Diodes-Incorporated-DMS2220LFDB-7
| Part # | Diodes-Incorporated-DMS2220LFDB-7 |
Download  | Diodes-Incorporated-DMS2220LFDB-7 |
DMS2220LFDB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR
SUPER BARRIER RECTIFIER
Features
Mechanical Data
Low On-Resistance
Case: U-DFN2020-6
95m
@V
GS
= -4.5V
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
120m
@V
GS
= -2.5V
86m
(Typ) @V
GS
= -1.8V
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable
e4
per MIL-STD-202, Method 208
Low Input/Output Leakage
®
Weight: 0.0065 grams (Approximate)
Incorporates Low V
F
Super Barrier Rectifier (SBR
)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part.
A listing can be found at
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
D
3
NC
2
A
1
U-DFN2020-6
(Type B)
NC
A
D
Q1
D1
K
D
S
4
5
6
K
G
S
G
K
Bottom View
Pin Configuration
Bottom View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMS2220LFDB-7
Case
Packaging
3000/Tape & Reel
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for mor
e information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500pp
m total Br + Cl) and
<1000ppm antimony compounds.
SBR is a registered trademark of Diodes Incorporated.
DMS2220LFDB
1 of 8
February 2020
© Diodes Incorporated
Document number: DS31546 Rev. 10 – 2
DMS2220LFDB
Marking Information
Site 1
ME = Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
ME
Date Code Key
Year
2008
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
V
…
H
I
J
K
L
M
N
O
P
R
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
Site 2
ME= Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2008
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
8
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
27-52
53
A-Z
a-z
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
2 of 8
February 2020
© Diodes Incorporated
DMS2220LFDB
Document number: DS31546 Rev. 10 – 2
DMS2220LFDB
Maximum Ratings
–
TOTAL DEVICE
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
1.4
Unit
W
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
89
°C/W
°C
R
θ
JA
-55 to +150
T
J
, T
STG
Maximum Ratings
–
P-CHANNEL MOSFET
–
Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
I
D
Value
-20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
±12
-3.5
-12
V
A
Pulsed Drain Current (Note 6)
A
I
DM
Maximum Ratings
–
SBR
–
D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
V
RRM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
V
V
RWM
V
R
RMS Reverse Voltage
14
1
V
A
V
R(RMS)
Average Rectified Output Current
I
O
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
3
A
I
FSM
Electrical Characteristics
–
P-CHANNEL MOSFET
–
Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
-20
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
GS
= ±12V, V
DS
= 0V
—
-1
µA
—
—
—
—
±100
±800
Gate-Source Leakage
nA
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.45
—
-1.3
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.8A
—
—
—
60
74
86
95
120
—
Static Drain-Source On-Resistance
m
Ω
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -1.8V, I
D
= -1.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
—
—
8
—
s
|Y
fs
|
V
SD
V
DS
= -5V, I
D
= -2.8A
V
GS
= 0V, I
S
= -1.6A
-0.7
-1.2
V
—
—
—
632
65
—
—
—
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
54
Electrical Characteristics
–
SBR
–
D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 7)
20
—
—
V
V
I
I
I
= 1mA
= 0.5A
= 1.0A
(BR)R
R
F
F
—
—
—
—
0.45
0.52
Forward Voltage
V
V
F
Reverse Current (Note 7)
—
—
100
µA
I
V =
20V
R
R
Notes:
5. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
3 of 8
February 2020
© Diodes Incorporated
DMS2220LFDB
Document number: DS31546 Rev. 10 – 2
DMS2220LFDB
Q1 – P-CHANNEL MOSFET
10
8
10
V
= -8.0V
V
= -5V
GS
DS
V
= -4.5V
GS
V
= -2.5V
8
6
4
GS
V
= -2.0V
GS
6
4
V
= -1.5V
GS
T
A
=
150°C
2
0
2
0
T
A
=
125°C
T =
85°C
A
T
A
= 25°C
V
= -1.2V
GS
V
= -1.0V
T =
-55°C
A
GS
0
1
2
3
4
5
0.5
1.0
1.5
2.0
-V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Fig. 1 Typical Output Characteristics
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.14
0.12
0.1
0.14
0.12
0.1
0.08
0.06
T =
150°C
A
T
A
= 125°C
0.08
0.06
0.04
V
V
= -1.8V
GS
T
A
= 85°C
= -2.5V
= -4.5V
GS
T
A
= 25°C
V
GS
0.04
0.02
0
T
A
= -55°C
0.02
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
-I
D
, DRAIN CURRENT (A)
-I
D
, DRAIN CURRENT (A)
Fig. 4
Typical Drain-Source On-Resistance
vs. Drain Current and
T
e
mperature
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.4
0.11
0.09
V
= -2.5V
= -2A
GS
I
D
V
= -2.5V
= -2A
1.2
1.0
GS
V
= -4.5V
GS
I
D
I
= -5A
D
0.07
V
= -4.5V
= -5A
GS
I
D
0.05
0.03
0.8
0.6
-50 -25
0
25
50
75 100
125 150
(°C)
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE
Fig. 5 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
(°C)
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 6 On-Resistance Variation with
T
e
mperature
4 of 8
February 2020
© Diodes Incorporated
DMS2220LFDB
Document number: DS31546 Rev. 10 – 2
DMS2220LFDB
10,000
1,000
1
f = 1MHz
0.9
0.8
0.7
C
iss
I
= -1mA
0.6
0.5
D
C
100
10
oss
I
D
=
-250
A
0.4
C
rss
0.3
0.2
-50 -25
T
A
, AMBIENT TEMPERATURE
Fig. 8 Gate Threshold Variation vs. Ambient
T
e
mperature
0
25
50
75 100
125 150
0
4
8
12
16
20
(°C)
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Capacitance
10
8
6
4
2
T
A
= 25°C
0
0
0.2 0.4 0.6 0.8
1
1.2
1.4 1.6
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
R
(t) = r(t) * R
JA
JA
R
=
146°C /W
JA
0.01
P(pk)
T
D = 0.01
t
1
t
2
D = 0.005
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 10 Transient Thermal Response
5 of 8
February 2020
© Diodes Incorporated
DMS2220LFDB
Document number: DS31546 Rev. 10 – 2
DMS2220LFDB
D1 – SBR
0.7
1
T
A
= 150°C
0.6
0.5
0.4
0.3
0.2
0.1
T
A
=
1
2
5
°C
0.1
T
A
= 85°C
0.01
0.001
T
A
= 25°C
T
A
= -55°C
0
0.0001
0
0.5
1
1.5
0
0.1 0.2 0.3 0.4 0.5
0.6 0.7 0.8
I
F(
A
V
)
, AVERAGE FORWARD CURRENT (A)
Fig. 11 Forward Power Dissipation
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 12 Typical Forward Characteristics
10,000
1,000
10,000
1,000
T =
150°C
A
T
A
= 125°C
f = 1MHz
100
10
1
T
A
= 85°C
100
T
A
= 25°C
10
1
0.1
0.01
0
5
10
15
20
25
30
35
40
0.1
1
10
V
R
, DC REVERSE VOLTAGE (V)
Fig. 14
T
o
tal Capacitance vs. Reverse Voltage
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 13 Typical Reverse Characteristics
1.6
1.4
1.2
1.0
150
125
Note 5
100
75
50
25
0
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
175
0
10
20
30
40
T ,
AMBIENT TEMPERATURE
(°C)
V
R
, DC REVERSE VOLTAGE (V)
A
Fig. 15 Forward Current Derating Curve
Fig. 16 Operating
T
e
mperature Derating
6 of 8
February 2020
© Diodes Incorporated
DMS2220LFDB
Document number: DS31546 Rev. 10 – 2
DMS2220LFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
Seating Plane
U-DFN2020-6
Type B
Dim
A
A1
A3
b
D
D2
e
Min
Max Typ
D
0.545 0.605 0.575
0.00 0.05 0.02
–
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
D2
D2
–
0.13
R
0
.150
–
–
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
E
E2
z1
–
–
0.45
k
L
0.25 0.35 0.30
z
z1
–
–
–
–
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y2
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X1(2x)
Y1(2x)
Y2
G
Y
G1
X
7 of 8
February 2020
© Diodes Incorporated
DMS2220LFDB
Document number: DS31546 Rev. 10 – 2
DMS2220LFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
February 2020
© Diodes Incorporated
DMS2220LFDB
Document number: DS31546 Rev. 10 – 2
