Diodes-Incorporated-DMS2085LSD-13
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DMS2085LSD
P-CHANNEL ENHANCEMENT MODE MOSFET
WITH INTEGRATED SCHOTTKY DIODE
Product Summary
Features and Benefits
Low Input
Capacitance
MOSFET
R
DS(on) Max
MOSFET with Low
R
DS(ON)
–
Minimize Conduction Losses
Schottky Diode with Low Forward Voltage Drop
Fast Switching Speed
BV
DSS
I
D
-3.3A
-2.8A
85m
Ω
@ V
GS
= -10V
125m
Ω
@ V
GS
= -4.5V
SCHOTTKY DIODE
V
F Max
-20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
V
R
I
O
400mV @
I
F
= 0.5A
470mV @
I
F
= 1.0A
20V
1.0A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Applications
DC-DC Converters
Power Management Functions
Backlighting
Mechanical Data
Package: SO-8
Package
Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
A
D
A
K
A
S
K
D
D
G
G
K
S
Top View
Top View
D1 Schottky Diode
Q1 P-Channel MOSFET
Ordering Information
(Note 4)
Packing
Part Number
Package
SO-8
Qty.
2,500
Carrier
Tape & Reel
DMS2085LSD-13
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for mor
e information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm ch
lorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
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December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
DMS2085LSD
Marking Information
8
5
= Manufacturer’s Marking
S2085LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 21 = 2021)
WW = Week (01 to 53)
S2085LD
YY
WW
1
4
Maximum Ratings
–
P-CHANNEL MOSFET
–
Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
-20
Units
Drain-Source Voltage
Gate-Source Voltage
V
V
±20
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
-3.3
-2.7
A
A
I
D
I
D
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
-4.3
-3.4
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
-1.5
-11.2
-12
7
A
A
I
S
I
DM
I
AS
E
AS
A
Avalanche Energy
(Note 7) L = 0.1mH
mJ
Maximum Ratings
–
SCHOTTKY
–
D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
V
RRM
V
RWM
V
R
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
V
Average Rectified Output Current (Note 7, t<10s)
Peak Repetitive Forward Current (Note 7, t<10s)
1
2
A
A
I
O
I
FRM
Non-Repetitive Peak Forward Surge Current
(Note 7, t<10s)
Single Half Sine-Wave Superimposed on Rated Load
20
A
I
FSM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
1.1
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
JA
P
D
0.7
T
A
= +70°C
Steady State
t<10s
108
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
65
1.8
T
A
= +25°C
1.0
T
A
= +70°C
Steady State
t<10s
78
50
Thermal Resistance, Junction to Ambient (Note 6)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
22
R
θ
JC
-55 to +150
T
J,
T
STG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
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December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
DMS2085LSD
Electrical Characteristics P-Channel Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BV
DSS
I
DSS
-20
-1
V
V
GS
= 0V, I
D
= -250µA
µA
nA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
I
GSS
100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
V
SD
-0.5
-1.5
70
-2.2
85
V
m
Ω
V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -3.05A
V
GS
= -4.5V, I
D
= -1.50A
V
GS
= 0V, I
S
= -1.0A
Static Drain-Source On-Resistance
100
-0.8
125
-1.0
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
C
oss
C
rss
R
G
Q
g
353
49
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
41
6.2
3.7
7.8
1.1
1.3
3.3
3.0
14
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
(V
GS
= -4.5V)
Total Gate Charge
(V
GS
= -10V)
Gate-Source Charge
Q
g
nC
V
DS
= -15V, I
D
= -3A
Q
gs
Q
gd
t
D(on)
t
r
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= -15V,R
L
= 15
Ω
V
GS
= -10V, R
G
= 6
Ω
ns
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
6.8
33
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
rr
ns
I
S
= -3.05A, dI/dt = 100A/
μ
s
I
S
= -3.05A, dI/dt = 100A/
μ
s
Q
rr
46
nC
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
DMS2085LSD
15.0
12.0
9.0
10
9
8
7
6
5
4
3
2
1
0
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
GS
= -3.5V
V
DS
= -5.0V
V
GS
= -3.0V
6.0
V
GS
= -2.5V
V
GS
= -2.0V
3.0
T
A
= 85
℃
T
A
= 25
℃
T
A
= 150
℃
T
A
= 125
℃
V
GS
= -1.8V
T
T
A
= -55
℃
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.2
0.15
0.12
0.09
0.06
0.03
0
V
GS
= -4.5V
0.18
0.16
0.14
0.12
0.1
T
A
= 150
℃
T
A
= 125
℃
V
GS
= -4.5V
T
A
= 85
℃
0.08
0.06
0.04
0.02
0
T
A
= 25
℃
T
A
= -55
℃
V
GS
= -10V
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
12
15
I
D
, DRAIN SOURCE CURRENT (A)
Figure 4. Typical On-Resistance vs.
Drain Current
and Temperature
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.15
0.12
0.09
0.06
0.03
0
1.6
1.2
0.8
0.4
V
GS
= -4.5V,
I
D
= -5A
V
GS
= -4.5V, I
D
= -5A
V
GS
= -10V,
I
D
= -5A
V
GS
= -10V, I
D
= -5A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. On-Resistance Variation with Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
4 of 8
December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
DMS2085LSD
10
9
8
7
6
5
4
3
2
1
0
2
1.8
1.6
1.4
1.2
1
-I
D
= 1mA
-I
D
= 250
μ
A
T
A
= 150
o
C
0.8
0.6
0.4
0.2
0
T
A
=
125
o
C
T
A
=
85
o
C
T
A
=
25
o
C
T
A
= -5
5
o
C
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
T
A
, AMBIENT
TEMPERATURE (
℃
)
Figure 7. Gate Threshold Variation vs. Ambient Temperature
1000
10
8
C
iss
6
V
I
= -15V
DS
= -3A
100
D
4
C
oss
C
rss
2
f = 1MHz
10
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Gate-Charge Characteristics
Figure 9. Typical Junction Capacitance
100
10
R
DS(on)
Limited
DC
= 10s
1
0.1
P
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
T
= 150°C
J(max)
= 25°C
T
P
= 100µs
A
W
V
= 4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
5 of 8
December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
DMS2085LSD
Electrical Characteristics
–
SCHOTTKY
–
D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 10)
20
35
V
V
(BR)R
I
R
= 1mA
0.40
0.47
I
F
= 0.5A
I
F
= 1.0A
Forward Voltage (Note 10)
Reverse Current (Note 10)
V
V
F
I
R
30
80
μ
A
V
R
= 20V
Note:
10. Short duration pulse test used to minimize self-heating effect.
10
100000
10000
1000
T
= 150°C
A
T
= 125°C
A
1
T
= 150°C
A
T
= 85°C
A
T
= 125°C
A
T =
25°C
A
100
10
1
T
= -55°C
A
0.1
T =
85°C
A
T
= 25°C
A
T
= -55°C
A
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
2
4
6
8
10 12 14 16 18 20
V, , INSTANTANEOUS FORWARD VOLTAGE (V)
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 13. Typical Reverse Characteristics
F
Figure 12. Typical Forward Characteristics
6 of 8
December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
DMS2085LSD
Package Outline Dimensions
SO-8
SO-8
Dim Min
Max
1.50
0.20
0.50
0.25
4.95
6.10
3.90
3.95
—
Typ
E
A
A1
b
c
D
1.40
0.10
0.30
0.15
4.85
5.90
3.80
3.85
—
1.45
0.15
0.40
0.20
4.90
6.00
3.85
3.90
1.27
0.35
0.72
0.65
1
E
b
E1
E0
e
E1
h
)
s
e
d
Q
i
s
l
l
A
(
h
—
—
0.82
0.70
°
7°
9
c
L
Q
0.62
0.60
4°
±
3
°
A
All Dimensions in mm
Gauge Plane
S
e
a
t
ing
P
l
ane
L
A1
e
E0
D
Suggested Pad Layout
SO-8
X1
Dimensions Value
(in mm)
C
X
X1
Y
1.27
0.802
4.612
1.505
6.50
Y1
Y1
Y
C
X
7 of 8
December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
DMS2085LSD
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product
described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products.
Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting
the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring
their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-
safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques,
redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from
time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and
will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages
and liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications.
Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark
applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties
whose products and services may be described in this document or on Diodes’ website) under this document.
5.
Diodes
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products
purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final
and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized
use.
Copyright © 2021 Diodes Incorporated
8 of 8
December 2021
© Diodes Incorporated
DMS2085LSD
Document number: DS36926
Rev. 4 – 2
