DMPH4029LFGQ
Document number: DS41599 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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