Diodes-Incorporated-DMT10H009LK3-13
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DMT10H009LK3
Green
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
100% Unclamped Inductive Switching (UIS) Test in Production
–
I
D
Max
T
C
= +25°C
BV
DSS
R
DS(ON)
Max
Ensures More Reliable and Robust End Application
Low R
DS(ON)
–
Minimizes Power Losses
90A
76A
9
mΩ @ V
GS
= 10V
13
mΩ @ V
GS
= 4.5V
Low Q
g
–
Minimizes Switching Losses
100V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
Case: TO252
Power Management Functions
DC-DC Converters
Backlighting
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 3 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO252 (DPAK)
Equivalent Circuit
Top View
Pin Out
Top View
Ordering Information
(Note 4)
Part Number
DMT10H009LK3-13
Case
TO252 (DPAK)
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products ar
e defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4
.
For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
= Manufacturer
’
s Marking
T109LK = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
T109LK
YYWW
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November 2019
© Diodes Incorporated
DMT10H009LK3
Document number: DS42130 Rev. 3 – 2
DMT10H009LK3
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
100
Unit
V
Gate-Source Voltage
±20
V
V
GSS
90
73
T
C
= +25°C
T
C
= +70°C
A
Continuous Drain Current, V
GS
= 10V
I
D
360
91
A
A
Pulsed Drain Current (10
s Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (10
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
I
DM
I
S
360
21
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 0.3mH
66.2
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.7
Unit
W
Total Power Dissipation (Note 5)
P
D
R
θ
JA
P
D
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
71
°C/W
W
3
40
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
R
θ
JA
R
θ
JC
T
J,
T
STG
°C/W
°C
1.1
Operating and Storage Temperature Range
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 80V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
µA
nA
—
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.2
—
—
—
—
2.5
9
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
µ
A
V
GS
= 10V, I
D
= 20A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 0V, I
S
= 20A
6.7
9.1
0.8
Static Drain-Source On-Resistance
13
1.3
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
2309
536
15.7
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
20
Q
g
V
DD
= 50V, I
D
= 20A,
V
GS
= 4.5V
Gate-Source Charge
Gate-Drain Charge
7.0
nC
Q
gs
Q
gd
t
D(ON)
t
R
8.5
Turn-On Delay Time
5.4
Turn-On Rise Time
10.6
28.3
14.9
44.3
65.5
V
DD
= 50V, V
GS
= 10V,
I
D
= 20A, R
g
= 3
Ω
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 20A, di/dt = 100A/µs
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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November 2019
© Diodes Incorporated
DMT10H009LK3
Document number: DS42130 Rev. 3 – 2
DMT10H009LK3
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
= 4.0V
V
GS
= 4.5V
V
DS
= 5V
V
GS
= 3.5V
T
J
=150
℃
V
GS
= 10.0V
T
J
=125
℃
T
J
=85
℃
V
GS
= 3.2V
T
J
=25
℃
V
GS
= 3.0V
V
GS
= 2.7V
T
J
=-55
℃
V
GS
= 2.5V
0.0
0
0
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.04
0.03
0.02
0.01
0
0.014
0.012
0.01
V
GS
= 4.5V
0.008
0.006
0.004
0.002
0
V
GS
= 10V
I
D
= 20A
0
5
10
15
20
25
30
0
4
8
12
16
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
2
1.8
1.6
1.4
1.2
1
0.016
0.014
0.012
0.01
V
GS
= 10V
T
J
=150
℃
V
GS
= 10V, I
D
= 20A
T
J
=125
℃
T
J
=85
℃
0.008
0.006
0.004
0.002
0
T
J
=25
℃
T
J
=-55
℃
V
GS
= 4.5V, I
D
= 5A
0.8
0.6
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
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November 2019
© Diodes Incorporated
DMT10H009LK3
Document number: DS42130 Rev. 3 – 2
DMT10H009LK3
0.02
0.015
0.01
0.005
0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
I
D
= 1mA
V
GS
= 4.5V, I
D
= 5A
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 20A
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
30
10000
1000
100
10
f=1MHz
C
iss
V
GS
= 0V
25
20
15
10
5
C
oss
T
J
= 85
℃
T
J
= 125
℃
T
J
= 25
℃
C
rss
T
J
= 150
℃
T
J
= -55
℃
0
0
1
0.3
0.6
0.9
1.2
1.5
0
20
40
60
80
100
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9.
Diode Forward Voltage vs. Current
1000
100
10
10
8
P
W
=1µs
R
DS(ON)
Limited
P
W
=10
s
P
W
=100
s
P
W
=1ms
6
1
4
V
DS
= 50V, I
D
= 20A
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on Infinite
Heatsink
P
W
=10ms
P
W
=100ms
0.1
0.01
2
DC
V
GS
= 10V
0
0
0.1
1
10
100
1000
5
10
15
20
Qg (nC)
Figure 11. Gate Charge
25
30
35
40
45
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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November 2019
© Diodes Incorporated
DMT10H009LK3
Document number: DS42130 Rev. 3 – 2
DMT10H009LK3
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
D=Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.1
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
November 2019
© Diodes Incorporated
DMT10H009LK3
Document number: DS42130 Rev. 3 – 2
DMT10H009LK3
Package Outline Dimensions
TO252 (DPAK)
E
A
b3
7°± 1°
c
L3
TO252 (DPAK)
Dim Min
Max Typ
2.19 2.39 2.29
A1
0.00 0.13 0.08
A2
0.97 1.17 1.07
A
D
A2
H
L4
b
0.64 0.88
0.783
b2
0.76 1.14 0.95
b3
5.21 5.46 5.33
c
D
0.45 0.58
0.531
6.00 6.20 6.10
e
D1
5.21
–
–
–
b(3x)
e
–
2.286
b2(2x)
E
6.45 6.70 6.58
0.508
E1
4.32
–
–
Gauge Plane
H
L
9.40 10.41 9.91
1.40 1.78 1.59
D1
Seating Plane
E1
L3
0.88 1.27 1.08
L4
0.64 1.02 0.83
a
L
A1
0°
10°
–
2.74REF
All Dimensions in mm
Suggested Pad Layout
TO252 (DPAK)
X1
Dimensions Value
(in mm)
Y1
C
X
X1
Y
Y1
Y2
4.572
1.060
5.632
2.600
5.700
10.700
Y2
C
Y
X
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November 2019
© Diodes Incorporated
DMT10H009LK3
Document number: DS42130 Rev. 3 – 2
DMT10H009LK3
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
November 2019
© Diodes Incorporated
DMT10H009LK3
Document number: DS42130 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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