Diodes-Incorporated-DMPH6050SFG-13
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DMPH6050SFGQ
Green
60V P-CHANNEL +175°C MOSFET
PowerDI3333-8
Product Summary
Features and Benefits
Rated to +175°C
–
Ideal for High Ambient Temperature
Environments
I
D
Max
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
100% Unclamped Inductive Switching
–
Ensures More Reliable
and Robust End Application
Low R
DS(ON)
–
ensures on state losses are minimized
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
-18A
-15A
50m
Ω
@ V
GS
= -10V
70m
Ω
@ V
GS
= -4.5V
-60V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMPH6050SFGQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Mechanical Data
Backlighting
Power-management functions
DC-DC converters
®
Package: PowerDI
3333-8
Package Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.034 grams (Approximate)
PowerDI3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Packing
Part Number
Package
Qty.
2,000
3,000
Carrier
Tape & Reel
Tape & Reel
DMPH6050SFGQ-7
DMPH6050SFGQ-13
PowerDI3333-8
PowerDI3333-8
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more inf
ormation about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
PowerDI3333-8
PH5= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 23 = 2023)
WW = Week Code (01 to 53)
PH5
1 of 7
July 2023
DMPH6050SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39560 Rev. 2 – 2
DMPH6050SFGQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
-6.1
-4.2
A
A
Continuous Drain Current (Note 6) V
GS
= -10V
I
D
T
A
= +100°C
T
C
= +25°C
T
C
= +100°C
Steady
State
-18
-12
Continuous Drain Current (Note 7) V
GS
= -10V
I
D
I
DM
I
S
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
-32
-2
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10μs
Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
-32
A
I
SM
I
AS
E
AS
-24.8
30.8
A
Avalanche Energy (Note 8) L = 0.1mH
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
1.2
125
85
2.8
54
37
6
W
P
D
R
JA
P
D
Steady state
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
t<10s
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
R
JC
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1
—
—
—
—
41
-3
50
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -7A
V
GS
= -4.5V, I
D
= -7A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
52
70
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
-0.7
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
1293
86.3
64.7
12
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
11.9
24.1
3.6
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
Q
g
V
DS
= -30V, I
D
= -5A
Q
gs
Q
gd
t
D(ON)
t
R
5.7
Gate-Drain Charge
4.3
6.3
Turn-On Delay Time
Turn-On Rise Time
V
DS
= -30V, V
GS
= -10V,
R
G
= 3
Ω
, I
D
= -5A
46.7
25.3
13.6
7.4
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
t
RR
I
F
= -5A, di/dt = 10
0A/μs
Body Diode Reverse Recovery Charge
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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July 2023
DMPH6050SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39560 Rev. 2 – 2
DMPH6050SFGQ
30
25
20
15
10
5
30
V
= -10V
GS
V
= -4.5V
GS
V
= -4.0V
GS
V
= -5.0V
DS
25
20
V
= -5.0V
GS
15
10
T
= 175°C
A
V
= -3.5V
GS
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
5
0
T
= 25°C
V
= -3.0V
= -2.8V
A
GS
V
T
= -55°C
GS
A
0
0
1
1.5
2
2.5
3
3.5
4
4.5
5
1
2
3
4
5
V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
0.090
0.080
0.2
I
= -7A
0.18
D
0.16
0.14
0.12
I
D
= -5A
0.070
0.060
0.050
V
= -4.5V
= -10V
GS
0.1
0.08
0.06
V
GS
0.040
0.030
0.04
0.02
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.2
2
0.1
0.09
0.08
V
= -10V
GS
T
= 175°C
A
T
= 150°C
A
V
I
= -10V
GS
= -7A
1.8
1.6
1.4
D
T
= 125°C
A
0.07
0.06
0.05
0.04
T
= 85°C
A
V
I
= -4.5V
GS
= -7A
D
T
= 25°C
1.2
1
A
T
= -55°C
0.03
A
0.8
0.02
0.01
0.6
0.4
0
5
10
15
20
25
30
–
5
0
–
2
5
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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July 2023
DMPH6050SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39560 Rev. 2 – 2
DMPH6050SFGQ
0.11
0.1
2.6
2.4
V
I
= -10V
GS
= -7A
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
I
= -1mA
2.2
2
D
D
I
= -250µA
1.8
1.6
1.4
1.2
D
V
I
= -4.5V
GS
= -7A
D
1
-50 -25
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs.
Junction Temperature
–
5
0
–
2
5
0
25 50 75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
30
25
100000
T
= 175°C
V
GS
= 0V
A
10000
1000
100
T
= 150°C
= 125°C
A
T
= 175°C
A
T
T =
150°C
A
A
20
15
10
T
= 125°C
A
T
= 85°C
A
10
T
= 25°C
A
T = 85°C
A
1
5
0
T
= 25°C
A
0.1
T
= -55°C
A
0
5
10 15 20 25 30 35 40 45 50 55 60
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Drain-Source Leakage Current
vs. Voltage
10
8
10000
1000
f = 1MHz
V
I
= -30V
DS
= -5A
D
C
iss
6
4
2
0
C
oss
100
10
C
rss
0
4
8
12
16
20
24
28
20
25
30
35
0
5
10
15
40
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 12 Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
4 of 7
July 2023
DMPH6050SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39560 Rev. 2 – 2
DMPH6050SFGQ
100
10
R
DS(on)
Limited
P
= 100µs
W
DC
1
P
= 10s
P
W
= 1s
W
P
= 100ms
W
T
J(max)
= 175°C
T
A
= 25°C
0.1
P
= 10ms
W
V
GS
= -10V
Single Pulse
P
= 1ms
W
DUT on 1 * MRP Board
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
t
h
j
a
(t) = r(t) * R
t
h
ja
R
t
h
ja
= 125°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
5 of 7
July 2023
DMPH6050SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39560 Rev. 2 – 2
DMPH6050SFGQ
Package Outline Dimensions
PowerDI3333-8
ccc
C
PowerDI3333-8
Dim Min
Max Typ
A3
A1
A
S
e
a
t
ing
P
l
ane
A
0.75 0.85 0.80
8x-
A1
0.00 0.05 0.02
A3
b
b2
D
0.08 C
0.203
0.27 0.37 0.32
0.20
3.25 3.35 3.30
C
D2
2.22 2.32 2.27
3.25 3.35 3.30
E2
1.56 1.66 1.61
E3
0.79 0.89 0.84
D
D2
B
A
E
1
L( 4x)
e
L
0.65
0.35 0.45 0.40
P
i
n #1 ID
L1
z
0.39
0.515
b2( 4x)
E
aaa
bbb
ccc
0.25
0.10
0.10
E3
E2
All Dimensions in mm
L1( 3x)
2x-
aaa B
z( 4x)
b( 8x)
e
bbb
C A B
Suggested Pad Layout
PowerDI3333-8
Dimensions Value
(in mm)
X3
C
0.650
0.420
0.420
0.230
2.370
0.700
1.850
2.250
3.700
0.540
X2
X
8
Y4
X1
X2
X3
Y
X1
Y1
Y2
Y1
Y2
Y3
Y4
Y3
Y
1
X
C
6 of 7
July 2023
DMPH6050SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39560 Rev. 2 – 2
DMPH6050SFGQ
IMPORTANT NOTICE
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illust
rate the operation of Diodes’ products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technic
ally trained engineering customers and users who design with Diodes’
products. Diodes’ products may be used to facilitate safety
-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes pr
oducts for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications,
(c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements
as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes’
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa
le is
prohibited under any applicable laws and regulations. Should customers or users use Diodes’ pro
ducts in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
9. This Notice may be periodically updated with the most recent version available at
https://www.diodes.com/about/company/terms-and-
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.
7 of 7
July 2023
DMPH6050SFGQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS39560 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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