Diodes-Incorporated-DMT12H007LPS-13
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DMT12H007LPS
Green
120V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary
Features
100% Unclamped Inductive Switching (UIS) Test in Production
–
Ensures More Reliable and Robust End Application
Thermally Efficient Package
–
Cooler Running Applications
High Conversion Efficiency
I
D
BV
DSS
R
DS(ON)
Max
T
C
= +25°C
90A
70A
7.8m
Ω
@ V
GS
= 10V
14.1m
Ω
@ V
GS
= 4.5V
120V
Low R
DS(ON)
–
Minimizes On-State Losses
<1.1mm Package Profile
–
Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
®
Case: PowerDI
5060-8
Switching
DC-DC Converters
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
S
D
D
D
D
Pin1
S
G
Top View
Pin Configuration
Internal Schematic
Bottom View
Top View
Ordering Information
(Note 4)
Part Number
DMT12H007LPS-13
Case
PowerDI5060-8
Packaging
2,500 / Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
D
D
D
D
=Manufacturer
’
s Marking
T12H007LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 19 = 2019)
WW = Week Code (01 to 53)
T12H007LS
YY WW
S
S
S
G
PowerDI is a registered trademark of Diodes Incorporated.
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October 2019
© Diodes Incorporated
DMT12H007LPS
Document number: DS41426 Rev. 3 – 2
DMT12H007LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
120
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
C
= +25°C
T
C
= +70°C
90
72
A
Continuous Drain Current, V
GS
= 10V (Note 6)
I
D
360
80
Pulsed Drain Current (10
μ
s Pulse, Duty Cycle = 1%)
Continuous Body Diode Forward Current (Note 6)
Pulsed Body Diode Forward Current (Note 6)
Avalanche Current, L = 3mH
A
A
I
DM
I
S
T
C
= +25°C
T
C
= +25°C
360
15.6
365
A
I
SM
I
AS
E
AS
A
Avalanche Energy, L = 3mH
mJ
Thermal Characteristics
Value
Typ
Characteristic
Symbol
Unit
Total Power Dissipation (Note 5)
2.9
W
°C/W
W
P
D
R
θ
JA
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
42
96
P
D
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
1.3
°C/W
°C
R
θ
JC
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
120
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10mA
V
DS
= 96V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
—
±100
I
GSS
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
1.3
—
—
—
—
6
2.5
7.8
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 30A
V
GS
= 4.5V, I
D
= 15A
V
GS
= 0V, I
S
= 30A
Static Drain-Source On-Resistance
10
0.8
14.1
1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3224
454
17.8
1.9
C
iss
C
oss
C
rss
R
G
V
DS
= 60V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 60V, I
D
= 25A
49
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
11.6
11.4
7.9
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
15.4
30
Turn-On Rise Time
V
DD
= 60V, V
GS
= 10V,
I
D
= 25A, R
G
= 2.7
Ω
ns
Turn-Off Delay Time
t
D(OFF)
t
F
19.1
54
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 25A, di/dt = 10
0A/μs
100
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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October 2019
© Diodes Incorporated
DMT12H007LPS
Document number: DS41426 Rev. 3 – 2
DMT12H007LPS
30
25
20
15
10
5
50.0
40.0
30.0
20.0
10.0
0.0
V
DS
= 5.0V
V
GS
=10V
V
GS
= 5.0V
V
GS
= 4.5V
V
GS
= 4.0V
T
J
=125
℃
V
GS
=3.7V
T
J
=150
℃
T
J
=85
℃
T
J
=25
℃
V
GS
= 3.5V
V
GS
= 3.1V
T
J
= -55
℃
0
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
50
40
30
20
10
0
15.0
12.0
9.0
V
GS
= 4.5V
I
D
= 30A
I
D
= 15A
6.0
V
GS
= 10V
3.0
0.0
2
4
6
8
10 12 14 16 18 20
0
5
10 15 20 25 30 35 40 45 50
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.4
2.2
2
16.0
14.0
12.0
10.0
8.0
V
GS
= 10V
T
J
=150
℃
1.8
1.6
1.4
1.2
1
V
GS
= 10V, I
D
= 30A
T
J
=125
℃
T
J
=85
℃
T
J
=25
℃
6.0
V
GS
= 4.5V, I
D
= 15A
T
J
= -55
℃
4.0
0.8
0.6
0.4
2.0
0.0
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
50
75
100 125 150
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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October 2019
© Diodes Incorporated
DMT12H007LPS
Document number: DS41426 Rev. 3 – 2
DMT12H007LPS
3
2.5
2
20
18
16
14
12
10
8
I
D
= 1mA
V
GS
= 4.5V, I
D
= 15A
I
D
= 250
μ
A
1.5
1
6
V
GS
= 10V, I
D
= 30A
4
0.5
0
2
0
-50 -25
0
25
50
75
100 125 150
-50
-25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
30
25
20
15
10
5
f=1MHz
C
iss
V
GS
= 0V
1000
100
10
C
oss
T
J
=85
℃
C
rss
T
J
=150
℃
T
J
=25
℃
T
J
=125
℃
T
J
= -55
℃
1
0
0
10 20 30 40 50 60 70 80 90
100 110 120
0
0.3
0.6
0.9
1.2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
1000
100
10
10
R
DS(ON)
Limited
P
W
=1µs
9
8
7
6
5
4
3
2
1
0
P
W
=10µs
V
DS
= 60V, I
D
= 25A
P
W
=100µs
P
W
=1ms
1
T
J(Max)
= 150
℃
P
W
=10ms
T
C
= 25
℃
P
W
=100ms
Single Pulse
DUT on Infinite
Heatsink
0.1
0.01
DC
V
GS
= 10V
0
5
10 15 20 25 30 35 40 45 50
Q
g
(nC)
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
October 2019
© Diodes Incorporated
DMT12H007LPS
Document number: DS41426 Rev. 3 – 2
DMT12H007LPS
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
D=Single Pulse
R
θ
JC
(t) = r(t) * R
θ
JC
R
θ
JC
= 1.3
℃
/W
Duty Cycle, D = t1 / t2
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
October 2019
© Diodes Incorporated
DMT12H007LPS
Document number: DS41426 Rev. 3 – 2
DMT12H007LPS
Package Outline Dimensions
PowerDI5060-8
PowerDI5060-8
Dim
A
A1
b
b2
b3
c
Min
0.90
0.00
0.33
0.200
0.40
0.230
Max
1.10
0.05
0.51
0.350 0.273
0.80 0.60
0.330 0.277
5.15 BSC
5.10
4.10
4.30
6.15 BSC
6.00
3.68
4.39
1.27 BSC
0.71
0.71
0.200 0.175
4.035 3.635
1.40
12°
8°
Typ
1.00
D
D1
Detail A
c
0( 4X)
A1
0.41
E1 E
D
e
D1
D2
D3
E
E1
E2
E3
e
G
K
L
L1
M
4.70
3.70
3.90
4.90
3.90
4.10
01 (
4X)
1
5.60
3.28
3.99
5.80
3.48
4.19
b (
8X)
L
e/2
1
b2 (
4X)
D3
K
0.51
0.51
0.51
0.100
3.235
1.00
10°
0.61
0.61
A
D2
b3 (
4X)
E3
E2
M
M1
M1
Θ
Θ1
1.21
11°
7°
Detail A
G
L1
6°
All Dimensions in mm
Suggested Pad Layout
PowerDI5060-8
X4
X3
Y2
Y1
Dimensions
Value (in mm)
1.270
0.660
0.820
0.610
4.100
0.755
4.420
5.610
1.270
0.600
1.020
0.295
1.825
3.810
0.180
6.610
C
G
G1
X
Y3
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y4
Y5
Y6
Y7
X2
Y5
Y4
X1
Y7
G1
C
Y6
Y( 4x)
X
G
6 of 7
October 2019
© Diodes Incorporated
DMT12H007LPS
Document number: DS41426 Rev. 3 – 2
DMT12H007LPS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
7 of 7
October 2019
© Diodes Incorporated
DMT12H007LPS
Document number: DS41426 Rev. 3 – 2
Mouser Electronics
Authorized Distributor
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