Diodes-Incorporated-DMT10H4M5LPS-13
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Green
DMT10H4M5LPS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
Max
T
C
= +25°C
(Note 9)
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
High Conversion Efficiency
BV
DSS
R
DS(ON)
Max
100V
100A
Low R
DS(ON)
–
Minimizes On-State Losses
Low Input Capacitance
4.3
mΩ @ V
GS
= 10V
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description
Mechanical Data
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize R
DS(ON)
yet maintain superior switching
®
Case: PowerDI
5060-8
,
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
performance. This device is ideal for use in notebook battery power
management and load switch.
Applications
Motor Control
DC-DC Converters
Power Management
PowerDI5060-8 (Standard)
D
S
S
D
D
D
D
Pin1
S
G
G
S
Top View
Pin Configuration
Top View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMT10H4M5LPS-13
Case
PowerDI5060-8 (Standard)
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
http://www.diodes.com/quality/lead_free/
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
thttps://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
D
D
D
D
=
Manufacturer’s Marking
10H4M5LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Last Two Digits of Year (ex: 19 = 2019)
WW or WW= Week Code (01 to 53)
10H4M5LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
1 of 7
May 2019
© Diodes Incorporated
DMT10H4M5LPS
Document number: DS41337
Rev. 3 – 2
DMT10H4M5LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
100
Unit
V
Gate-Source Voltage
±20
V
V
GSS
19
15
T
A
= +25°C
T
A
= +70°C
Steady
A
A
Continuous Drain Current, V
GS
= 10V (Note 5)
State
I
D
T
C
= +25°C
T
C
= +70°C
(Note 9)
100
100
Steady
Continuous Drain Current, V
GS
= 10V (Note 6)
State
I
D
400
100
400
40
A
A
Pulsed Drain Current (10µs Pulse,
T
C
=+25°C, Package Limited)
Maximum Continuous Body Diode Forward Current (Note 6)
I
DM
I
S
Pulsed Body Diode Forward Current (10µs Pulse,
T
C
=+25°C, Package Limited
)
Avalanche Current (Note 7) L=0.3mH
A
I
SM
I
AS
E
AS
A
240
Avalanche Energy (Note 7) L=0.3mH
mJ
Thermal Characteristics
Characteristic
Symbol
P
D
Value
2.3
54
Unit
W
Total Power Dissipation (Note 5)
T
A
= +25°C
T
C
= +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
θ
JA
113
P
D
1.1
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10mA
V
DS
= 80V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
µA
nA
—
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1.3
—
—
—
—
3.5
4.7
—
2.5
4.3
6.2
1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
A
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 20A
V
GS
= 0V, I
S
= 30A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
4843
1302
25.5
2.1
80
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
Q
g
V
DD
= 50V, I
D
= 30A,
V
GS
= 10V
14
Gate-Source Charge
Gate-Drain Charge
nC
Q
gs
Q
gd
t
D(ON)
t
R
18
9
Turn-On Delay Time
Turn-On Rise Time
26
V
DD
= 50V, V
GS
= 10V,
I
D
= 30A, R
g
= 4.7
Ω
, R
L
=1.1
Ω
ns
76
Turn-Off Delay Time
Turn-Off Fall Time
t
D(OFF)
t
F
50
63
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 22.5A, di/dt = 100A/µs
133
nC
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
May 2019
© Diodes Incorporated
DMT10H4M5LPS
Document number: DS41337
Rev. 3 – 2
DMT10H4M5LPS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
DS
= 5V
V
GS
= 3.2V
V
GS
=3.5V
V
GS
= 4.0V
-55
℃
25
℃
V
GS
= 4.5V
V
GS
= 3.0V
85
℃
V
GS
= 10.0V
125
℃
150
℃
V
GS
= 2.8V
V
GS
= 2.5V
0
0.0
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
5.00
4.50
4.00
3.50
3.00
2.50
2.00
20
16
12
8
V
GS
= 4.5V
V
GS
= 10V
I
D
=20A
4
0
0
5
10
15
20
25
30
2
4
6
8
10
12
14
16
18
20
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.2
2
9
V
GS
= 10V
8
7
6
5
4
3
2
1
0
V
GS
= 10V, I
D
= 30A
1.8
1.6
1.4
1.2
1
150
℃
125
℃
85
℃
25
℃
V
GS
= 4.5V, I
D
= 20A
0.8
0.6
0.4
-55
℃
0
5
10
15
20
25
30
-50 -25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
Figure 5.
Typical On-Resistance vs. Drain Current
and Temperature
3 of 7
May 2019
© Diodes Incorporated
DMT10H4M5LPS
Document number: DS41337
Rev. 3 – 2
DMT10H4M5LPS
2.6
2.4
2.2
2
10
9
8
7
6
5
4
3
2
1
0
I
D
= 1mA
V
GS
= 4.5V, I
D
= 20A
1.8
1.6
1.4
1.2
1
I
D
= 250
μ
A
V
GS
= 10V, I
D
= 30A
0.8
0.6
0.4
-50
-25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
100000
10000
1000
100
10
30
25
20
15
10
5
f=1MHz
V
GS
= 0V
C
iss
C
oss
T
A
= 85
℃
T
A
= 125
℃
T
A
= 25
℃
C
rss
1
T
A
= 150
℃
T
A
= -55
℃
0
0
0
20
40
60
80
100
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
1000
100
10
P
W
=1µs
R
DS(ON)
Limited
P
W
=10
s
6
P
W
=100
s
P
W
=1ms
P
W
=10ms
V
DS
= 50V, I
D
= 30A
4
P
W
=100ms
1
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
2
DUT on Infinite Heatsink
V
GS
= 10V
DC
0.1
0
0.1
1
10
100
1000
0
20
40
60
80
100
Qg (nC)
Figure 11. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
4 of 7
May 2019
© Diodes Incorporated
DMT10H4M5LPS
Document number: DS41337
Rev. 3 – 2
DMT10H4M5LPS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
D=Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.1
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
May 2019
© Diodes Incorporated
DMT10H4M5LPS
Document number: DS41337
Rev. 3 – 2
DMT10H4M5LPS
Package Outline Dimensions
PowerDI5060-8 (Standard)
D
b (
8x)
e/2
D1
PowerDI5060-8 (Standard)
1
b2 (
4x)
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.20
0.05
0.51
0.350
0.80
Typ
—
L
D3
D2
K
—
—
E1 E
b3 (
4x)
E3
E2
M
0.60
—
M1
0.354
5.15 BSC
5.30 BSC
5.40
4.25
4.70
6.15 BSC
6.06
3.92
4.39
1.27 BSC
0.71
1
D
(Option A)
D
(Option B)
G
L1
0( 4x)
A1
D1
D2
D3
E
E1
E2
E3
e
4.70
3.70
3.90
—
—
—
Detail A
c
A
5.60
3.28
3.99
—
—
—
Detail A
e
01 (
4x)
1
1
G
0.40
0.51
0.38
0.100
3.235
1.00
8º
—
—
—
—
K
1.45
L
0.71
L1
M
M1
θ
0.200
4.035
1.40
1.21
—
12º
θ1
6º
8º
7º
1
1
All Dimensions in mm
Option A
( Top
View)
Option B
( Top
View)
Option A
Option B
( Bottom
View) (
Bottom View)
Suggested Pad Layout
PowerDI5060-8 (Standard)
X4
X3
Dimensions
Value (in mm)
Y2
C
G
G1
X
1.270
0.660
0.820
0.610
4.300
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
4.100
0.180
6.610
Y3
Y1
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
6 of 7
May 2019
© Diodes Incorporated
DMT10H4M5LPS
Document number: DS41337
Rev. 3 – 2
DMT10H4M5LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
May 2019
© Diodes Incorporated
DMT10H4M5LPS
Document number: DS41337
Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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