Diodes-Incorporated-DMPH6250SQ-7
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DMPH6250SQ
60V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Rated to +175°C
—
Ideal for High Ambient Temperature
Environments
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
=
+
25°C
Low On-Resistance
Low Input Capacitance
155
mΩ @ V
GS
= -10V
240
mΩ @ V
GS
= -4.5V
-2.4A
-1.9A
-60V
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP, and is ideal for use in:
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Battery Charging
e3
Solderable per MIL-STD-202, Method 208
Power Management Functions
DC-DC Converters
Load Switch
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
S
D
G
S
G
Top View
Top View
Internal Schematic
Ordering Information
(Note 5)
Part Number
DMPH6250SQ-7
DMPH6250SQ-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-free/ fo
r more information about Diodes
Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlori
ne (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to
https://www.diodes.com/quality/.
5. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
H62 = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: F = 2018)
M = Month (ex: 9 = September)
H62
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
Code
E
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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May 2018
© Diodes Incorporated
DMPH6250SQ
Document number: DS40279 Rev. 3 – 2
DMPH6250SQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-60
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +100°C
-2.4
-1.5
A
Continuous Drain Current (Note 7) V
GS
= -10V
I
D
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
-13
-1.6
-13
A
A
A
I
DM
I
S
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Body Diode Forward Current (380µs Pulse, Duty Cycle = 1%)
I
SM
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Symbol
P
D
Value
0.92
Unit
W
165
°C/W
W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6)
Power Dissipation (Note 7)
R
ϴ
JA
P
D
1.62
93.1
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 7)
Operating and Storage Temperature Range
R
ϴ
JA
T
J,
T
STG
-55 to +175
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-60
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
-1.0
±100
μ
A
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
—
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.0
—
-1.9
112
149
-0.8
-3.0
155
240
-1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -2A
V
GS
= -4.5V, I
D
= -2A
V
GS
= 0V, I
S
= -1A
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
512
31.3
23.2
11.9
4.0
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Q
g
8.3
Q
g
V
DS
= -30V, I
D
= -2A
1.2
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
1.7
Turn-On Delay Time
12.5
13.4
96.0
39.1
9.6
Turn-On Rise Time
V
DD
= -30V, V
GS
= -10V,
I
D
= -1.0A, R
G
= 50
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
t
RR
I
F
=
–
1A, di/dt = 100A/μs
I
F
=
–
1A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Q
RR
3.1
Notes:
6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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May 2018
© Diodes Incorporated
DMPH6250SQ
Document number: DS40279 Rev. 3 – 2
DMPH6250SQ
8
6
4
2
0
10.0
8.0
6.0
4.0
2.0
0.0
V
GS
=- 4.5V
V
GS
= -10V
V
DS
= -5.0V
V
GS
= -4.0V
V
GS
= -3.5V
V
GS
= -3.0V
T
J
= 125
℃
T
J
= 85
℃
T
J
= 175
℃
T
J
= 150
℃
T
J
= 25
℃
V
GS
= -2.5V
4
T
J
= -55
℃
0
1
2
3
5
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1.6
1.4
1.2
1
V
GS
= -4.5V
0.8
0.6
0.4
0.2
0
V
GS
= -10V
I
D
= -2.0A
0
2
4
6
8
10 12 14 16 18 20
1
2
3
4
5
6
7
8
9
10
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.2
2
0.32
0.28
0.24
0.2
V
GS
= -10V
V
GS
= -10V, I
D
= -2.0A
T
J
= 175
℃
T
J
= 150
℃
1.8
1.6
1.4
1.2
1
T
J
= 125
℃
T
J
= 85
℃
0.16
0.12
0.08
0.04
0
V
GS
= -4.5V, I
D
= -2.0A
T
J
= 25
℃
T
J
= -55
℃
0.8
0.6
0.4
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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May 2018
© Diodes Incorporated
DMPH6250SQ
Document number: DS40279 Rev. 3 – 2
DMPH6250SQ
2.4
2.2
2
0.35
0.3
I
D
= -1mA
0.25
0.2
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V, I
D
= -2.0A
I
D
= -250
μ
A
0.15
0.1
V
GS
= -10V, I
D
= -2.0A
0.05
0
0.8
-50 -25
0
25
50
75 100
125 150 175
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
50
75 100
125 150 175
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10
8
10000
1000
100
10
f = 1MHz
V
GS
= 0V
C
iss
6
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
C
oss
4
C
rss
2
T
J
= 25
o
C
T
J
= -55
o
C
1
0
0
10
20
30
40
50
60
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
R
DS(ON)
Limited
P
W
= 100µs
6
1
P
W
= 1ms
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
P
W
= 10s
4
0.1
V
DS
= -30V, I
D
= -2A
T
J(Max)
= 175
℃
T
C
= 25
℃
Single Pulse
2
0.01
0.001
DC
DUT on 1*MRP Board
V
GS
= -10V
0
0
2
4
6
8
10
0.01
0.1
1
10
100
Q
g
(nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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May 2018
© Diodes Incorporated
DMPH6250SQ
Document number: DS40279 Rev. 3 – 2
DMPH6250SQ
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 163
℃
/W
Duty Cycle, D = t1/t2
D=Single Pulse
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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May 2018
© Diodes Incorporated
DMPH6250SQ
Document number: DS40279 Rev. 3 – 2
DMPH6250SQ
Package Outline Dimensions
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
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May 2018
© Diodes Incorporated
DMPH6250SQ
Document number: DS40279 Rev. 3 – 2
DMPH6250SQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
May 2018
© Diodes Incorporated
DMPH6250SQ
Document number: DS40279 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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