Diodes-Incorporated-DMT10H052LFDF-13
| Part # | Diodes-Incorporated-DMT10H052LFDF-13 |
Download  | Diodes-Incorporated-DMT10H052LFDF-13 |
DMT10H052LFDF
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
I
D
max
T
A
= +25°C
5A
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
BV
DSS
R
DS(ON)
max
52m
Ω
@ V
GS
= 10V
75
mΩ @ V
GS
= 4.5V
Low On-Resistance
100V
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
please refer to the related automotive grade (Q-suffix) part. A
listing can be found at
4.1A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
This part is qualified to JEDEC standards (as references in
AEC-Q) for High Reliability.
Applications
Mechanical Data
Power Management Functions
Case: U-DFN2020-6
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6 (Type F)
G
Pin1
Gate Protection
S
Diode
Pin Out
Bottom View
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Quantity Per Reel
DMT10H052LFDF-7
DMT10H052LFDF-13
U-DFN2020-6
(Type F)
U-DFN2020-6
(Type F)
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of
Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
1 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
DMT10H052LFDF
Marking Information
U-DFN2020-6 (Type F)
57 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
57
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
9
0
1
2
3
4
5
6
7
8
9
0
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
100
±20
Unit
V
Gate-Source Voltage
V
V
GSS
T
A
= +25°C
T
A
= +70°C
5
4
A
Continuous Drain Current, V
GS
= 10V (Note 6)
I
D
30
2.3
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
A
A
I
DM
I
S
30
Pulsed Body Diode Continuous Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 7)
A
I
SM
I
AS
E
AS
15.6
12.2
A
Avalanche Energy, L = 0.1mH (Note 7)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
0.8
0.5
Unit
W
T
A
= +25°C
Total Power Dissipation (Note 5)
T
A
= +70°C
151
1.9
Thermal Resistance, Junction to Ambient (Note 5)
°C/W
W
R
JA
P
D
T
A
= +25°C
Total Power Dissipation (Note 6)
T
A
= +70°C
1.2
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
64
11
R
JA
R
JC
°C/W
°C
-55 to +150
T
J,
T
STG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
2 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
DMT10H052LFDF
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 1mA
V
DS
= 80V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
µA
—
±10
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.5
—
—
—
—
38
54
0.8
3.0
52
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
= 3A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
75
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
258
114
5.5
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 50V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
6.3
V
DS
= 0V, V
GS
= 0V, f = 1MHz
2.9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
5.4
Q
g
V
DS
= 50V, I
D
= 4A
0.8
Q
gs
Q
gd
t
D(ON)
t
R
1.6
Gate-Drain Charge
3.1
Turn-On Delay Time
3.8
Turn-On Rise Time
V
DS
= 50V, R
L
= 11
Ω
V
GS
= 10V, R
GEN
= 3
Ω
11.4
4.4
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
22.6
43.6
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 4A, di/dt = 30
0A/μs
Q
RR
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
3 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
DMT10H052LFDF
20.0
15.0
10.0
5.0
20
15
10
5
V
GS
= 5.0V
V
GS
= 10V
V
DS
= 5V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.5V
T
J
= 85
℃
T
J
= 150
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 3.0V
4
T
J
= 125
℃
0.0
0
0
1
2
3
5
1
2
3
4
5
6
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.3
0.25
0.2
I
D
= 4.0A
V
GS
= 4.5V
0.15
0.1
I
D
= 3.0A
V
GS
= 10V
0.05
0
0
5
10
15
20
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2.4
2.2
2
V
GS
= 10V
T
J
= 150
℃
V
GS
= 10V, I
D
= 4.0A
1.8
1.6
1.4
1.2
1
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 4.5V, I
D
= 3.0A
0.8
0.6
0.4
0
5
10
15
20
-50 -25
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
4 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
DMT10H052LFDF
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2.8
2.3
1.8
1.3
0.8
I
D
= 1mA
V
GS
= 4.5V, I
D
= 3.0A
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 4.0A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
15
10
5
1000
100
10
V
GS
= 0V
f = 1MHz
C
iss
C
oss
T
J
= 85
o
C
C
rss
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
1
0
0
10 20 30 40 50 60 70 80 90
100
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
9
8
7
6
5
4
3
2
1
0
100
10
R
DS(ON)
P
W
= 1ms
Limited
P
W
= 100µs
1
P
W
= 10ms
0.1
P
W
= 100ms
V
DS
= 50V, I
D
= 4A
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on
1*MRP Board
V
GS
= 10V
P
W
= 1s
P
W
= 10s
0.01
0.001
DC
0
1
2
3
4
5
6
0.1
1
10
100
1000
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
5 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
DMT10H052LFDF
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 151
℃
/W
Duty Cycle, D = t1 / t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
6 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
DMT10H052LFDF
Package Outline Dimension
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57
0.63
0.00 0.05
A3
A1
A
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
0.65 BSC
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
0.15 BSC
z2
D2
E
E2
k1
k1
k2
L
e2
L
k
0.36 BSC
0.225 0.325
0.275
0.20 BSC
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
z(4x)
All Dimensions in mm
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
7 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
DMT10H052LFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
July 2020
© Diodes Incorporated
DMT10H052LFDF
D
atasheet number: DS41699
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
