Diodes-Incorporated-DMPH6250S-13
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DMPH6250S
60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Rated to
+
175°C
–
Ideal for High Ambient Temperature
Environments
I
D
Max
BV
DSS
R
DS(ON)
Max
Low On-Resistance
T
A
=
+
25°C
Low Input Capacitance
Fast Switching Speed
155
mΩ @ V
GS
= -10V
240
mΩ @ V
GS
= -4.5V
-2.4A
-1.9A
Low Input/Output Leakage
-60V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony
Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Battery Charging
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
Power Management Functions
DC-DC Converters
Load Switch
D
S
D
G
S
G
Top View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMPH6250S-7
DMPH6250S-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about
Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
H62 = Product Type Marking Code
YM = Date Code Marking
Y= Year (ex: G = 2019)
H62
M = Month (ex: 9 = September)
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
Code
F
G
H
I
J
K
L
M
N
O
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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June 2019
© Diodes Incorporated
DMPH6250S
Document number: DS40561
Rev. 3 – 2
DMPH6250S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +100°C
-2.4
-1.5
A
Continuous Drain Current (Note 6) V
GS
= -10V
I
D
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
-13
-1.6
-13
-12
8
A
A
I
DM
I
S
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current , L = 0.1mH
A
I
SM
I
AS
E
AS
A
mJ
Avalanche Energy , L = 0.1mH
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
0.92
Unit
W
165
°C/W
W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Power Dissipation (Note 6)
R
θ
JA
1.62
P
D
93.1
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Operating and Storage Temperature Range
R
θ
JA
-55 to +175
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
-1.0
±100
μ
A
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
—
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-1.0
—
-1.9
112
149
-0.8
-3.0
155
240
-1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -2A
V
GS
= -4.5V, I
D
= -2A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
512
31.3
23.2
11.9
4.0
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
C
iss
C
oss
C
rss
R
g
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
8.3
Q
g
V
DS
= -30V, I
D
= -2A
1.2
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
1.7
Turn-On Delay Time
12.5
13.4
96.0
39.1
9.6
Turn-On Rise Time
V
DD
= -30V, V
GS
= -10V,
I
D
= -1.0A, R
G
= 50
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
t
RR
I
F
= -1A, di/dt = 1
00A/μs
I
F
= -1A, di/dt = 1
00A/μs
Body Diode Reverse Recovery Charge
nC
Q
RR
3.1
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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June 2019
© Diodes Incorporated
DMPH6250S
Document number: DS40561
Rev. 3 – 2
DMPH6250S
8
6
4
2
0
10.0
8.0
6.0
4.0
2.0
0.0
V
GS
=- 4.5V
V
GS
= -10V
V
DS
= -5.0V
V
GS
= -4.0V
V
GS
= -3.5V
V
GS
= -3.0V
T
J
= 125
℃
T
J
= 85
℃
T
J
= 175
℃
T
J
= 150
℃
T
J
= 25
℃
V
GS
= -2.5V
4
T
J
= -55
℃
0
1
2
3
5
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.6
1.4
1.2
1
V
GS
= -4.5V
0.8
0.6
0.4
0.2
0
V
GS
= -10V
I
D
= -2.0A
0
2
4
6
8
10 12 14 16 18 20
1
2
3
4
5
6
7
8
9
10
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.2
2
0.32
0.28
0.24
0.2
V
GS
= -10V
V
GS
= -10V, I
D
= -2.0A
T
J
= 175
℃
T
J
= 150
℃
1.8
1.6
1.4
1.2
1
T
J
= 125
℃
T
J
= 85
℃
0.16
0.12
0.08
0.04
0
V
GS
= -4.5V, I
D
= -2.0A
T
J
= 25
℃
T
J
= -55
℃
0.8
0.6
0.4
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25
50
75 100
125 150 175
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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June 2019
© Diodes Incorporated
DMPH6250S
Document number: DS40561
Rev. 3 – 2
DMPH6250S
2.4
2.2
2
0.35
0.3
I
D
= -1mA
0.25
0.2
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V, I
D
= -2.0A
I
D
= -250
μ
A
0.15
0.1
V
GS
= -10V, I
D
= -2.0A
0.05
0
0.8
-50 -25
0
25
50
75 100
125 150 175
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10
8
10000
1000
100
10
f = 1MHz
V
GS
= 0V
C
iss
6
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
C
oss
4
C
rss
2
T
J
= 25
o
C
T
J
= -55
o
C
1
0
0
10
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
20
30
40
50
60
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
R
DS(ON)
Limited
P
W
= 100µs
6
1
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
P
W
= 10s
4
0.1
V
DS
= -30V, I
D
= -2A
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
2
0.01
DC
DUT on 1*MRP Board
V
GS
= -10V
0
0.001
0
2
4
6
8
10
0.01
0.1
1
10
100
Q
g
(nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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June 2019
© Diodes Incorporated
DMPH6250S
Document number: DS40561
Rev. 3 – 2
DMPH6250S
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 163
℃
/W
Duty Cycle, D = t1/t2
D=Single Pulse
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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June 2019
© Diodes Incorporated
DMPH6250S
Document number: DS40561
Rev. 3 – 2
DMPH6250S
Package Outline Dimensions
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
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June 2019
© Diodes Incorporated
DMPH6250S
Document number: DS40561
Rev. 3 – 2
DMPH6250S
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
June 2019
© Diodes Incorporated
DMPH6250S
Document number: DS40561
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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